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| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMV20XNEA,2156.3A, 20V, N CHANNEL, SILICON, M |
3299 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
PMPB10XNE18420 V, SINGLE N CHANNEL TRENCH MO |
2013 | 1.00 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
PSMN4R8-100BSE,118N CHANNEL 100V 4.8 MOHM STANDAR |
2169 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
PSMN8R5-100ESPOWER FIELD-EFFECT TRANSISTOR, 1 |
2806 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
PSMN5R0-100ES127120A, 100V, 0.005OHM, N CHANNE |
3521 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
FW342-T-TL-HN CHANNEL AND P CHANNEL SILICON |
3188 | 1.00 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
PMCXB900UEL/S500,1470.6A, 20V, 2-ELEMENT, N CHANNEL |
3375 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
2SJ633-E4A, 60V, P-CHANNEL MOSFET |
3312 | 1.00 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
NX7002BKW,1150.24A, 60V, N CHANNEL MOSFET, SC |
2436 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF640S247018A, 200V, 0.18OHM, N-CHANNEL |
2244 | 0.00 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
PMV50ENEA,2153.9A, 30V, N CHANNEL, SILICON, M |
3913 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
SP8M4HZGTB30V DUAL NCH+PCH POWER MOSFET. S |
2830 | 2.55 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N and P-Channel | Standard | 30V | 9A (Ta), 7A (Ta) | 18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V | 2.5V @ 1mA | 15nC @ 5V, 25nC @ 5V | 1190pF @ 10V, 2600pF @ 10V | 1.4W (Ta) | 150°C (TJ) | Surface Mount |
|
|
PMV28UNEA,2152.9A, 20V, N CHANNEL, SILICON, M |
2414 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
2SJ293-E15A, 60V, P-CHANNEL MOSFET |
3578 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
IPI60R199CPCOOLMOS N-CHANNEL POWER MOSFET |
2648 | 1.00 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
AFT26P100-4WSR3,128RF N CHANNEL, MOSFET |
2505 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
BUK6209-30CPFET, 50A I(D), 30V, 0.0192OHM |
2580 | 0.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
PSMN035-150BPOWER FIELD-EFFECT TRANSISTOR, 5 |
3388 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRF630BTSTUIRF630B - 200V N-CHANNEL MOSFET |
3198 | 1.00 |
ДобавитьНемедленный |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
|
PMV100ENEA,2153A, 30V, N CHANNEL, SILICON, MOS |
3825 | 1.00 |
ДобавитьНемедленный |
Datenblatt |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |
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