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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DrivenConfiguration ChannelType NumberofDrivers GateType Voltage-Supply LogicVoltage-VILVIH Current-PeakOutput(SourceSink) InputType HighSideVoltage-Max(Bootstrap) Rise/FallTime(Typ) OperatingTemperature MountingType
MIC4429ZN

MIC4429ZN

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

3664 2.49
- +

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MIC4429ZN

Datenblatt

Tube - Active Low-Side Single 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 6A, 6A Inverting - 12ns, 13ns 0°C ~ 150°C (TJ) Through Hole
L6498LD

L6498LD

IC GATE DRV HI-SIDE/LO-SIDE 14SO

STMicroelectronics

3733 2.78
- +

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Немедленный

L6498LD

Datenblatt

Tube - Active High-Side or Low-Side Independent 2 IGBT, N-Channel MOSFET 10V ~ 20V 1.45V, 2V 2A, 2.5A CMOS/TTL 500 V 25ns, 25ns -40°C ~ 125°C (TJ) Surface Mount
MIC4225YM

MIC4225YM

IC GATE DRVR LOW-SIDE 8SOIC

Microchip Technology

3029 2.79
- +

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MIC4225YM

Datenblatt

Tube - Active Low-Side Independent 2 N-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 4A, 4A Inverting, Non-Inverting - 15ns, 15ns -40°C ~ 125°C (TJ) Surface Mount
IR25600SPBF

IR25600SPBF

IC GATE DRVR LOW-SIDE 8SOIC

Infineon Technologies

3664 1.00
- +

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Немедленный

IR25600SPBF

Datenblatt

Bulk,Tube - Active Low-Side Independent 2 IGBT, N-Channel MOSFET 6V ~ 20V 0.8V, 2.7V 2.3A, 3.3A Non-Inverting - 15ns, 10ns -40°C ~ 150°C (TJ) Surface Mount
IR4427SPBF

IR4427SPBF

IC GATE DRVR LOW-SIDE 8SOIC

Infineon Technologies

3122 1.00
- +

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Немедленный

IR4427SPBF

Datenblatt

Bulk,Tube - Active Low-Side Independent 2 IGBT, N-Channel MOSFET 6V ~ 20V 0.8V, 2.7V 2.3A, 3.3A Non-Inverting - 15ns, 10ns -40°C ~ 150°C (TJ) Surface Mount
MAX628CSA+

MAX628CSA+

IC GATE DRVR LOW-SIDE 8SOIC

Analog Devices Inc./Maxim Integrated

2615 5.49
- +

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Немедленный

MAX628CSA+

Datenblatt

Tube - Active Low-Side Independent 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 2A, 2A Inverting, Non-Inverting - 25ns, 20ns 0°C ~ 70°C (TA) Surface Mount
TC4467COE

TC4467COE

IC GATE DRVR LOW-SIDE 16SOIC

Microchip Technology

3710 5.51
- +

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TC4467COE

Datenblatt

Tube - Active Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Inverting - 15ns, 15ns 0°C ~ 150°C (TJ) Surface Mount
TC4469CPD

TC4469CPD

IC GATE DRVR LOW-SIDE 14DIP

Microchip Technology

2704 5.58
- +

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TC4469CPD

Datenblatt

Tube - Active Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Inverting, Non-Inverting - 15ns, 15ns 0°C ~ 150°C (TJ) Through Hole
TC4468EPD

TC4468EPD

IC GATE DRVR LOW-SIDE 14DIP

Microchip Technology

2392 5.58
- +

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Немедленный

TC4468EPD

Datenblatt

Tube - Active Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Non-Inverting - 15ns, 15ns -40°C ~ 150°C (TJ) Through Hole
MAX15019BASA+

MAX15019BASA+

IC GATE DRVR HALF-BRIDGE 8SOIC

Analog Devices Inc./Maxim Integrated

3847 5.67
- +

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Немедленный

MAX15019BASA+

Datenblatt

Tube - Active Half-Bridge Independent 2 N-Channel MOSFET 8V ~ 12.6V 0.8V, 2V 3A, 3A Inverting, Non-Inverting 125 V 50ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
LTC4440AIMS8E-5#PBF

LTC4440AIMS8E-5#PBF

IC GATE DRVR HIGH-SIDE 8MSOP

Analog Devices Inc.

2058 6.46
- +

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Немедленный

LTC4440AIMS8E-5#PBF

Datenblatt

Tube - Active High-Side Single 1 N-Channel MOSFET 4V ~ 15V 1.2V, 1.6V 1.1A, 1.1A Non-Inverting 80 V 10ns, 7ns -40°C ~ 125°C (TJ) Surface Mount
TPIC44H01DA

TPIC44H01DA

IC GATE DRVR HIGH-SIDE 32TSSOP

Texas Instruments

3362 5.80
- +

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Немедленный

TPIC44H01DA

Datenblatt

Tube - Active High-Side Independent 4 N-Channel MOSFET 4.5V ~ 5.5V - - Non-Inverting - - -40°C ~ 150°C (TJ) Surface Mount
IXDI614YI

IXDI614YI

IC GATE DRVR LOW-SIDE TO263-5

IXYS Integrated Circuits Division

2751 6.27
- +

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Немедленный

IXDI614YI

Datenblatt

Tube - Active Low-Side Single 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 0.8V, 3V 14A, 14A Inverting - 25ns, 18ns -55°C ~ 150°C (TJ) Surface Mount
EL7457CUZ

EL7457CUZ

IC GATE DRVR HI/LOW SIDE 16QSOP

Renesas Electronics America Inc

3580 6.57
- +

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Немедленный

EL7457CUZ

Datenblatt

Tube - Active High-Side or Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2V 2A, 2A Non-Inverting - 13.5ns, 13ns -40°C ~ 85°C (TA) Surface Mount
TC4467EOE

TC4467EOE

IC GATE DRVR LOW-SIDE 16SOIC

Microchip Technology

2932 6.70
- +

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Немедленный

TC4467EOE

Datenblatt

Tube - Active Low-Side Independent 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 0.8V, 2.4V 1.2A, 1.2A Inverting - 15ns, 15ns -40°C ~ 150°C (TJ) Surface Mount
UCC21530QDWKQ1

UCC21530QDWKQ1

IC GATE DRVR ISOLATED

Texas Instruments

3647 6.94
- +

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Немедленный

UCC21530QDWKQ1

Datenblatt

Tube Automotive, AEC-Q100 Active Half-Bridge Independent 2 IGBT, N-Channel, P-Channel MOSFET 3V ~ 18V 1.2V, 1.6V 4A, 6A CMOS/TTL - 6ns, 7ns -40°C ~ 130°C (TJ) Surface Mount
EL7155CSZ

EL7155CSZ

IC GATE DRVR HI/LOW SIDE 8SOIC

Renesas Electronics America Inc

3495 7.32
- +

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Немедленный

Tube - Active High-Side or Low-Side Synchronous 2 IGBT 4.5V ~ 16.5V 0.8V, 2.4V 3.5A, 3.5A Non-Inverting - 14.5ns, 15ns -40°C ~ 125°C (TJ) Surface Mount
IR2114SSPBF

IR2114SSPBF

IC GATE DRVR HALF-BRIDGE 24SSOP

Infineon Technologies

157 7.94
- +

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Немедленный

IR2114SSPBF

Datenblatt

Bulk,Tube - Active Half-Bridge Independent 2 IGBT 11.5V ~ 20V 0.8V, 2V 2A, 3A Non-Inverting 600 V 24ns, 7ns -40°C ~ 150°C (TJ) Surface Mount
IR2233JTRPBF

IR2233JTRPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies

2533 12.24
- +

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Немедленный

IR2233JTRPBF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active Half-Bridge 3-Phase 6 IGBT, N-Channel MOSFET 10V ~ 20V 0.8V, 2V 250mA, 500mA Inverting 1200 V 90ns, 40ns 125°C (TJ) Surface Mount
LTC7000HMSE-1#PBF

LTC7000HMSE-1#PBF

IC GATE DRVR HIGH-SIDE 16MSOP

Analog Devices Inc.

2181 9.38
- +

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Немедленный

LTC7000HMSE-1#PBF

Datenblatt

Tube - Active High-Side Single 1 N-Channel MOSFET 3.5V ~ 135V 1.8V, 1.7V - Non-Inverting 135 V 90ns, 40ns -40°C ~ 150°C (TJ) Surface Mount
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