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| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APTC60VDAM24T3GMOSFET 2N-CH 600V 95A SP3 |
2182 | 130.93 |
ДобавитьНемедленный |
Datenblatt |
Tray | CoolMOS™ | Active | 2 N-Channel (Dual) | Super Junction | 600V | 95A | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
APTC60BBM24T3GMOSFET 2N-CH 600V 95A SP3F |
2943 | 133.57 |
ДобавитьНемедленный |
Datenblatt |
Bulk | CoolMOS™ | Active | 2 N-Channel (Half Bridge) | Standard | 600V | 95A | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | 462W | -40°C ~ 150°C (TJ) | - |
|
|
NXH010P120MNF1PGPIM F1 SIC HALFBRIDGE 1200V 10MO |
2167 | 135.97 |
ДобавитьНемедленный |
Datenblatt |
Tray | - | Active | 2 N-Channel (Dual) Common Source | Silicon Carbide (SiC) | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
MCB30P1200LB-TRRMCB30P1200LB-TRR |
2006 | 138.61 |
ДобавитьНемедленный |
Tape & Reel (TR) | MCB30P1200LB | Active | 4 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | - | - | - | - | - | - | - | Surface Mount | |
|
DF11MR12W1M1PB11BPSA1MOSFET MODULE 1200V |
3528 | 142.92 |
ДобавитьНемедленный |
Datenblatt |
Tray | EasyPACK™ | Last Time Buy | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A (Tj) | 22.5mOhm @ 50A, 15V | 5.55V @ 20mA | 124nC @ 15V | 3680pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
MCB30P1200LB-TUBMCB30P1200LB-TUB |
3624 | 143.00 |
ДобавитьНемедленный |
Tube | MCB30P1200LB | Active | 4 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | - | - | - | - | - | - | - | Surface Mount | |
|
|
NXH020F120MNF1PGPIM F1 SIC FULL BRIDGE 1200V 20M |
3537 | 143.05 |
ДобавитьНемедленный |
Datenblatt |
Tray | - | Active | 4 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | 2420pF @ 800V | 119W (Tj) | -40°C ~ 175°C (TJ) | Chassis Mount |
|
|
APTC80A15SCTGMOSFET 2N-CH 800V 28A SP4 |
2812 | 143.28 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Standard | 800V | 28A | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | 277W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
IXFN130N90SKSICARBIDE-DISCRETE MOSFET SOT-22 |
3451 | 145.83 |
ДобавитьНемедленный |
Tube | - | Active | 2 N-Channel (Dual) | Standard | 900V | - | - | - | - | - | - | - | Chassis Mount | |
|
APTC60HM35T3GMOSFET 4N-CH 600V 72A SP3 |
2817 | 145.84 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 4 N-Channel (Half Bridge) | Standard | 600V | 72A | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | 14000pF @ 25V | 416W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
APTC80H29SCTGMOSFET 4N-CH 800V 15A SP4 |
3735 | 147.51 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 4 N-Channel (Half Bridge) | Standard | 800V | 15A | 290mOhm @ 7.5A, 10V | 3.9V @ 1mA | 91nC @ 10V | 2254pF @ 25V | 156W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
APTM20AM10FTGMOSFET 2N-CH 200V 175A SP4 |
2220 | 149.02 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Standard | 200V | 175A | 12mOhm @ 87.5A, 10V | 5V @ 5mA | 224nC @ 10V | 13700pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
APTM20HM20FTGMOSFET 4N-CH 200V 89A SP4 |
3897 | 150.52 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 4 N-Channel (Half Bridge) | Standard | 200V | 89A | 24mOhm @ 44.5A, 10V | 5V @ 2.5mA | 112nC @ 10V | 6850pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
APTM10HM09FT3GMOSFET 4N-CH 100V 139A SP3 |
2824 | 151.76 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 4 N-Channel (Half Bridge) | Standard | 100V | 139A | 10mOhm @ 69.5A, 10V | 4V @ 2.5mA | 350nC @ 10V | 9875pF @ 25V | 390W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
APTM08TAM04PGMOSFET 6N-CH 75V 120A SP6-P |
2431 | 153.78 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 6 N-Channel (3-Phase Bridge) | Standard | 75V | 120A | 4.5mOhm @ 60A, 10V | 4V @ 1mA | 153nC @ 10V | 4530pF @ 25V | 138W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
APTC80A10SCTGMOSFET 2N-CH 800V 42A SP4 |
3682 | 154.37 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 2 N-Channel (Half Bridge) | Standard | 800V | 42A | 100mOhm @ 21A, 10V | 3.9V @ 3mA | 273nC @ 10V | 6761pF @ 25V | 416W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
APTM100H45FT3GMOSFET 4N-CH 1000V 18A SP3 |
3119 | 154.49 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 4 N-Channel (Half Bridge) | Standard | 1000V (1kV) | 18A | 540mOhm @ 9A, 10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
MSCC60VRM99CT3AGPM-MOSFET-COOLMOS-SBD-SP3F |
2546 | 159.05 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | - | - | 600V | 19A (Tc) | - | - | - | - | - | - | Chassis Mount |
|
APTM50AM38FTGMOSFET 2N-CH 500V 90A SP4 |
3374 | 160.95 |
ДобавитьНемедленный |
Datenblatt |
Bulk | POWER MOS 7® | Active | 2 N-Channel (Half Bridge) | Standard | 500V | 90A | 45mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
APTM50HM75FTGMOSFET 4N-CH 500V 46A SP4 |
3233 | 162.46 |
ДобавитьНемедленный |
Datenblatt |
Bulk | - | Active | 4 N-Channel (Half Bridge) | Standard | 500V | 46A | 90mOhm @ 23A, 10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | 357W | -40°C ~ 150°C (TJ) | Chassis Mount |
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