Transistors - Bipolar (BJT) - Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Packaging	Series	ProductStatus	TransistorType	Current-Collector(Ic)(Max)	Voltage-CollectorEmitterBreakdown(Max)	VceSaturation(Max)@IbIc	Current-CollectorCutoff(Max)	DCCurrentGain(hFE)(Min)@IcVce	Power-Max	Frequency-Transition	OperatingTemperature	MountingType
2N5612 POWER BJT Microchip Technology	2108	41.39	- + Добавить Немедленный	Bulk	-	Active	NPN	5 A	100 V	-	-	-	25 W	-	-	Through Hole
2N5611 POWER BJT Microchip Technology	2297	41.39	- + Добавить Немедленный	Bulk	-	Active	PNP	5 A	100 V	-	-	-	25 W	-	-	Through Hole
2N5609 POWER BJT Microchip Technology	3160	41.39	- + Добавить Немедленный	Bulk	-	Active	PNP	5 A	80 V	750mV @ 250µA, 2.5mA	-	-	25 W	-	-65°C ~ 200°C (TJ)	Through Hole
2N5607 POWER BJT Microchip Technology	2912	41.39	- + Добавить Немедленный	Bulk	-	Active	PNP	5 A	80 V	-	-	-	25 W	-	-	Through Hole
2N5605 POWER BJT Microchip Technology	3080	41.39	- + Добавить Немедленный	Bulk	-	Active	PNP	5 A	60 V	750mV @ 250µA, 2.5mA	-	-	25 W	-	-65°C ~ 200°C (TJ)	Through Hole
2N5610 POWER BJT Microchip Technology	2665	41.39	- + Добавить Немедленный	Bulk	-	Active	PNP	5 A	80 V	1.5V @ 500µA, 2.5mA	-	-	25 W	-	-65°C ~ 200°C (TJ)	Through Hole
2N5601 POWER BJT Microchip Technology	2082	41.39	- + Добавить Немедленный	Bulk	-	Active	PNP	2 A	80 V	850mV @ 200µA, 1mA	-	-	20 W	-	-65°C ~ 200°C (TJ)	Through Hole
2N5602 POWER BJT Microchip Technology	2418	41.39	- + Добавить Немедленный	Bulk	-	Active	PNP	2 A	80 V	850mV @ 200µA, 1mA	-	-	20 W	-	-65°C ~ 200°C (TJ)	Through Hole
2N5606 POWER BJT Microchip Technology	3841	41.39	- + Добавить Немедленный	Bulk	-	Active	NPN	5 A	60 V	1.5V @ 500µA, 2.5mA	-	-	25 W	-	-65°C ~ 200°C (TJ)	Through Hole
2N5598 POWER BJT Microchip Technology	3954	41.39	- + Добавить Немедленный	Bulk	-	Active	PNP	2 A	60 V	850mV @ 200µA, 1mA	-	-	20 W	-	-65°C ~ 200°C (TJ)	Through Hole
2N5600 POWER BJT Microchip Technology	2247	41.39	- + Добавить Немедленный	Bulk	-	Active	PNP	2 A	80 V	-	-	-	20 W	-	-	Through Hole
2N5603 POWER BJT Microchip Technology	3371	41.39	- + Добавить Немедленный	Bulk	-	Active	PNP	2 A	100 V	850mV @ 200µA, 1mA	-	-	20 W	-	-65°C ~ 200°C (TJ)	Through Hole
2N5604 POWER BJT Microchip Technology	2115	41.39	- + Добавить Немедленный	Bulk	-	Active	NPN	2 A	100 V	-	-	-	20 W	-	-	Through Hole
2N5608 POWER BJT Microchip Technology	2463	41.39	- + Добавить Немедленный	Bulk	-	Active	PNP	5 A	80 V	1.5V @ 500µA, 2.5mA	-	-	25 W	-	-65°C ~ 200°C (TJ)	Through Hole
JANSL2N3700UB RH SMALL-SIGNAL BJT Microchip Technology	3967	41.40	- + Добавить Немедленный	Bulk	Military, MIL-PRF-19500/391	Active	NPN	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount
JANSD2N3700UB RH SMALL-SIGNAL BJT Microchip Technology	2449	41.40	- + Добавить Немедленный	Bulk	Military, MIL-PRF-19500/391	Active	NPN	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount
JANSM2N3700UB RH SMALL-SIGNAL BJT Microchip Technology	2342	41.40	- + Добавить Немедленный	Bulk	Military, MIL-PRF-19500/391	Active	NPN	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount
JANSP2N3700UB RH SMALL-SIGNAL BJT Microchip Technology	2363	41.40	- + Добавить Немедленный	Bulk	Military, MIL-PRF-19500/391	Active	NPN	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount
JANSM2N3700UB/TR TRANS NPN 80V 1A UB Microchip Technology	2789	41.55	- + Добавить Немедленный	Tape & Reel (TR)	Military, MIL-PRF-19500/391	Active	NPN	1 A	80 V	500mV @ 50mA, 500mA	10nA	100 @ 150mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount
JANSR2N3700UB/TR TRANS NPN 80V 1A UB Microchip Technology	2855	41.55	- + Добавить Немедленный	Tape & Reel (TR)	Military, MIL-PRF-19500/391	Active	NPN	1 A	80 V	500mV @ 50mA, 500mA	10nA	50 @ 500mA, 10V	500 mW	-	-65°C ~ 200°C (TJ)	Surface Mount