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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SB2J-M3/5BT DIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division	3301	0.12	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	16pF @ 4V, 1MHz	2 µs	1 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.15 V @ 2 A
SF25G-TP DIODE GPP SUPER FAST 2A DO-15 Micro Commercial Co	3354	0.06	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	35 ns	-	300 V	2A	-65°C ~ 150°C	-
RS1J M2G DIODE GEN PURP 600V 1A DO214AC Taiwan Semiconductor Corporation	2868	0.06	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	250 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
UF4001 DIODE GEN PURP 50V 1A DO41 onsemi	2277	0.10	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	50 ns	10 µA @ 50 V	50 V	1A	-65°C ~ 150°C	1 V @ 1 A
RGL34JHE3/98 DIODE GEN PURP 600V 500MA DO213 Vishay General Semiconductor - Diodes Division	2782	0.15	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	SUPERECTIFIER®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	250 ns	5 µA @ 600 V	600 V	500mA	-65°C ~ 175°C	1.3 V @ 500 mA
1N5402G-T DIODE GEN PURP 200V 3A DO201AD Diodes Incorporated	3077	0.12	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	2 µs	5 µA @ 200 V	200 V	3A	-65°C ~ 150°C	1.1 V @ 3 A
SB2K-M3/5BT DIODE GEN PURP 800V 2A DO214AA Vishay General Semiconductor - Diodes Division	3040	0.12	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	16pF @ 4V, 1MHz	2 µs	1 µA @ 800 V	800 V	2A	-55°C ~ 150°C	1.15 V @ 2 A
SF26G-TP DIODE GPP SUPER FAST 2A DO-15 Micro Commercial Co	3970	0.06	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	35 ns	-	400 V	2A	-65°C ~ 150°C	-
RS1K M2G DIODE GEN PURP 800V 1A DO214AC Taiwan Semiconductor Corporation	2728	0.06	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	500 ns	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
SFT15G R0G DIODE GEN PURP 300V 1A TS-1 Taiwan Semiconductor Corporation	3732	0.10	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	35 ns	5 µA @ 300 V	300 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
BYG10D-M3/TR3 DIODE AVALANCHE 200V 1.5A Vishay General Semiconductor - Diodes Division	2474	0.15	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	-	4 µs	1 µA @ 200 V	200 V	1.5A	-55°C ~ 150°C	1.15 V @ 1.5 A
1N5407G-T DIODE GEN PURP 800V 3A DO201AD Diodes Incorporated	3176	0.12	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	2 µs	5 µA @ 800 V	800 V	3A	-65°C ~ 150°C	1.1 V @ 3 A
SB2M-M3/5BT DIODE GEN PURP 1KV 2A DO214AA Vishay General Semiconductor - Diodes Division	2456	0.12	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	16pF @ 4V, 1MHz	2 µs	1 µA @ 1000 V	1000 V	2A	-55°C ~ 150°C	1.15 V @ 2 A
SF28G-TP DIODE GPP SUPER FAST 2A DO-15 Micro Commercial Co	2753	0.06	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	30pF @ 4V, 1MHz	35 ns	-	600 V	2A	-65°C ~ 150°C	-
RS1M M2G DIODE GEN PURP 1A DO214AC Taiwan Semiconductor Corporation	2397	0.06	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	500 ns	5 µA @ 1000 V	-	1A	-55°C ~ 150°C	1.3 V @ 1 A
SFT16G R0G DIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation	3727	0.10	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	10pF @ 4V, 1MHz	35 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.3 V @ 1 A
BYG10G-M3/TR3 DIODE AVALANCHE 400V 1.5A Vishay General Semiconductor - Diodes Division	3444	0.15	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	-	4 µs	1 µA @ 400 V	400 V	1.5A	-55°C ~ 150°C	1.15 V @ 1.5 A
FR306GP-TP DIODE GP 800V 3A DO201AD Micro Commercial Co	2039	0.12	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	50pF @ 4V, 1MHz	500 ns	-	800 V	3A	-55°C ~ 150°C	-
CDBB140LR-HF DIODE SCHOTTKY 40V 1A DO214AA Comchip Technology	3862	0.12	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	120pF @ 4V, 1MHz	-	500 µA @ 40 V	40 V	1A	-50°C ~ 150°C	450 mV @ 1 A
B0540W-TP 0.5A,40V,SCHOTTKY,SOD-123 PACKAG Micro Commercial Co	3528	0.35	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	30pF @ 4V, 1MHz	-	80 µA @ 40 V	40 V	500mA	-55°C ~ 150°C	550 mV @ 500 mA