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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SCS308AMC DIODES SILICON CARBIDE Rohm Semiconductor	2373	2.37	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	400pF @ 1V, 1MHz	0 ns	40 µA @ 650 V	650 V	8A (DC)	175°C (Max)	1.5 V @ 8 A
1N4006B-G DIODE GEN PURP 800V 1A DO41 Comchip Technology	2032	0.04	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	-	5 µA @ 800 V	800 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
SF3004PT C0G DIODE GEN PURP 200V 30A TO247AD Taiwan Semiconductor Corporation	2039	3.15	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	30A	-55°C ~ 150°C	950 mV @ 15 A
DSEP90-12AZ-TUB POWER DIODE DISCRETES-FRED TO-26 IXYS	3788	10.32	- + Добавить Немедленный		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	48pF @ 600V, 1MHz	85 ns	1 mA @ 1200 V	1200 V	90A	-55°C ~ 175°C	2.69 V @ 90 A
S1FLD-M-08 DIODE GP 200V 700MA DO219AB Vishay General Semiconductor - Diodes Division	2492	0.05	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	1.8 µs	10 µA @ 200 V	200 V	700mA	-55°C ~ 150°C	1.1 V @ 1 A
S1FLD-GS18 DIODE GP 200V 700MA DO219AB Vishay General Semiconductor - Diodes Division	2361	0.05	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	1.8 µs	10 µA @ 200 V	200 V	700mA	-55°C ~ 150°C	1.1 V @ 1 A
VS-HFA16TB120S-M3 DIODE GEN PURP 1.2KV 16A D2PAK Vishay General Semiconductor - Diodes Division	2331	2.42	- + Добавить Немедленный	Datenblatt	Tube	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	135 ns	20 µA @ 1200 V	1200 V	16A (DC)	-55°C ~ 150°C	3.93 V @ 32 A
BAS19 RFG DIODE GEN PURP 100V 200MA SOT23 Taiwan Semiconductor Corporation	2570	0.04	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 0V, 1MHz	50 ns	100 nA @ 100 V	100 V	200mA	-65°C ~ 150°C	1.25 V @ 200 mA
GP3D010A065C DIODE SILICON CARBIDE SemiQ	2287	3.15	- + Добавить Немедленный		Tube		RoHS	-	-	Active	-	-	-	-	-	-	-	-
S1FLG-M-08 DIODE GP 400V 700MA DO219AB Vishay General Semiconductor - Diodes Division	3859	0.05	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	1.8 µs	10 µA @ 400 V	400 V	700mA	-55°C ~ 150°C	1.1 V @ 1 A
S1FLG-GS18 DIODE GP 400V 700MA DO219AB Vishay General Semiconductor - Diodes Division	3583	0.05	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	1.8 µs	10 µA @ 400 V	400 V	700mA	-55°C ~ 150°C	1.1 V @ 1 A
STTH810FP DIODE GEN PURP 1KV 8A TO220FP STMicroelectronics	2340	2.43	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	85 ns	5 µA @ 1000 V	1000 V	8A	175°C (Max)	2 V @ 8 A
BAS20 RFG DIODE GEN PURP 150V 200MA SOT23 Taiwan Semiconductor Corporation	2950	0.04	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 0V, 1MHz	50 ns	100 nA @ 150 V	150 V	200mA	-65°C ~ 150°C	1.25 V @ 200 mA
DHG30I600PA DIODE GEN PURP 600V 30A TO220AC IXYS	2118	3.18	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	50 µA @ 600 V	600 V	30A	-55°C ~ 150°C	2.37 V @ 30 A
S1FLJ-M-08 DIODE GP 600V 700MA DO219AB Vishay General Semiconductor - Diodes Division	3730	0.05	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	1.8 µs	10 µA @ 600 V	600 V	700mA	-55°C ~ 150°C	1.1 V @ 1 A
S1FLJ-GS18 DIODE GEN PURP 600V 1A DO219AB Vishay General Semiconductor - Diodes Division	3800	0.05	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	4pF @ 4V, 1MHz	1.8 µs	10 µA @ 600 V	600 V	700mA	-55°C ~ 150°C	1.1 V @ 1 A
D6015LTP DIODE GEN PURP 600V 9.5A TO220 Littelfuse Inc.	3809	2.44	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	4 µs	10 µA @ 600 V	600 V	9.5A	-40°C ~ 125°C	1.6 V @ 9.5 A
BAS21 RFG DIODE GEN PURP 250V 200MA SOT23 Taiwan Semiconductor Corporation	3646	0.04	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Surface Mount	5pF @ 1V, 1MHz	50 ns	100 nA @ 200 V	250 V	200mA	-55°C ~ 150°C	1.25 V @ 200 mA
RHRU501200 RECTIFIER DIODE, AVALANCHE Rochester Electronics, LLC	2803	3.20	- + Добавить Немедленный		Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
BAQ133-GS18 DIODE GEN PURP 30V 200MA SOD80 Vishay General Semiconductor - Diodes Division	3076	0.05	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Last Time Buy	Surface Mount	3pF @ 0V, 1MHz	-	1 nA @ 15 V	30 V	200mA	-65°C ~ 175°C	1 V @ 100 mA