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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
1N5806E3

1N5806E3

RECTIFIER UFR,FRR

Microchip Technology

3895 5.22
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1N5806E3

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 10V, 1MHz 25 ns 1 µA @ 150 V 150 V 1A -65°C ~ 175°C 875 mV @ 1 A
VS-HFA04SD60STRHM3

VS-HFA04SD60STRHM3

DIODE GEN PURP 600V 4A D-PAK

Vishay General Semiconductor - Diodes Division

3002 0.96
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VS-HFA04SD60STRHM3

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 42 ns 3 µA @ 600 V 600 V 4A -55°C ~ 150°C 1.8 V @ 4 A
1N5615

1N5615

DIODE GEN PURP 200V 2A AXIAL

Semtech Corporation

3326 12.41
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1N5615

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 5V, 1MHz 150 ns 500 nA @ 200 V 200 V 2A -65°C ~ 175°C 1.2 V @ 1 A
VS-70HF30

VS-70HF30

DIODE GEN PURP 300V 70A DO203AB

Vishay General Semiconductor - Diodes Division

3625 7.08
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VS-70HF30

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 300 V 70A -65°C ~ 180°C 1.35 V @ 220 A
HSM3100JE3/TR13

HSM3100JE3/TR13

DIODE SCHOTTKY 100V 3A DO214AB

Microchip Technology

2147 0.89
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HSM3100JE3/TR13

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 3A -55°C ~ 175°C 810 mV @ 3 A
DUR75120W

DUR75120W

DIODE GEN PURP 1.2KV 75A TO247AC

Littelfuse Inc.

2752 8.24
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DUR75120W

Datenblatt

Tube DUR RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 650 µA @ 1200 V 1200 V 75A -55°C ~ 150°C 3.5 V @ 60 A
VS-16FL60S05

VS-16FL60S05

DIODE GEN PURP 600V 16A DO203AA

Vishay General Semiconductor - Diodes Division

3861 5.23
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VS-16FL60S05

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 50 µA @ 600 V 600 V 16A -65°C ~ 150°C 1.4 V @ 16 A
VS-HFA04SD60SHM3

VS-HFA04SD60SHM3

DIODE GEN PURP 600V 4A TO252

Vishay General Semiconductor - Diodes Division

2864 0.96
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VS-HFA04SD60SHM3

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 42 ns 3 µA @ 600 V 600 V 4A -65°C ~ 175°C 1.8 V @ 4 A
1N5616

1N5616

DIODE GEN PURP 400V 2A AXIAL

Semtech Corporation

2738 12.41
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1N5616

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 23pF @ 5V, 1MHz 2 µs 500 nA @ 400 V 400 V 2A -65°C ~ 175°C 1.1 V @ 1 A
VS-70HFR30

VS-70HFR30

DIODE GEN PURP 300V 70A DO203AB

Vishay General Semiconductor - Diodes Division

3098 7.08
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VS-70HFR30

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 300 V 70A -65°C ~ 180°C 1.35 V @ 220 A
HSM380GE3/TR13

HSM380GE3/TR13

DIODE SCHOTTKY 80V 3A DO215AB

Microchip Technology

3274 0.89
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HSM380GE3/TR13

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 80 V 80 V 3A -55°C ~ 175°C 810 mV @ 3 A
2833880

2833880

DIODE MODULE W/VARISTOR

Phoenix Contact

3076 8.25
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2833880

Datenblatt

Bulk RoHS - - Active Pluggable into DIN Rail Base - - - - - - -
1N5551

1N5551

DIODE GEN PURP 400V 3A AXIAL

Microchip Technology

3558 5.24
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1N5551

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 400 V 400 V 3A -65°C ~ 175°C 1.2 V @ 9 A
MBRD330T4G

MBRD330T4G

DIODE SCHOTTKY 30V 3A DPAK

onsemi

2310 0.96
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MBRD330T4G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 200 µA @ 30 V 30 V 3A -65°C ~ 150°C 600 mV @ 3 A
1N5617

1N5617

DIODE GEN PURP 400V 2A AXIAL

Semtech Corporation

2560 12.41
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1N5617

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 5V, 1MHz 150 ns 500 nA @ 400 V 400 V 2A -65°C ~ 175°C 1.2 V @ 1 A
1N5186

1N5186

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

2130 7.08
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1N5186

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 150 ns 2 µA @ 100 V 100 V 3A -65°C ~ 175°C 1.5 V @ 9 A
HSM380JE3/TR13

HSM380JE3/TR13

DIODE SCHOTTKY 80V 3A DO214AB

Microchip Technology

2966 0.89
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HSM380JE3/TR13

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 80 V 80 V 3A -55°C ~ 175°C 810 mV @ 3 A
JANTX1N5617US/TR

JANTX1N5617US/TR

RECTIFIER UFR,FRR

Microchip Technology

2443 8.25
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Tape & Reel (TR) Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 35pF @ 12V, 1MHz 150 ns 500 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.6 V @ 3 A
VS-25FR100

VS-25FR100

DIODE GEN PURP 1KV 25A DO203AA

Vishay General Semiconductor - Diodes Division

3315 5.25
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VS-25FR100

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 12 mA @ 1000 V 1000 V 25A -65°C ~ 175°C 1.3 V @ 78 A
APT30DQ100KG

APT30DQ100KG

DIODE GEN PURP 1KV 30A TO220

Microchip Technology

3248 0.96
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APT30DQ100KG

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 295 ns 100 µA @ 1000 V 1000 V 30A -55°C ~ 175°C 3 V @ 30 A
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