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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
MBR1020VL_R1_00001

MBR1020VL_R1_00001

SOD-123FL, SKY

Panjit International Inc.

3434 0.51
- +

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MBR1020VL_R1_00001

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 600 µA @ 20 V 20 V 1A -55°C ~ 125°C 340 mV @ 1 A
SSB44-E3/5BT

SSB44-E3/5BT

DIODE SCHOTTKY 40V 4A DO214AA

Vishay General Semiconductor - Diodes Division

2133 0.46
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SSB44-E3/5BT

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 40 V 40 V 4A -65°C ~ 150°C 490 mV @ 4 A
1N4947GP-E3/54

1N4947GP-E3/54

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2362 0.53
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1N4947GP-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 1 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.3 V @ 1 A
STPS3H100AFY

STPS3H100AFY

DIODE SCHOTTKY 100V 3A SOD128

STMicroelectronics

3412 0.57
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STPS3H100AFY

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, ECOPACK®1 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1.5 µA @ 100 V 100 V 3A -40°C ~ 175°C 760 mV @ 3 A
RHRP860-F102

RHRP860-F102

DIODE GEN PURP 600V 8A TO220-2

onsemi

3975 1.19
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RHRP860-F102

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 100 µA @ 600 V 600 V 8A -65°C ~ 175°C 2.1 V @ 8 A
STTH60P03SW

STTH60P03SW

DIODE GEN PURP 300V 60A TO247-3

STMicroelectronics

3937 3.96
- +

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STTH60P03SW

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 300 V 300 V 60A 175°C (Max) 1.5 V @ 30 A
SBM260VAL_R1_00001

SBM260VAL_R1_00001

SOD-123FL, SKY

Panjit International Inc.

3638 0.51
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SBM260VAL_R1_00001

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 100pF @ 4V, 1MHz - 50 µA @ 60 V 60 V 2A -55°C ~ 150°C 540 mV @ 2 A
SSA34HE3_A/H

SSA34HE3_A/H

DIODE SCHOTTKY 40V 3A DO214AC

Vishay General Semiconductor - Diodes Division

2266 0.53
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SSA34HE3_A/H

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 40 V 40 V 3A -65°C ~ 150°C 490 mV @ 3 A
RS1GL R3G

RS1GL R3G

DIODE GEN PURP 400V 800MA SUBSMA

Taiwan Semiconductor Corporation

2808 0.49
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RS1GL R3G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 800mA -55°C ~ 150°C 1.3 V @ 800 mA
SDT5H100LP5-7

SDT5H100LP5-7

DIODE SCHOTTKY 100V 5A POWERDI5

Diodes Incorporated

2413 0.54
- +

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SDT5H100LP5-7

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 3.5 µA @ 100 V 100 V 5A -55°C ~ 150°C 660 mV @ 5 A
FES8JT-E3/45

FES8JT-E3/45

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division

3402 1.21
- +

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FES8JT-E3/45

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.5 V @ 8 A
VS-35APF06LHM3

VS-35APF06LHM3

DIODES - TO-247-E3

Vishay General Semiconductor - Diodes Division

3269 3.99
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VS-35APF06LHM3

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 160 ns 100 µA @ 600 V 600 V 35A -40°C ~ 150°C 1.46 V @ 35 A
PG2010_R2_00001

PG2010_R2_00001

GLASS PASSIVATED JUNCTION PLASTI

Panjit International Inc.

3107 0.51
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Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 4V, 1MHz - 1 µA @ 1000 V 1000 V 2A -55°C ~ 150°C 1.1 V @ 2 A
BYG10Y-E3/TR3

BYG10Y-E3/TR3

DIODE AVALANCHE 1.6KV 1.5A

Vishay General Semiconductor - Diodes Division

3725 0.48
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BYG10Y-E3/TR3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount - 4 µs 1 µA @ 1600 V 1600 V 1.5A -55°C ~ 150°C 1.15 V @ 1.5 A
RSFAL R3G

RSFAL R3G

DIODE GEN PURP 50V 500MA SUB SMA

Taiwan Semiconductor Corporation

3307 0.49
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RSFAL R3G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 500mA -55°C ~ 150°C 1.3 V @ 500 mA
STPS3H100AF

STPS3H100AF

DIODE SCHOTTKY 100V 3A SOD128

STMicroelectronics

3358 0.57
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STPS3H100AF

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1.5 µA @ 100 V 100 V 3A -40°C ~ 175°C 760 mV @ 3 A
V10150S-E3/4W

V10150S-E3/4W

DIODE SCHOTTKY 150V 10A TO220AB

Vishay General Semiconductor - Diodes Division

3702 1.21
- +

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V10150S-E3/4W

Datenblatt

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 150 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.2 V @ 10 A
VS-35EPF06LHM3

VS-35EPF06LHM3

DIODES - TO-247-E3

Vishay General Semiconductor - Diodes Division

2869 3.99
- +

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VS-35EPF06LHM3

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 160 ns 100 µA @ 600 V 600 V 35A -40°C ~ 150°C 1.46 V @ 35 A
US1001FL_R1_00001

US1001FL_R1_00001

SMALL SURFACE MOUNT FAST DIODES

Panjit International Inc.

2272 0.51
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Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 50 ns 1 µA @ 100 V 100 V 1A -55°C ~ 150°C 1 V @ 1 A
ES1PD-M3/84A

ES1PD-M3/84A

DIODE GEN PURP 200V 1A DO220AA

Vishay General Semiconductor - Diodes Division

2752 0.47
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ES1PD-M3/84A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 920 mV @ 1 A
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