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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SS220BF-HF

SS220BF-HF

DIODE SCHOTTKY 2A 200V SMBF

Comchip Technology

2347 0.09
- +

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SS220BF-HF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 110pF @ 4V, 1MHz - 300 µA @ 200 V 200 V 2A -55°C ~ 150°C 950 mV @ 2 A
ESH1C M2G

ESH1C M2G

DIODE GEN PURP 150V 1A DO214AC

Taiwan Semiconductor Corporation

3383 0.08
- +

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Немедленный

ESH1C M2G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 16pF @ 4V, 1MHz 15 ns 1 µA @ 150 V 150 V 1A -55°C ~ 175°C 950 mV @ 1 A
ES3CB-HF

ES3CB-HF

RECTIFIER SUPER FAST RECOVERY 15

Comchip Technology

3874 0.12
- +

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ES3CB-HF

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 3A -55°C ~ 150°C 1 V @ 3 A
NTE6050

NTE6050

R-100 PRV 70A CATH CASE

NTE Electronics, Inc

3603 9.70
- +

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NTE6050

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 2 mA @ 100 V 100 V 70A -65°C ~ 190°C 1.25 V @ 20 mA
SE10PDHM3/85A

SE10PDHM3/85A

DIODE GEN PURP 200V 1A DO220AA

Vishay General Semiconductor - Diodes Division

3220 0.10
- +

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SE10PDHM3/85A

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 780 ns 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.05 V @ 1 A
MMBD6050-HE3-08

MMBD6050-HE3-08

DIODE GEN PURP 70V 200MA SOT23

Vishay General Semiconductor - Diodes Division

2478 0.03
- +

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Немедленный

MMBD6050-HE3-08

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - 4 ns 100 nA @ 50 V 70 V 200mA 150°C (Max) 1.1 V @ 100 mA
SB007-03C-TB-E

SB007-03C-TB-E

DIODE SCHOTTKY 30V 70MA 3CP

onsemi

8202 0.43
- +

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SB007-03C-TB-E

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 3pF @ 10V, 1MHz 10 ns 5 µA @ 15 V 30 V 70mA -55°C ~ 125°C 550 mV @ 70 mA
ESH1D M2G

ESH1D M2G

DIODE GEN PURP 200V 1A DO214AC

Taiwan Semiconductor Corporation

2729 0.08
- +

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Немедленный

ESH1D M2G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 16pF @ 4V, 1MHz 15 ns 1 µA @ 200 V 200 V 1A -55°C ~ 175°C 900 mV @ 1 A
ES3EB-HF

ES3EB-HF

RECTIFIER SUPER FAST RECOVERY 30

Comchip Technology

2212 0.12
- +

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Немедленный

ES3EB-HF

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 35 ns 5 µA @ 300 V 300 V 3A -55°C ~ 150°C 1.25 V @ 3 A
DSDI60-14A

DSDI60-14A

DIODE GEN PURP 1.4KV 63A TO247AD

IXYS

2872 9.80
- +

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Немедленный

DSDI60-14A

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 300 ns 2 mA @ 1400 V 1400 V 63A -40°C ~ 150°C 4.1 V @ 70 A
SE10PGHM3/85A

SE10PGHM3/85A

DIODE GEN PURP 400V 1A DO220AA

Vishay General Semiconductor - Diodes Division

3724 0.10
- +

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Немедленный

SE10PGHM3/85A

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 780 ns 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.05 V @ 1 A
MMBD914-HE3-08

MMBD914-HE3-08

DIODE GEN PURP 100V 200MA SOT23

Vishay General Semiconductor - Diodes Division

2005 0.03
- +

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Немедленный

MMBD914-HE3-08

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 100 V 200mA 150°C (Max) 1 V @ 10 mA
FR205G R0G

FR205G R0G

DIODE GEN PURP 600V 2A DO204AC

Taiwan Semiconductor Corporation

2851 0.09
- +

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Немедленный

FR205G R0G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.3 V @ 2 A
RGP10D

RGP10D

DIODE GEN PURP 200V 1A DO204AL

onsemi

2242 0.08
- +

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Немедленный

RGP10D

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 1 A
ES3AB-HF

ES3AB-HF

RECTIFIER SUPER FAST RECOVERY 50

Comchip Technology

2654 0.12
- +

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Немедленный

ES3AB-HF

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 35 ns 5 µA @ 50 V 50 V 3A -55°C ~ 150°C 1 V @ 3 A
NTE5953

NTE5953

R-600PRV 15A ANODE CASE

NTE Electronics, Inc

3681 10.05
- +

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Немедленный

NTE5953

Datenblatt

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 10 mA @ 600 V 600 V 15A -65°C ~ 175°C 1.5 V @ 15 A
SE10PJHM3/85A

SE10PJHM3/85A

DIODE GEN PURP 600V 1A DO220AA

Vishay General Semiconductor - Diodes Division

2547 0.10
- +

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Немедленный

SE10PJHM3/85A

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 780 ns 5 µA @ 600 V 600 V 1A -55°C ~ 175°C 1.05 V @ 1 A
1N4001G

1N4001G

DIODE GEN PURP 50V 1A DO41

SMC Diode Solutions

2772 0.03
- +

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Немедленный

1N4001G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 8pF @ 4V, 1MHz - 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1 V @ 1 A
FR206G R0G

FR206G R0G

DIODE GEN PURP 800V 2A DO204AC

Taiwan Semiconductor Corporation

2220 0.09
- +

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Немедленный

FR206G R0G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 2A -55°C ~ 150°C 1.3 V @ 2 A
NRVS1DFL

NRVS1DFL

GENERAL PURP RECTIFIER

onsemi

2782 0.08
- +

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Немедленный

NRVS1DFL

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 4V, 1MHz 2 µs 1 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.1 V @ 1 A
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