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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus TransistorType Current-Collector(Ic)(Max) Voltage-CollectorEmitterBreakdown(Max) VceSaturation(Max)@IbIc Current-CollectorCutoff(Max) DCCurrentGain(hFE)(Min)@IcVce Power-Max Frequency-Transition OperatingTemperature MountingType
FFB3906

FFB3906

PNP MULTI-CHIP GENERAL PURPOSE A

onsemi

2901 1.00
- +

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FFB3906

Datenblatt

Bulk * Active - - - - - - - - - -
BC846SF

BC846SF

BC846S - NPN GENERAL PURPOSE DOU

Nexperia USA Inc.

3115 1.00
- +

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Немедленный

BC846SF

Datenblatt

Bulk * Active - - - - - - - - - -
BC847BS

BC847BS

NPN MULTI-CHIP GENERAL PURPOSE A

onsemi

2871 1.00
- +

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BC847BS

Datenblatt

Bulk * Active - - - - - - - - - -
PBSS4112PAN,115

PBSS4112PAN,115

NEXPERIA PBSS4112PAN - 120 V, 1

Nexperia USA Inc.

3009 1.00
- +

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PBSS4112PAN,115

Datenblatt

Bulk * Active - - - - - - - - - -
PHPT610035PKX

PHPT610035PKX

NEXPERIA PHPT610035PK - PNP/PNP

NXP Semiconductors

2434 1.00
- +

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PHPT610035PKX

Datenblatt

Bulk * Active - - - - - - - - - -
PMP5201Y,135

PMP5201Y,135

NEXPERIA PMP5201Y - PNP/PNP MATC

NXP Semiconductors

3144 1.00
- +

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PMP5201Y,135

Datenblatt

Bulk * Active - - - - - - - - - -
PHPT610035NKX

PHPT610035NKX

NEXPERIA PHPT610035NK - NPN/NPN

NXP Semiconductors

2415 1.00
- +

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PHPT610035NKX

Datenblatt

Bulk * Active - - - - - - - - - -
NSS60101DMR6T1G

NSS60101DMR6T1G

NSS60101DMR6T1G - 60 V, 1 A, LOW

onsemi

2645 1.00
- +

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Bulk - Obsolete 2 NPN (Dual) 1A 60V 250mV @ 50mA, 1A 100nA (ICBO) 250 @ 100mA, 5V 400mW 200MHz -55°C ~ 150°C (TJ) Surface Mount
PHPT610030PKX

PHPT610030PKX

PHPT610030PK - PNP/PNP HIGH POWE

NXP Semiconductors

3978 1.00
- +

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Bulk - Obsolete 2 PNP (Dual) 3A 100V 360mV @ 200mA, 2A 100nA 150 @ 500mA, 10V 1.25W 125MHz 175°C (TJ) Surface Mount
UMW ULN2803A

UMW ULN2803A

SOP-18 DARLINGTON TRANSISTOR ARR

UTD Semiconductor

3955 1.12
- +

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UMW ULN2803A

Datenblatt

Tape & Reel (TR) UMW Active 8 NPN Darlington 500mA - 1.6V @ 500µA, 350mA 20µA - - - -40°C ~ 150°C (TJ) Surface Mount
NTE2018

NTE2018

IC-8 CHAN CMOS/TTL DR 18-PIN DIP

NTE Electronics, Inc

3842 3.81
- +

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NTE2018

Datenblatt

Bag - Active 8 NPN Darlington 600mA 50V 1.6V @ 350mA, 500A - - 1W - -20°C ~ 85°C (TA) Through Hole
LS352 SOIC 8L

LS352 SOIC 8L

TIGHTLY MATCHED, MONOLITHIC DUAL

Linear Integrated Systems, Inc.

3343 7.39
- +

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LS352 SOIC 8L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active 2 PNP (Dual) 10mA 60V 500mV @ 100µA, 1mA 200pA (ICBO) 200 @ 1mA, 5V 500mW 200MHz 150°C (TJ) Surface Mount
IT121 SOIC 8L

IT121 SOIC 8L

TIGHTLY MATCHED, MONOLITHIC DUAL

Linear Integrated Systems, Inc.

3189 7.47
- +

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Немедленный

IT121 SOIC 8L

Datenblatt

Tape & Reel (TR),Cut Tape (CT) IT120 Active 2 NPN (Dual) 10mA 45V 500mV @ 50µA, 500µA 1nA (ICBO) 100 @ 1mA, 5V 500mW 180MHz -55°C ~ 150°C Surface Mount
ULS2014R-883

ULS2014R-883

HIGH-VOLTAGE, HIGH-CURRENT DARLI

Allegro MicroSystems

3918 3.32
- +

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Немедленный

ULS2014R-883

Datenblatt

Bulk - Active 7 NPN Darlington 600mA 50V 1.9V @ 600µA, 500mA 500µA - 1W - -55°C ~ 125°C (TA) Through Hole
NTE912

NTE912

IC-3 ISOLATED TRANS. 14-LEAD

NTE Electronics, Inc

2020 6.59
- +

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NTE912

Datenblatt

Bag - Active 5 NPN 50mA 24V 230mV @ 1mA, 10mA 500nA 40 @ 1mA, 3V 750mW 550MHz -55°C ~ 125°C (TA) Through Hole
IT121 PDIP 8L

IT121 PDIP 8L

TIGHTLY MATCHED, MONOLITHIC DUAL

Linear Integrated Systems, Inc.

2228 7.22
- +

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Немедленный

IT121 PDIP 8L

Datenblatt

Tube IT120 Active 2 NPN (Dual) 10mA 45V 500mV @ 50µA, 500µA 1nA (ICBO) 100 @ 1mA, 5V 500mW 180MHz -55°C ~ 150°C Through Hole
2N2919A

2N2919A

TO 78 DUAL SILICON TRANSISTORS N

Solid State Inc.

2349 9.00
- +

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Немедленный

Bulk - Active 2 NPN (Dual) 30mA 60V 350mV @ 100µA, 1mA 2nA 150 @ 1mA, 5V 500mW - - Through Hole
2N2914

2N2914

TO 78 DUAL SILICON TRANSISTORS N

Solid State Inc.

3683 9.00
- +

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Немедленный

Bulk - Active 2 NPN (Dual) - - - - - - - - Through Hole
2N2920

2N2920

TO 78 DUAL SILICON TRANSISTORS N

Solid State Inc.

3367 9.00
- +

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Немедленный

Bulk - Active 2 NPN (Dual) 30mA 60V 350mV @ 100µA, 1mA 2nA 300 @ 1mA, 5V 500mW - - Through Hole
2N2918

2N2918

TO 78 DUAL SILICON TRANSISTORS N

Solid State Inc.

3789 9.00
- +

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Немедленный

Bulk - Active 2 NPN (Dual) 30mA 45V 350mV @ 100µA, 1mA 2nA 300 @ 1mA, 5V 500mW - - Through Hole
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