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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
VS-18TQ035STRLHM3 SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division	2308	1.22	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	1400pF @ 5V, 1MHz	-	2.5 mA @ 35 V	35 V	18A	-55°C ~ 175°C	600 mV @ 18 A
STTH12R06D DIODE GEN PURP 600V 12A TO220AC STMicroelectronics	2492	1.06	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	45 ns	45 µA @ 600 V	600 V	12A	175°C (Max)	2.9 V @ 12 A
BYT51G-TAP DIODE AVALANCHE 400V 1.5A SOD57 Vishay General Semiconductor - Diodes Division	3539	0.27	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	4 µs	1 µA @ 400 V	400 V	1.5A	-55°C ~ 175°C	1.1 V @ 1 A
GIB1404HE3_A/I DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division	2217	0.83	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	5 µA @ 200 V	200 V	8A	-65°C ~ 150°C	975 mV @ 8 A
DSA10IM100UC-TUB POWER DIODE DISCRETES-SCHOTTKY T IXYS	2470	1.29	- + Добавить Немедленный		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	68pF @ 24V, 1MHz	-	200 µA @ 100 V	100 V	10A	-55°C ~ 175°C	890 mV @ 10 A
VS-18TQ035STRRHM3 SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division	3699	1.22	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	1400pF @ 5V, 1MHz	-	2.5 mA @ 35 V	35 V	18A	-55°C ~ 175°C	600 mV @ 18 A
VS-30ETH06STRR-M3 DIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division	3085	1.06	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	50 µA @ 600 V	600 V	30A	-65°C ~ 175°C	2.6 V @ 30 A
BYT52D-TAP DIODE AVALANCHE 200V 1.4A SOD57 Vishay General Semiconductor - Diodes Division	2328	0.27	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	200 ns	5 µA @ 200 V	200 V	1.4A	-55°C ~ 175°C	1.3 V @ 1 A
GIB1401HE3_A/P DIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division	2384	0.83	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	5 µA @ 50 V	50 V	8A	-65°C ~ 150°C	975 mV @ 8 A
DSA15IM45UC-TUB POWER DIODE DISCRETES-SCHOTTKY T IXYS	2934	1.29	- + Добавить Немедленный		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	227pF @ 4V, 1MHz	-	250 µA @ 45 V	45 V	15A	-55°C ~ 175°C	750 mV @ 15 A
VS-10ETS08FP-M3 DIODE GEN PURP 800V 10A TO220-2 Vishay General Semiconductor - Diodes Division	3521	1.23	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	50 µA @ 800 V	800 V	10A	-40°C ~ 150°C	1.1 V @ 10 A
JANTX1N4454-1 ZENER DIODE Microchip Technology	2804	1.06	- + Добавить Немедленный		Bulk	Military, MIL-PRF-19500/144	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 ns	100 nA @ 50 V	50 V	200mA	-65°C ~ 175°C	1 V @ 10 mA
BYT53A-TAP DIODE AVALANCHE 50V 1.9A SOD57 Vishay General Semiconductor - Diodes Division	3456	0.27	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	50 ns	5 µA @ 50 V	50 V	1.9A	-55°C ~ 175°C	1.1 V @ 1 A
GIB1402HE3_A/P DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division	2867	0.83	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	5 µA @ 100 V	100 V	8A	-65°C ~ 150°C	975 mV @ 8 A
DSS6-0045AS-TUB POWER DIODE DISCRETES-SCHOTTKY T IXYS	3966	1.29	- + Добавить Немедленный		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	497pF @ 5V, 1MHz	-	250 µA @ 45 V	45 V	6A	-55°C ~ 175°C	630 mV @ 6 A
RHRP30120-F102 DIODE GEN PURP 1.2KV 30A TO220-2 onsemi	3228	1.23	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	85 ns	250 µA @ 1200 V	1200 V	30A	-65°C ~ 175°C	3.2 V @ 30 A
NRVTS30100MFST3G 100V30A TRENCH SCHOTTKY onsemi	2244	1.07	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	2540pF @ 1V, 1MHz	-	100 µA @ 100 V	100 V	30A (DC)	-55°C ~ 175°C	760 mV @ 30 A
BYT54D-TAP DIODE AVALANCHE 200V 1.25A SOD57 Vishay General Semiconductor - Diodes Division	3535	0.27	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	100 ns	5 µA @ 200 V	200 V	1.25A	-55°C ~ 175°C	1.5 V @ 1 A
GIB1403HE3_A/P DIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division	2944	0.83	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	5 µA @ 150 V	150 V	8A	-65°C ~ 150°C	975 mV @ 8 A
SF2008PT C0G DIODE GEN PURP 600V 20A TO247AD Taiwan Semiconductor Corporation	2117	1.29	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	20A	-55°C ~ 150°C	1.9 V @ 20 A