Transistors - FETs, MOSFETs - Arrays - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	ProductStatus	FETType	FETFeature	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	InputCapacitance(Ciss)(Max)@Vds	Power-Max	OperatingTemperature	MountingType
GMM3X60-015X2-SMDSAM MOSFET 6N-CH 150V 50A 24-SMD IXYS	2868	0.00	- + Добавить Немедленный	Datenblatt	Tube	-	Active	6 N-Channel (3-Phase Bridge)	Standard	150V	50A	24mOhm @ 38A, 10V	4.5V @ 1mA	97nC @ 10V	5800pF @ 25V	-	-55°C ~ 175°C (TJ)	Surface Mount
GWM180-004X2-SL MOSFET 6N-CH 40V 180A 17-SMD IXYS	2819	0.00	- + Добавить Немедленный	Datenblatt	Tube	-	Active	6 N-Channel (3-Phase Bridge)	Standard	40V	180A	2.5mOhm @ 100A, 10V	4.5V @ 1mA	110nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount
GWM180-004X2-SLSAM MOSFET 6N-CH 40V 180A 17-SMD IXYS	3492	0.00	- + Добавить Немедленный		Tube	-	Active	6 N-Channel (3-Phase Bridge)	Standard	40V	180A	2.5mOhm @ 100A, 10V	4.5V @ 1mA	110nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount
GWM180-004X2-SMD MOSFET 6N-CH 40V 180A 17-SMD IXYS	3002	0.00	- + Добавить Немедленный	Datenblatt	Tube	-	Active	6 N-Channel (3-Phase Bridge)	Standard	40V	180A	2.5mOhm @ 100A, 10V	4.5V @ 1mA	110nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount
GWM180-004X2-SMDSAM MOSFET 6N-CH 40V 180A 17-SMD IXYS	2534	0.00	- + Добавить Немедленный		Tube	-	Active	6 N-Channel (3-Phase Bridge)	Standard	40V	180A	2.5mOhm @ 100A, 10V	4.5V @ 1mA	110nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount
VWM270-0075X2 MOSFET 6N-CH 75V 270A V2-PAK IXYS	3664	0.00	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	6 N-Channel (3-Phase Bridge)	Standard	75V	270A	2.1mOhm @ 100A, 10V	4V @ 500µA	360nC @ 10V	-	-	-40°C ~ 175°C (TJ)	Chassis Mount
SIA914ADJ-T1-GE3 MOSFET 2N-CH 20V 4.5A SC70-6L Vishay Siliconix	2720	0.00	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	TrenchFET®	Obsolete	2 N-Channel (Dual)	Logic Level Gate	20V	4.5A	43mOhm @ 3.7A, 4.5V	900mV @ 250µA	12.5nC @ 8V	470pF @ 10V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount
IRF6802SDTR1PBF MOSFET 2N-CH 25V 16A SA Infineon Technologies	2607	0.00	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	HEXFET®	Obsolete	2 N-Channel (Dual)	Logic Level Gate	25V	16A	4.2mOhm @ 16A, 10V	2.1V @ 35µA	13nC @ 4.5V	1350pF @ 13V	1.7W	-40°C ~ 150°C (TJ)	Surface Mount
IRF9395MTR1PBF MOSFET 2P-CH 30V 14A DIRECTFET Infineon Technologies	2876	0.00	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	HEXFET®	Obsolete	2 P-Channel (Dual)	Logic Level Gate	30V	14A	7mOhm @ 14A, 10V	2.4V @ 50µA	64nC @ 10V	3241pF @ 15V	2.1W	-40°C ~ 150°C (TJ)	Surface Mount
MTM763250LBF MOSFET N/P-CH 20V 1.7A/1A 6-SMD Panasonic Electronic Components	2557	0.00	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	-	Obsolete	N and P-Channel	Logic Level Gate	20V	1.7A, 1A	120mOhm @ 1A, 4V	1.3V @ 1mA	-	280pF @ 10V	700mW	150°C (TJ)	Surface Mount
PMDPB28UN,115 MOSFET 2N-CH 20V 4.6A HUSON6 NXP USA Inc.	2247	0.21	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT),Bulk	-	Obsolete	2 N-Channel (Dual)	Logic Level Gate	20V	4.6A	37mOhm @ 4.6A, 4.5V	1V @ 250µA	4.7nC @ 4.5V	265pF @ 10V	510mW	-55°C ~ 150°C (TJ)	Surface Mount
PMDPB38UNE,115 MOSFET 2N-CH 20V 4A HUSON6 NXP USA Inc.	2296	0.08	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT),Bulk	-	Obsolete	2 N-Channel (Dual)	Logic Level Gate	20V	4A	46mOhm @ 3A, 4.5V	1V @ 250µA	4.4nC @ 4.5V	268pF @ 10V	510mW	-55°C ~ 150°C (TJ)	Surface Mount
PMDPB42UN,115 MOSFET 2N-CH 20V 3.9A HUSON6 NXP USA Inc.	2737	0.21	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT),Bulk	-	Obsolete	2 N-Channel (Dual)	Logic Level Gate	20V	3.9A	50mOhm @ 3.9A, 4.5V	1V @ 250µA	3.5nC @ 4.5V	185pF @ 10V	510mW	-55°C ~ 150°C (TJ)	Surface Mount
PMDPB56XN,115 MOSFET 2N-CH 30V 3.1A HUSON6 NXP USA Inc.	2797	0.21	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT),Bulk	-	Obsolete	2 N-Channel (Dual)	Logic Level Gate	30V	3.1A	73mOhm @ 3.1A, 4.5V	1.5V @ 250µA	2.9nC @ 4.5V	170pF @ 15V	510mW	-55°C ~ 150°C (TJ)	Surface Mount
PMDPB70EN,115 MOSFET 2N-CH 30V 3.5A 6DFN Nexperia USA Inc.	2158	0.00	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Obsolete	2 N-Channel (Dual)	Logic Level Gate	30V	3.5A	57mOhm @ 3.5A, 10V	2.5V @ 250µA	4.5nC @ 10V	130pF @ 15V	510mW	-55°C ~ 150°C (TJ)	Surface Mount
PMDPB95XNE,115 MOSFET 2N-CH 30V 2.4A HUSON6 NXP USA Inc.	3774	0.06	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT),Bulk	-	Obsolete	2 N-Channel (Dual)	Logic Level Gate	30V	2.4A	120mOhm @ 2A, 4.5V	1.5V @ 250µA	2.5nC @ 4.5V	143pF @ 15V	475mW	-55°C ~ 150°C (TJ)	Surface Mount
PMGD130UN,115 MOSFET 2N-CH 20V 1.2A 6TSSOP NXP USA Inc.	3121	1.00	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT),Bulk	-	Obsolete	2 N-Channel (Dual)	Logic Level Gate	20V	1.2A	145mOhm @ 1.2A, 4.5V	1V @ 250µA	1.3nC @ 4.5V	83pF @ 10V	390mW	-55°C ~ 150°C (TJ)	Surface Mount
PMGD175XN,115 MOSFET 2N-CH 30V 0.9A 6TSSOP NXP USA Inc.	3128	1.00	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT),Bulk	-	Obsolete	2 N-Channel (Dual)	Logic Level Gate	30V	900mA	225mOhm @ 1A, 4.5V	1.5V @ 250µA	1.1nC @ 4.5V	75pF @ 15V	390mW	-55°C ~ 150°C (TJ)	Surface Mount
APTMC60TL11CT3AG MOSFET 4N-CH 1200V 28A SP3 Microchip Technology	2279	0.00	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	4 N-Channel (Three Level Inverter)	Silicon Carbide (SiC)	1200V (1.2kV)	28A (Tc)	98mOhm @ 20A, 20V	2.2V @ 1mA	49nC @ 20V	950pF @ 1000V	125W	-40°C ~ 150°C (TJ)	Chassis Mount
FDMS3606AS MOSFET 2N-CH 30V 13A/27A POWER56 onsemi	2010	0.00	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)	PowerTrench®	Active	2 N-Channel (Dual) Asymmetrical	Logic Level Gate	30V	13A, 27A	8mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1695pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount