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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
GKN71/08

GKN71/08

DIODE GEN PURP 800V 95A DO5

GeneSiC Semiconductor

2628 13.21
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GKN71/08

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 mA @ 800 V 800 V 95A -40°C ~ 180°C 1.5 V @ 60 A
UFS550GE3/TR13

UFS550GE3/TR13

DIODE GEN PURP 500V 5A DO215AB

Microchip Technology

2844 2.07
- +

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UFS550GE3/TR13

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 10 µA @ 500 V 500 V 5A -55°C ~ 175°C 1.2 V @ 5 A
JAN1N6623US

JAN1N6623US

DIODE GEN PURP 880V 1A D5A

Microchip Technology

2337 11.55
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Bulk Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 10V, 1MHz 50 ns 500 nA @ 880 V 880 V 1A -65°C ~ 150°C 1.55 V @ 1 A
JANTX1N5614US/TR

JANTX1N5614US/TR

STD RECTIFIER

Microchip Technology

3151 9.11
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Tape & Reel (TR) Military, MIL-PRF-19500/437 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 500 nA @ 200 V 200 V 1A -65°C ~ 200°C 1.3 V @ 3 A
GKR71/12

GKR71/12

DIODE GEN PURP 1.2KV 95A DO5

GeneSiC Semiconductor

2747 13.73
- +

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GKR71/12

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 mA @ 1200 V 1200 V 95A -40°C ~ 180°C 1.5 V @ 60 A
SD200SA30B.T2

SD200SA30B.T2

PIV 30V IO 60A CHIP SIZE 200MIL

SMC Diode Solutions

2281 1.80
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SD200SA30B.T2

Datenblatt

Tray RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 3300pF @ 5V, 1MHz - 6 mA @ 30 V 30 V 60A -55°C ~ 150°C 530 mV @ 60 A
JANTXV1N4946

JANTXV1N4946

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

3162 13.25
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JANTXV1N4946

Datenblatt

Bulk Military, MIL-PRF-19500/359 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 12V, 1MHz 250 ns 1 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.3 V @ 1 A
UFS560GE3/TR13

UFS560GE3/TR13

DIODE GEN PURP 600V 5A DO215AB

Microchip Technology

2968 2.07
- +

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UFS560GE3/TR13

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 60 ns 10 µA @ 600 V 600 V 5A -55°C ~ 175°C 1.35 V @ 5 A
CD6759

CD6759

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology

3356 11.55
- +

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CD6759

Datenblatt

Tape & Reel (TR) Military, MIL-PRF-19500/586 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 1A -55°C ~ 125°C 750 mV @ 1 A
VS-1N2129A

VS-1N2129A

DIODE GEN PURP 100V 60A DO203AB

Vishay General Semiconductor - Diodes Division

2548 9.11
- +

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VS-1N2129A

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 mA @ 100 V 100 V 60A -65°C ~ 200°C 1.3 V @ 188 A
NDSH50120C

NDSH50120C

SIC DIODE GEN2.0 1200V TO

onsemi

3875 13.74
- +

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NDSH50120C

Datenblatt

Tape & Reel (TR) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 3691pF @ 1V, 100kHz 0 ns 200 µA @ 1200 V 1200 V 53A (DC) -55°C ~ 175°C 1.75 V @ 50 A
SD200SA60B.T2

SD200SA60B.T2

PIV 60V IO 60A CHIP SIZE 200MIL

SMC Diode Solutions

3309 1.80
- +

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SD200SA60B.T2

Datenblatt

Tray RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 2400pF @ 5V, 1MHz - 6 mA @ 60 V 60 V 60A -55°C ~ 150°C 680 mV @ 60 A
1N6075

1N6075

DIODE GEN PURP 150V 850MA AXIAL

Microchip Technology

2918 13.26
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1N6075

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 1 µA @ 150 V 150 V 850mA -65°C ~ 155°C 2.04 V @ 9.4 A
UFS570GE3/TR13

UFS570GE3/TR13

DIODE GEN PURP 700V 5A DO215AB

Microchip Technology

2661 2.07
- +

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UFS570GE3/TR13

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 60 ns 10 µA @ 700 V 700 V 5A -55°C ~ 175°C 1.35 V @ 5 A
VS-85HFR140

VS-85HFR140

DIODE GEN PURP 1.4KV 85A DO203AB

Vishay General Semiconductor - Diodes Division

2554 11.56
- +

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VS-85HFR140

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 4.5 mA @ 1400 V 1400 V 85A -65°C ~ 150°C 1.4 V @ 267 A
JAN1N5188

JAN1N5188

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

2785 9.12
- +

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JAN1N5188

Datenblatt

Bulk Military, MIL-PRF-19500/424 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 250 ns 2 µA @ 400 V 400 V 3A -65°C ~ 175°C 1.5 V @ 9 A
JANTX1N6621US

JANTX1N6621US

DIODE GEN PURP 440V 2A D5A

Microchip Technology

2265 13.77
- +

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JANTX1N6621US

Datenblatt

Bulk Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 10V, 1MHz 30 ns 500 nA @ 440 V 440 V 2A -65°C ~ 150°C 1.4 V @ 1.2 A
IDH04SG60CXKSA2

IDH04SG60CXKSA2

DIODE SCHOTTKY 600V 4A TO220-2

Infineon Technologies

2969 1.80
- +

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IDH04SG60CXKSA2

Datenblatt

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 80pF @ 1V, 1MHz 0 ns 25 µA @ 600 V 600 V 4A (DC) -55°C ~ 175°C 2.3 V @ 4 A
JAN1N5553US

JAN1N5553US

DIODE GEN PURP 800V 3A B-MELF

WEC

509 22.44
- +

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JAN1N5553US

Datenblatt

Bulk,Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 1 µA @ 800 V 800 V 3A -65°C ~ 175°C 1.3 V @ 9 A
UFS580GE3/TR13

UFS580GE3/TR13

DIODE GEN PURP 800V 5A DO215AB

Microchip Technology

2052 2.07
- +

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Немедленный

UFS580GE3/TR13

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 60 ns 10 µA @ 800 V 800 V 5A -55°C ~ 175°C 1.35 V @ 5 A
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