Transistors - Bipolar (BJT) - Single, Pre-Biased - Element(Гонконг) Technology Co., Ltd.

Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	ProductStatus	TransistorType	Current-Collector(Ic)(Max)	Voltage-CollectorEmitterBreakdown(Max)	Resistor-Base(R1)	Resistor-EmitterBase(R2)	DCCurrentGain(hFE)(Min)@IcVce	VceSaturation(Max)@IbIc	Current-CollectorCutoff(Max)	Frequency-Transition	Power-Max	MountingType
PDTC114EQBZ PDTC114EQB/SOT8015/DFN1110D-3 Nexperia USA Inc.	2463	0.28	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	PNP - Pre-Biased	100 mA	50 V	10 kOhms	10 kOhms	30 @ 5mA, 5V	100mV @ 500µA, 10mA	100nA	180 MHz	340 mW	Surface Mount, Wettable Flank
FJY3002R 0.1A, 50V, NPN Fairchild Semiconductor	3095	0.03	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	NPN - Pre-Biased	100 mA	50 V	10 kOhms	10 kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250 MHz	200 mW	Surface Mount
FJV3103RMTF 0.1A, 50V, NPN Fairchild Semiconductor	2086	0.03	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	NPN - Pre-Biased	100 mA	50 V	22 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250 MHz	200 mW	Surface Mount
FJN4305RTA 0.1A, 50V, PNP, TO-92 Fairchild Semiconductor	3147	0.03	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	PNP - Pre-Biased	100 mA	50 V	4.7 kOhms	10 kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200 MHz	300 mW	Through Hole
BCR146E6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	3475	0.03	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	Active	NPN - Pre-Biased	70 mA	50 V	47 kOhms	22 kOhms	50 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	150 MHz	200 mW	Surface Mount
BCR198E6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	3936	0.03	- + Добавить Немедленный	Datenblatt	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
FJY3004R-ON 0.1A, 50V, NPN onsemi	3253	0.03	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	NPN - Pre-Biased	100 mA	50 V	47 kOhms	47 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250 MHz	200 mW	Surface Mount
FJX4006RTF 0.1A, 50V, PNP Fairchild Semiconductor	2456	0.03	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	PNP - Pre-Biased	100 mA	50 V	10 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200 MHz	200 mW	Surface Mount
FJV3110RMTF-ON 0.1A, 40V, NPN onsemi	2522	0.03	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	NPN - Pre-Biased	100 mA	40 V	10 kOhms	-	100 @ 1mA, 5V	300mV @ 1mA, 10mA	100nA (ICBO)	250 MHz	200 mW	Surface Mount
DTC113ZCA-TP TRANS PREBIAS NPN 200MW SOT23-3L Micro Commercial Co	3241	0.25	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	NPN - Pre-Biased	100 mA	-	1 kOhms	10 kOhms	33 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250 MHz	200 mW	Surface Mount
MUN2136T1G TRANS PREBIAS PNP 230MW SC59 onsemi	2638	0.25	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	PNP - Pre-Biased	100 mA	50 V	100 kOhms	100 kOhms	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	230 mW	Surface Mount
BCR191E6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	3468	0.03	- + Добавить Немедленный	Datenblatt	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
BCR196E6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	3427	0.03	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	PNP - Pre-Biased	70 mA	50 V	47 kOhms	22 kOhms	50 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	150 MHz	200 mW	Surface Mount
FJY3004R 0.1A, 50V, NPN Fairchild Semiconductor	2731	0.03	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	NPN - Pre-Biased	100 mA	50 V	47 kOhms	47 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250 MHz	200 mW	Surface Mount
BCR129FE6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	3375	0.03	- + Добавить Немедленный	Datenblatt	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
BCR 162 E6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	2681	0.03	- + Добавить Немедленный	Datenblatt	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
BCR185E6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	3278	0.03	- + Добавить Немедленный	Datenblatt	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
PDTB143EQA147 PDTB143EQA SMALL SIGNAL FET NXP USA Inc.	2350	0.03	- + Добавить Немедленный	Datenblatt	Bulk	PDTB143	Active	PNP - Pre-Biased	500 mA	50 V	4.7 kOhms	4.7 kOhms	60 @ 50mA, 5V	100mV @ 2.5mA, 50mA	500nA	150 MHz	325 mW	Surface Mount
BCR 198 E6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	3914	0.03	- + Добавить Немедленный	Datenblatt	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-
FJX4006RTF-ON 0.1A, 50V, PNP onsemi	2523	0.03	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	PNP - Pre-Biased	100 mA	50 V	10 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200 MHz	200 mW	Surface Mount

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