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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
JANTXV1N6640US

JANTXV1N6640US

SWITCHING DIODE

Microchip Technology

2122 13.38
- +

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Bulk Military, MIL-PRF-19500/609 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 4 ns 90 µA @ 50 V 50 V 300mA -65°C ~ 175°C 1 V @ 200 mA
VS-10ETS08STRR-M3

VS-10ETS08STRR-M3

DIODE GEN PURP 800V 10A D2PAK

Vishay General Semiconductor - Diodes Division

2463 0.97
- +

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VS-10ETS08STRR-M3

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 800 V 800 V 10A -40°C ~ 150°C 1.1 V @ 10 A
JANTX1N5811

JANTX1N5811

DIODE GEN PURP 150V 3A AXIAL

Microchip Technology

3949 7.13
- +

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JANTX1N5811

Datenblatt

Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 5 µA @ 150 V 150 V 3A -65°C ~ 175°C 875 mV @ 4 A
VS-20TQ035STRRHM3

VS-20TQ035STRRHM3

SCHOTTKY - D2PAK

Vishay General Semiconductor - Diodes Division

2357 0.90
- +

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VS-20TQ035STRRHM3

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1400pF @ 5V, 1MHz - 2.7 mA @ 35 V 35 V 20A -55°C ~ 150°C 570 mV @ 20 A
VS-87HFR160

VS-87HFR160

DIODE GEN PURP 1.6KV 85A DO203AB

Vishay General Semiconductor - Diodes Division

3938 12.61
- +

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VS-87HFR160

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 1600 V 85A -65°C ~ 180°C 1.2 V @ 267 A
VS-6FR100M

VS-6FR100M

DIODE GEN PURP 1KV 6A DO203AA

Vishay General Semiconductor - Diodes Division

2616 8.87
- +

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VS-6FR100M

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 1000 V 6A -65°C ~ 175°C 1.1 V @ 19 A
JANTXV1N4946/TR

JANTXV1N4946/TR

RECTIFIER UFR,FRR

Microchip Technology

3269 13.40
- +

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JANTXV1N4946/TR

Datenblatt

Tape & Reel (TR) Military, MIL-PRF-19500/359 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 12V, 1MHz 250 ns 1 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.3 V @ 1 A
VS-10ETS10STRL-M3

VS-10ETS10STRL-M3

DIODE GEN PURP 1KV 10A D2PAK

Vishay General Semiconductor - Diodes Division

2497 0.97
- +

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Немедленный

VS-10ETS10STRL-M3

Datenblatt

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 1000 V 1000 V 10A -40°C ~ 150°C 1.1 V @ 10 A
VS-20TQ035STRLHM3

VS-20TQ035STRLHM3

SCHOTTKY - D2PAK

Vishay General Semiconductor - Diodes Division

2676 0.90
- +

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Немедленный

VS-20TQ035STRLHM3

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1400pF @ 5V, 1MHz - 2.7 mA @ 35 V 35 V 20A -55°C ~ 150°C 570 mV @ 20 A
JANTXV1N5416US/TR

JANTXV1N5416US/TR

RECTIFIER UFR,FRR

Microchip Technology

3891 12.61
- +

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Tape & Reel (TR) Military, MIL-PRF-19500/411 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 150 ns 1 µA @ 100 V 100 V 3A -65°C ~ 175°C 1.5 V @ 9 A
VS-6FR20M

VS-6FR20M

DIODE GEN PURP 1KV 6A DO203AA

Vishay General Semiconductor - Diodes Division

3426 8.87
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VS-6FR20M

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 1000 V 6A -65°C ~ 175°C 1.1 V @ 19 A
VS-85HFL80S05

VS-85HFL80S05

DIODE GEN PURP 800V 85A DO203AB

Vishay General Semiconductor - Diodes Division

3457 13.41
- +

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VS-85HFL80S05

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 100 µA @ 800 V 800 V 85A -40°C ~ 125°C 1.75 V @ 266.9 A
VS-10ETS10STRR-M3

VS-10ETS10STRR-M3

DIODE GEN PURP 1KV 10A D2PAK

Vishay General Semiconductor - Diodes Division

3008 0.97
- +

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Немедленный

VS-10ETS10STRR-M3

Datenblatt

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 1000 V 1000 V 10A -40°C ~ 150°C 1.1 V @ 10 A
NRVTS30120MFST3G

NRVTS30120MFST3G

120V30A TRENCH SCHOTTKY

onsemi

2667 0.90
- +

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NRVTS30120MFST3G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 1470pF @ 1V, 1MHz - 150 µA @ 120 V 120 V 30A (DC) -55°C ~ 175°C 950 mV @ 30 A
JANTX1N3595US/TR

JANTX1N3595US/TR

SIGNAL/COMPUTER DIODE

Microchip Technology

2310 12.65
- +

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Tape & Reel (TR) Military, MIL-S-19500-241 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - 3 µs 1 nA @ 125 V - 200mA (DC) -65°C ~ 150°C 1 V @ 200 mA
VS-16F120M

VS-16F120M

DIODE GEN PURP 1.2KV 16A DO203AA

Vishay General Semiconductor - Diodes Division

3550 8.87
- +

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VS-16F120M

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 29 ns - 1200 V 16A -65°C ~ 175°C 1.23 V @ 50 A
1N6075/TR

1N6075/TR

RECTIFIER UFR,FRR

Microchip Technology

2819 13.43
- +

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1N6075/TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 1 µA @ 150 V 150 V 850mA -65°C ~ 155°C 2.04 V @ 9.4 A
VS-10ETS12STRR-M3

VS-10ETS12STRR-M3

DIODE GEN PURP 1.2KV 10A D2PAK

Vishay General Semiconductor - Diodes Division

3445 0.97
- +

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Немедленный

VS-10ETS12STRR-M3

Datenblatt

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 1200 V 1200 V 10A -40°C ~ 150°C 1.1 V @ 10 A
V30120S-M3/4W

V30120S-M3/4W

DIODE SCHOTTKY 30A 120V TO-220AB

Vishay General Semiconductor - Diodes Division

2771 0.90
- +

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Немедленный

V30120S-M3/4W

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 120 V 120 V 30A -40°C ~ 150°C 1.28 V @ 30 A
FR30AR02

FR30AR02

DIODE GEN PURP REV 50V 30A DO5

GeneSiC Semiconductor

3517 12.66
- +

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FR30AR02

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 200 ns 25 µA @ 50 V 50 V 30A -40°C ~ 125°C 1.4 V @ 30 A
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