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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
DHP1070N10N5AUMA1

DHP1070N10N5AUMA1

INT. POWERSTAGE/DRIVER PG-IQFN-3

Infineon Technologies

3776 3.35
- +

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Немедленный

Tape & Reel (TR) - Active - - - - - - - - - - - -
ISL2111AR4Z

ISL2111AR4Z

IC GATE DRVR HALF-BRIDGE 12DFN

Renesas Electronics America Inc

2813 3.36
- +

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Немедленный

ISL2111AR4Z

Datenblatt

Tube - Active Half-Bridge Independent 2 N-Channel MOSFET 8V ~ 14V 1.4V, 2.2V 3A, 4A Non-Inverting 114 V 9ns, 7.5ns -40°C ~ 125°C (TJ) Surface Mount
ISL2111AR4Z-T

ISL2111AR4Z-T

IC GATE DRVR HALF-BRIDGE 12DFN

Renesas Electronics America Inc

2739 3.36
- +

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Немедленный

ISL2111AR4Z-T

Datenblatt

Tape & Reel (TR) - Active Half-Bridge Independent 2 N-Channel MOSFET 8V ~ 14V 1.4V, 2.2V 3A, 4A Non-Inverting 114 V 9ns, 7.5ns -40°C ~ 125°C (TJ) Surface Mount
ISL2111BR4Z-T

ISL2111BR4Z-T

IC GATE DRVR HALF-BRIDGE 8DFN

Renesas Electronics America Inc

3256 3.36
- +

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Немедленный

ISL2111BR4Z-T

Datenblatt

Tape & Reel (TR) - Active Half-Bridge Independent 2 N-Channel MOSFET 8V ~ 14V 1.4V, 2.2V 3A, 4A Non-Inverting 114 V 9ns, 7.5ns -40°C ~ 125°C (TJ) Surface Mount
ISL2110ABZ-T

ISL2110ABZ-T

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics America Inc

2062 3.37
- +

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Немедленный

ISL2110ABZ-T

Datenblatt

Tape & Reel (TR) - Active Half-Bridge Independent 2 N-Channel MOSFET 8V ~ 14V 3.7V, 7.4V 3A, 4A Non-Inverting 114 V 9ns, 7.5ns -40°C ~ 125°C (TJ) Surface Mount
MD1812K6-G

MD1812K6-G

IC GATE DRVR HALF-BRIDGE 16QFN

Microchip Technology

2543 3.38
- +

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Немедленный

MD1812K6-G

Datenblatt

Tape & Reel (TR) - Active Half-Bridge Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 13V 0.3V, 1.7V 2A, 2A Non-Inverting - 6ns, 6ns -25°C ~ 125°C (TA) Surface Mount
LTC4441IMSE#TRPBF

LTC4441IMSE#TRPBF

IC GATE DRVR LOW-SIDE 10MSOP

Analog Devices Inc.

2527 3.83
- +

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Немедленный

LTC4441IMSE#TRPBF

Datenblatt

Tape & Reel (TR) - Active Low-Side Single 1 N-Channel MOSFET 5V ~ 25V 1.8V, 2V 6A, 6A Non-Inverting - 13ns, 8ns -40°C ~ 125°C (TJ) Surface Mount
TC4420VAT

TC4420VAT

IC GATE DRVR LOW-SIDE TO220-5

Microchip Technology

3009 3.40
- +

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Немедленный

TC4420VAT

Datenblatt

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 6A, 6A Non-Inverting - 25ns, 25ns -40°C ~ 150°C (TJ) Through Hole
TC4429VAT

TC4429VAT

IC GATE DRVR LOW-SIDE TO220-5

Microchip Technology

3461 3.40
- +

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Немедленный

TC4429VAT

Datenblatt

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 6A, 6A Inverting - 25ns, 25ns -40°C ~ 150°C (TJ) Through Hole
TC4421ESM713

TC4421ESM713

IC GATE DRVR LOW-SIDE 8SOIJ

Microchip Technology

2281 3.40
- +

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Немедленный

TC4421ESM713

Datenblatt

Tape & Reel (TR) - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 9A, 9A Inverting - 60ns, 60ns -40°C ~ 150°C (TJ) Surface Mount
TC4422ESM

TC4422ESM

IC GATE DRVR LOW-SIDE 8SOIJ

Microchip Technology

3021 3.40
- +

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Немедленный

TC4422ESM

Datenblatt

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 9A, 9A Non-Inverting - 60ns, 60ns -40°C ~ 150°C (TJ) Surface Mount
TC4422ESM713

TC4422ESM713

IC GATE DRVR LOW-SIDE 8SOIJ

Microchip Technology

2261 3.40
- +

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Немедленный

TC4422ESM713

Datenblatt

Tape & Reel (TR) - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 9A, 9A Non-Inverting - 60ns, 60ns -40°C ~ 150°C (TJ) Surface Mount
MAX15018BASA+

MAX15018BASA+

IC GATE DRVR HALF-BRIDGE 8SOIC

Analog Devices Inc./Maxim Integrated

2242 3.43
- +

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Немедленный

MAX15018BASA+

Datenblatt

Tube - Active Half-Bridge Independent 2 N-Channel MOSFET 8V ~ 12.6V - 3A, 3A Inverting, Non-Inverting 125 V 50ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
LT8672IDDB#TRPBF

LT8672IDDB#TRPBF

IC GATE DRVR HIGH-SIDE 10DFN

Analog Devices Inc.

2427 3.89
- +

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Немедленный

LT8672IDDB#TRPBF

Datenblatt

Tape & Reel (TR) - Active High-Side Single 1 N-Channel MOSFET 3V ~ 42V - - Non-Inverting - - -40°C ~ 125°C (TJ) Surface Mount
LT8672IMS#TRPBF

LT8672IMS#TRPBF

IC GATE DRVR HIGH-SIDE 10MSOP

Analog Devices Inc.

3409 3.90
- +

Добавить

Немедленный

LT8672IMS#TRPBF

Datenblatt

Tape & Reel (TR) - Active High-Side Single 1 N-Channel MOSFET 3V ~ 42V - - Non-Inverting - - -40°C ~ 125°C (TJ) Surface Mount
LT8672JMS#TRPBF

LT8672JMS#TRPBF

ACTIVE RECTIFIER CNTR W/ REVERSE

Analog Devices Inc.

3764 3.90
- +

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Немедленный

LT8672JMS#TRPBF

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q100 Active High-Side Single 1 N-Channel MOSFET 3V ~ 42V - -50mA, 300mA Non-Inverting - - -40°C ~ 150°C (TJ) Surface Mount
NCV303150MTW

NCV303150MTW

INTEGRATED DRIVER & MOSFET

onsemi

2592 3.47
- +

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Немедленный

NCV303150MTW

Datenblatt

Tape & Reel (TR) - Active High-Side and Low-Side Single 1 N-Channel MOSFET 4.5V ~ 5.5V 0.85V, 2.3V 80A, 80A Non-Inverting - 17ns, 26ns -40°C ~ 125°C (TA) Surface Mount
ISL2110AR4Z

ISL2110AR4Z

IC GATE DRVR HALF-BRIDGE 12DFN

Renesas Electronics America Inc

3671 3.47
- +

Добавить

Немедленный

ISL2110AR4Z

Datenblatt

Tube - Active Half-Bridge Independent 2 N-Channel MOSFET 8V ~ 14V 3.7V, 7.4V 3A, 4A Non-Inverting 114 V 9ns, 7.5ns -40°C ~ 125°C (TJ) Surface Mount
ISL2110AR4Z-T

ISL2110AR4Z-T

IC GATE DRVR HALF-BRIDGE 12DFN

Renesas Electronics America Inc

2576 3.47
- +

Добавить

Немедленный

ISL2110AR4Z-T

Datenblatt

Tape & Reel (TR) - Active Half-Bridge Independent 2 N-Channel MOSFET 8V ~ 14V 3.7V, 7.4V 3A, 4A Non-Inverting 114 V 9ns, 7.5ns -40°C ~ 125°C (TJ) Surface Mount
TC4421VPA

TC4421VPA

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

3867 3.51
- +

Добавить

Немедленный

TC4421VPA

Datenblatt

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 9A, 9A Inverting - 60ns, 60ns -40°C ~ 150°C (TJ) Through Hole
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