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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
RB070MM-30TFTR

RB070MM-30TFTR

RB070MM-30TF IS THE HIGH RELIABI

Rohm Semiconductor

2977 0.52
- +

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RB070MM-30TFTR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 50 µA @ 30 V 30 V 1.5A 150°C (Max) 490 mV @ 1.5 A
1N4150W-E3-18

1N4150W-E3-18

DIODE GEN PURP 50V 200MA SOD123

Vishay General Semiconductor - Diodes Division

2326 0.27
- +

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1N4150W-E3-18

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 2.5pF @ 0V, 1MHz 4 ns 100 nA @ 50 V 50 V 200mA -55°C ~ 150°C 1 V @ 200 mA
BAS16D-E3-08

BAS16D-E3-08

DIODE GEN PURP 75V 250MA SOD123

Vishay General Semiconductor - Diodes Division

3720 0.27
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BAS16D-E3-08

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 6 ns 1 µA @ 75 V 75 V 250mA -55°C ~ 150°C 1.25 V @ 150 mA
RGP02-14E-E3/54

RGP02-14E-E3/54

DIODE GEN PURP 1.4KV 500MA DO204

Vishay General Semiconductor - Diodes Division

3624 0.69
- +

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RGP02-14E-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 300 ns 5 µA @ 1400 V 1400 V 500mA -65°C ~ 175°C 1.8 V @ 100 mA
BYG22DHE3_A/H

BYG22DHE3_A/H

DIODE AVALANCHE 200V 2A DO214AC

Vishay General Semiconductor - Diodes Division

2959 0.53
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BYG22DHE3_A/H

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount - 25 ns 1 µA @ 200 V 200 V 2A -55°C ~ 150°C 1.1 V @ 2 A
S2G_R1_00001

S2G_R1_00001

SMB, GENERAL

Panjit International Inc.

535 0.34
- +

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S2G_R1_00001

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz - 1 µA @ 400 V 400 V 2A -55°C ~ 150°C 1.1 V @ 2 A
NRVB230LSFT1G

NRVB230LSFT1G

DIODE SCHOTTKY 30V 2A SOD123FL

onsemi

3925 0.52
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NRVB230LSFT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 1 mA @ 30 V 30 V 2A -55°C ~ 125°C 430 mV @ 2 A
1N4448W-E3-18

1N4448W-E3-18

DIODE GEN PURP 75V 150MA SOD123

Vishay General Semiconductor - Diodes Division

2745 0.27
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1N4448W-E3-18

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - 4 ns 5 µA @ 75 V 75 V 150mA -55°C ~ 150°C 720 mV @ 5 mA
BAS40LT1G

BAS40LT1G

DIODE SCHOTTKY 40V 120MA SOT23-3

onsemi

3006 0.29
- +

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BAS40LT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 5pF @ 1V, 1MHz - 1 µA @ 25 V 40 V 120mA (DC) -55°C ~ 150°C 1 V @ 40 mA
BY520-16E-E3/54

BY520-16E-E3/54

DIODE GEN PURP 1.6KV 500MA DO204

Vishay General Semiconductor - Diodes Division

3433 0.69
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BY520-16E-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - - 1600 V 500mA -65°C ~ 175°C -
GP02-20-E3/54

GP02-20-E3/54

DIODE GEN PURP 2KV 250MA DO204

Vishay General Semiconductor - Diodes Division

3953 0.61
- +

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GP02-20-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 5 µA @ 2000 V 2000 V 250mA -65°C ~ 175°C 3 V @ 1 A
ES2JSMA

ES2JSMA

SF Rect, 600V, 2.000A, 35ns

DComponents

216 0.34
- +

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ES2JSMA

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 3 µA @ 600 V 600 V 3A -50°C ~ 150°C 1.7 V @ 2 A
BYM11-1000-E3/96

BYM11-1000-E3/96

DIODE GEN PURP 1KV 1A DO213AB

Vishay General Semiconductor - Diodes Division

3528 0.48
- +

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BYM11-1000-E3/96

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 500 ns 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 1 A
BAS16D-E3-18

BAS16D-E3-18

DIODE GEN PURP 75V 250MA SOD123

Vishay General Semiconductor - Diodes Division

3780 0.27
- +

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BAS16D-E3-18

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 6 ns 1 µA @ 75 V 75 V 250mA -55°C ~ 150°C 1.25 V @ 150 mA
BAS40-7-F

BAS40-7-F

DIODE SCHOTTKY 40V 200MA SOT23-3

Diodes Incorporated

2318 0.29
- +

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BAS40-7-F

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 5pF @ 0V, 1MHz 5 ns 200 nA @ 30 V 40 V 200mA (DC) -55°C ~ 125°C 1 V @ 40 mA
RGP02-12E-E3/54

RGP02-12E-E3/54

DIODE GEN PURP 1.2KV 500MA DO204

Vishay General Semiconductor - Diodes Division

2251 0.69
- +

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RGP02-12E-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 300 ns 5 µA @ 1200 V 1200 V 500mA -65°C ~ 175°C 1.8 V @ 100 mA
GP02-25-E3/54

GP02-25-E3/54

DIODE GEN PURP 2.5KV 250MA DO204

Vishay General Semiconductor - Diodes Division

2300 0.61
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GP02-25-E3/54

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 5 µA @ 2500 V 2500 V 250mA -65°C ~ 175°C 3 V @ 1 A
ES3GB

ES3GB

3A -400V - SMB (DO-214AA) - RECT

SURGE

250 0.35
- +

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ES3GB

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 400 V 400 V 3A -55°C ~ 150°C 1.25 V @ 3 A
NRVB140ESFT1G

NRVB140ESFT1G

DIODE SCHOTTKY 40V 1A SOD123FL

onsemi

2745 0.52
- +

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Немедленный

NRVB140ESFT1G

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 30 µA @ 40 V 40 V 1A -55°C ~ 175°C 560 mV @ 1 A
1SS417,L3M

1SS417,L3M

DIODE SCHOTTKY 40V 100MA FSC

Toshiba Semiconductor and Storage

2828 0.29
- +

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1SS417,L3M

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 15pF @ 0V, 1MHz - 5 µA @ 40 V 40 V 100mA 125°C (Max) 620 mV @ 50 mA
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