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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
IX6R11S6

IX6R11S6

IC GATE DRVR HALF-BRIDGE 18SOIC

IXYS

3865 0.00
- +

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Немедленный

IX6R11S6

Datenblatt

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 35V 6V, 9.6V 6A, 6A Non-Inverting 600 V 25ns, 17ns -40°C ~ 125°C (TA) Surface Mount
EL7104CS

EL7104CS

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics America Inc

3522 0.00
- +

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Немедленный

EL7104CS

Datenblatt

Tube - Obsolete Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 16V 0.8V, 2.4V 4A, 4A Non-Inverting - 7.5ns, 10ns -40°C ~ 125°C (TJ) Surface Mount
EL7154CN

EL7154CN

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

Renesas Electronics America Inc

2015 0.00
- +

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Немедленный

EL7154CN

Datenblatt

Tube - Obsolete High-Side or Low-Side Synchronous 2 IGBT, N-Channel MOSFET 4.5V ~ 16V 0.6V, 2.4V 4A, 4A Non-Inverting - 4ns, 4ns -40°C ~ 125°C (TJ) Through Hole
IR2103SPBF

IR2103SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

3511 1.00
- +

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Немедленный

IR2103SPBF

Datenblatt

Bulk,Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 210mA, 360mA Inverting, Non-Inverting 600 V 100ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR21064SPBF

IR21064SPBF

IC GATE DRVR HI/LOW SIDE 14SOIC

Infineon Technologies

3508 0.00
- +

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Немедленный

IR21064SPBF

Datenblatt

Tube - Obsolete High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR21084SPBF

IR21084SPBF

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies

3006 0.00
- +

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Немедленный

IR21084SPBF

Datenblatt

Tube - Obsolete Half-Bridge Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.9V 200mA, 350mA Non-Inverting 600 V 150ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2135SPBF

IR2135SPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies

2506 0.00
- +

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Немедленный

IR2135SPBF

Datenblatt

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2.2V 250mA, 500mA Inverting 600 V 90ns, 40ns 125°C (TJ) Surface Mount
IR21362SPBF

IR21362SPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies

3512 0.00
- +

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Немедленный

IR21362SPBF

Datenblatt

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 11.5V ~ 20V 0.8V, 3V 200mA, 350mA Inverting, Non-Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
IR2136JPBF

IR2136JPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies

2043 0.00
- +

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Немедленный

IR2136JPBF

Datenblatt

Tube - Obsolete Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 3V 200mA, 350mA Inverting 600 V 125ns, 50ns -40°C ~ 150°C (TJ) Surface Mount
MC34151PG

MC34151PG

IC GATE DRVR LOW-SIDE 8DIP

onsemi

2277 0.58
- +

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Немедленный

MC34151PG

Datenblatt

Bulk,Tube - Obsolete Low-Side Independent 2 N-Channel MOSFET 6.5V ~ 18V 0.8V, 2.6V 1.5A, 1.5A Inverting - 31ns, 32ns 0°C ~ 150°C (TJ) Through Hole
MC34152PG

MC34152PG

IC GATE DRVR LOW-SIDE 8DIP

onsemi

3677 0.00
- +

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Немедленный

MC34152PG

Datenblatt

Bulk,Tube - Obsolete Low-Side Independent 2 N-Channel MOSFET 6.1V ~ 18V 0.8V, 2.6V 1.5A, 1.5A Non-Inverting - 36ns, 32ns 0°C ~ 150°C (TJ) Through Hole
EL7154CS

EL7154CS

IC GATE DRVR HI/LOW SIDE 8SOIC

Renesas Electronics America Inc

2256 0.00
- +

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Немедленный

EL7154CS

Datenblatt

Tube - Obsolete High-Side or Low-Side Synchronous 2 IGBT, N-Channel MOSFET 4.5V ~ 16V 0.6V, 2.4V 4A, 4A Non-Inverting - 4ns, 4ns -40°C ~ 125°C (TJ) Surface Mount
EL7155CN

EL7155CN

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

Renesas Electronics America Inc

2250 0.00
- +

Добавить

Немедленный

Tube - Obsolete High-Side or Low-Side Synchronous 2 IGBT 4.5V ~ 16.5V 0.8V, 2.4V 3.5A, 3.5A Non-Inverting - 14.5ns, 15ns -40°C ~ 125°C (TJ) Through Hole
EL7155CS

EL7155CS

IC GATE DRVR HI/LOW SIDE 8SOIC

Renesas Electronics America Inc

2482 0.00
- +

Добавить

Немедленный

Tube - Obsolete High-Side or Low-Side Synchronous 2 IGBT 4.5V ~ 16.5V 0.8V, 2.4V 3.5A, 3.5A Non-Inverting - 14.5ns, 15ns -40°C ~ 125°C (TJ) Surface Mount
EL7156CN

EL7156CN

IC GATE DRV HI-SIDE/LO-SIDE 8DIP

Renesas Electronics America Inc

3659 0.00
- +

Добавить

Немедленный

EL7156CN

Datenblatt

Tube - Obsolete High-Side or Low-Side Single 1 IGBT 4.5V ~ 16.5V 0.8V, 2.4V 3.5A, 3.5A Non-Inverting - 14.5ns, 15ns -40°C ~ 125°C (TJ) Through Hole
EL7156CS

EL7156CS

IC GATE DRVR HI/LOW SIDE 8SOIC

Renesas Electronics America Inc

2849 0.00
- +

Добавить

Немедленный

EL7156CS

Datenblatt

Tube - Obsolete High-Side or Low-Side Single 1 IGBT 4.5V ~ 16.5V 0.8V, 2.4V 3.5A, 3.5A Non-Inverting - 14.5ns, 15ns -40°C ~ 125°C (TJ) Surface Mount
EL7158IS

EL7158IS

IC GATE DRVR HI/LOW SIDE 8SOIC

Renesas Electronics America Inc

3268 0.00
- +

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Немедленный

EL7158IS

Datenblatt

Tube - Obsolete High-Side or Low-Side Single 1 IGBT 4.5V ~ 12V 0.8V, 2.4V 12A, 12A Non-Inverting - 12ns, 12.2ns -40°C ~ 125°C (TJ) Surface Mount
EL7202CN

EL7202CN

IC GATE DRVR LOW-SIDE 8DIP

Renesas Electronics America Inc

3770 3.93
- +

Добавить

Немедленный

EL7202CN

Datenblatt

Tube,Tube - Obsolete Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 15V 0.8V, 2.4V 2A, 2A Non-Inverting - 7.5ns, 10ns -40°C ~ 125°C (TJ) Through Hole
EL7202CS

EL7202CS

IC GATE DRVR LOW-SIDE 8SOIC

Renesas Electronics America Inc

3793 0.00
- +

Добавить

Немедленный

EL7202CS

Datenblatt

Tube - Obsolete Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 15V 0.8V, 2.4V 2A, 2A Non-Inverting - 7.5ns, 10ns -40°C ~ 125°C (TJ) Surface Mount
EL7212CN

EL7212CN

IC GATE DRVR LOW-SIDE 8DIP

Renesas Electronics America Inc

3161 0.00
- +

Добавить

Немедленный

EL7212CN

Datenblatt

Tube - Obsolete Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 15V 0.8V, 2.4V 2A, 2A Inverting - 7.5ns, 10ns -40°C ~ 125°C (TJ) Through Hole
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