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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
RS2M R5G

RS2M R5G

DIODE GEN PURP 1KV 2A DO214AA

Taiwan Semiconductor Corporation

3830 0.53
- +

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RS2M R5G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V 1000 V 2A -55°C ~ 150°C 1.3 V @ 2 A
CMR1U-06 BK PBFREE

CMR1U-06 BK PBFREE

DIODE GEN PURP 600V 1A SMB

Central Semiconductor Corp

3294 0.25
- +

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CMR1U-06 BK PBFREE

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 75 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.25 V @ 1 A
BYV15-TR

BYV15-TR

DIODE AVALANCHE 800V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

3891 0.29
- +

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BYV15-TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 300 ns 5 µA @ 800 V 800 V 1.5A -55°C ~ 175°C 1.5 V @ 1 A
SF31G-TP

SF31G-TP

DIODE GPP HE 3A DO-201AD

Micro Commercial Co

3575 0.13
- +

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SF31G-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns - 50 V 3A -65°C ~ 150°C -
S12KC V6G

S12KC V6G

DIODE GEN PURP 800V 12A DO214AB

Taiwan Semiconductor Corporation

2202 0.24
- +

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S12KC V6G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 800 V 800 V 12A -55°C ~ 150°C -
ES2C-M3/5BT

ES2C-M3/5BT

DIODE GEN PURP 150V 2A DO214AA

Vishay General Semiconductor - Diodes Division

2282 0.14
- +

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ES2C-M3/5BT

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 18pF @ 4V, 1MHz 30 ns 10 µA @ 150 V 150 V 2A -55°C ~ 150°C 900 mV @ 2 A
SK515C V6G

SK515C V6G

DIODE SCHOTTKY 5A 150V DO-214AB

Taiwan Semiconductor Corporation

2805 0.20
- +

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SK515C V6G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 150 V 150 V 5A -55°C ~ 150°C 950 mV @ 5 A
BYT51A-TAP

BYT51A-TAP

DIODE AVALANCHE 50V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

3181 0.25
- +

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BYT51A-TAP

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 50 V 50 V 1.5A -55°C ~ 175°C 1.1 V @ 1 A
BYW35-TR

BYW35-TR

DIODE AVALANCHE 500V 2A SOD57

Vishay General Semiconductor - Diodes Division

3489 0.29
- +

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BYW35-TR

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole - 200 ns 5 µA @ 500 V 500 V 2A -55°C ~ 175°C 1.1 V @ 1 A
SF32G-TP

SF32G-TP

DIODE GPP HE 3A DO-201AD

Micro Commercial Co

3904 0.13
- +

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SF32G-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 50pF @ 4V, 1MHz 35 ns - 100 V 3A -65°C ~ 150°C -
S12MC V6G

S12MC V6G

DIODE GEN PURP 12A DO214AB

Taiwan Semiconductor Corporation

3050 0.24
- +

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S12MC V6G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 1000 V - 12A -55°C ~ 150°C -
ES2D-M3/5BT

ES2D-M3/5BT

DIODE GEN PURP 200V 2A DO214AA

Vishay General Semiconductor - Diodes Division

3540 0.14
- +

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ES2D-M3/5BT

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 18pF @ 4V, 1MHz 30 ns 10 µA @ 200 V 200 V 2A -55°C ~ 150°C 900 mV @ 2 A
SK520C V6G

SK520C V6G

DIODE SCHOTTKY 5A 200V DO-214AB

Taiwan Semiconductor Corporation

2550 0.20
- +

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SK520C V6G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 300 µA @ 200 V 200 V 5A -55°C ~ 150°C 950 mV @ 5 A
BYT51B-TAP

BYT51B-TAP

DIODE AVALANCHE 100V 1.5A SOD57

Vishay General Semiconductor - Diodes Division

2128 0.25
- +

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Немедленный

BYT51B-TAP

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 100 V 100 V 1.5A -55°C ~ 175°C 1.1 V @ 1 A
BYX86TR

BYX86TR

DIODE AVALANCHE 1KV 2A SOD57

Vishay General Semiconductor - Diodes Division

2991 0.29
- +

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BYX86TR

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole 20pF @ 4V, 1MHz 4 µs 1 µA @ 1000 V 1000 V 2A -55°C ~ 175°C 1 V @ 1 A
SF36G-TP

SF36G-TP

DIODE GPP HE 3A DO-201AD

Micro Commercial Co

2571 0.13
- +

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Немедленный

SF36G-TP

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz 35 ns - 400 V 3A -65°C ~ 150°C -
1N5061TAP

1N5061TAP

DIODE AVALANCHE 600V 2A SOD57

Vishay General Semiconductor - Diodes Division

3880 0.24
- +

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Немедленный

1N5061TAP

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole 40pF @ 0V, 1MHz 4 µs 1 µA @ 600 V 600 V 2A -55°C ~ 175°C 1.15 V @ 2.5 A
ES2A-M3/52T

ES2A-M3/52T

DIODE GEN PURP 50V 2A DO214AA

Vishay General Semiconductor - Diodes Division

3690 0.14
- +

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Немедленный

ES2A-M3/52T

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 18pF @ 4V, 1MHz 30 ns 10 µA @ 50 V 50 V 2A -55°C ~ 150°C 900 mV @ 2 A
SS54C-HF

SS54C-HF

DIODE SCHOTTKY 5A 40V SMC

Comchip Technology

2810 0.20
- +

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Немедленный

SS54C-HF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 600pF @ 4V, 1MHz - 1 mA @ 40 V 40 V 5A -55°C ~ 150°C 550 mV @ 5 A
BYW53-TAP

BYW53-TAP

DIODE AVALANCHE 400V 2A SOD57

Vishay General Semiconductor - Diodes Division

2980 0.25
- +

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Немедленный

BYW53-TAP

Datenblatt

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 400 V 400 V 2A -55°C ~ 175°C 1 V @ 1 A
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