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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
ES1JL RUG DIODE GEN PURP 600V 1A SUB SMA Taiwan Semiconductor Corporation	2256	0.26	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	8pF @ 1V, 1MHz	35 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.7 V @ 1 A
AS3PD-M3/87A DIODE AVALANCHE 200V 2.1A TO277A Vishay General Semiconductor - Diodes Division	3075	0.29	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	37pF @ 4V, 1MHz	1.2 µs	10 µA @ 200 V	200 V	2.1A (DC)	-55°C ~ 175°C	920 mV @ 1.5 A
SDURF1520 DIODE GEN PURP 200V 15A ITO220AC SMC Diode Solutions	2609	0.31	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 200 V	200 V	15A	-55°C ~ 150°C	1.05 V @ 15 A
SDT5H100P5-13D DIODE SCHOTTKY 100V 5A POWERDI 5 Diodes Incorporated	3817	0.17	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	100 µA @ 100 V	100 V	5A	-55°C ~ 150°C	620 mV @ 5 A
V8P20-M3/87A DIODE SCHOTTKY 200V 2.2A TO277A Vishay General Semiconductor - Diodes Division	3258	0.30	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	250 µA @ 200 V	200 V	2.2A	-40°C ~ 150°C	1.4 V @ 8 A
UF3002-HF DIODE GEN PURP 100V 3A DO27 Comchip Technology	2839	0.16	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	3A	-55°C ~ 125°C	1 V @ 3 A
MUR420-M3/73 DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division	2422	0.26	- + Добавить Немедленный		Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	5 µA @ 200 V	200 V	4A	-65°C ~ 175°C	890 mV @ 4 A
AS3PG-M3/87A DIODE AVALANCHE 400V 2.1A TO277A Vishay General Semiconductor - Diodes Division	3591	0.29	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	37pF @ 4V, 1MHz	1.2 µs	10 µA @ 400 V	400 V	2.1A (DC)	-55°C ~ 175°C	920 mV @ 1.5 A
MUR440-M3/54 DIODE GEN PURP 400V 4A DO201AD Vishay General Semiconductor - Diodes Division	2690	0.31	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 400 V	400 V	4A	-65°C ~ 175°C	1.28 V @ 4 A
SK32-TP DIODE SCHOTTKY 20V 3A DO214AB Micro Commercial Co	2675	0.17	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 20 V	20 V	3A	-55°C ~ 150°C	500 mV @ 3 A
HS3A DIODE GEN PURP 50V 3A DO214AB Taiwan Semiconductor Corporation	3307	0.30	- + Добавить Немедленный		Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	80pF @ 4V, 1MHz	50 ns	10 µA @ 50 V	50 V	3A	-55°C ~ 150°C	1 V @ 3 A
UF3003-G DIODE GEN PURP 200V 3A DO201AA Comchip Technology	2508	0.16	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 125°C	1 V @ 3 A
SF48G R0G DIODE GEN PURP 600V 4A DO201AD Taiwan Semiconductor Corporation	2621	0.26	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	80pF @ 4V, 1MHz	35 ns	5 µA @ 600 V	600 V	4A	-55°C ~ 150°C	1.7 V @ 4 A
AS3PJ-M3/87A DIODE AVALANCHE 600V 2.1A TO277A Vishay General Semiconductor - Diodes Division	3580	0.29	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	37pF @ 4V, 1MHz	1.2 µs	10 µA @ 600 V	600 V	2.1A (DC)	-55°C ~ 175°C	920 mV @ 1.5 A
MUR460-M3/54 DIODE GEN PURP 600V 4A DO201AD Vishay General Semiconductor - Diodes Division	2036	0.31	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 600 V	600 V	4A	-65°C ~ 175°C	1.28 V @ 4 A
SK35-TP DIODE SCHOTTKY 50V 3A DO214AB Micro Commercial Co	3443	0.17	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 50 V	50 V	3A	-55°C ~ 150°C	750 mV @ 3 A
AM01ZV0 DIODE GEN PURP 200V 1A AXIAL Sanken	3104	0.30	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 200 V	200 V	1A	-40°C ~ 150°C	980 mV @ 1 A
UF3003-HF DIODE GEN PURP 200V 3A DO201AA Comchip Technology	3193	0.16	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	50 ns	5 µA @ 200 V	200 V	3A	-55°C ~ 125°C	1 V @ 3 A
HS5D V6G DIODE GEN PURP 200V 5A DO214AB Taiwan Semiconductor Corporation	2650	0.26	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	80pF @ 4V, 1MHz	50 ns	10 µA @ 200 V	200 V	5A	-55°C ~ 150°C	-
AS3PJ-M3/86A DIODE AVALANCHE 600V 2.1A TO277A Vishay General Semiconductor - Diodes Division	3674	0.29	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	37pF @ 4V, 1MHz	1.2 µs	10 µA @ 600 V	600 V	2.1A (DC)	-55°C ~ 175°C	920 mV @ 1.5 A