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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
BYM11-600-E3/96

BYM11-600-E3/96

DIODE GEN PURP 600V 1A DO213AB

Vishay General Semiconductor - Diodes Division

2615 0.46
- +

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BYM11-600-E3/96

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.3 V @ 1 A
MMBD914-E3-18

MMBD914-E3-18

DIODE GEN PURP 100V 200MA SOT23

Vishay General Semiconductor - Diodes Division

3598 0.22
- +

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MMBD914-E3-18

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 4 ns 5 µA @ 75 V 100 V 200mA 150°C (Max) 1 V @ 10 mA
1N2281R

1N2281R

DO5 40 AMP SILICON RECTFIER

Solid State Inc.

2539 2.50
- +

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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - 10 µA @ 1200 V 1200 V 40A -65°C ~ 200°C 1.19 V @ 90 A
RGF1A-E3/67A

RGF1A-E3/67A

DIODE GEN PURP 50V 1A DO214BA

Vishay General Semiconductor - Diodes Division

2146 0.58
- +

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RGF1A-E3/67A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8.5pF @ 4V, 1MHz 150 ns 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 1.3 V @ 1 A
RGF1J-E3/5CA

RGF1J-E3/5CA

DIODE GEN PURP 600V 1A DO214BA

Vishay General Semiconductor - Diodes Division

3938 0.58
- +

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RGF1J-E3/5CA

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 8.5pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.3 V @ 1 A
SK39B

SK39B

3A -90V - SMB (DO-214AA) - RECTI

SURGE

250 0.24
- +

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Немедленный

SK39B

Datenblatt

Bag Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 100pF @ 4V, 1MHz - 30 µA @ 90 V 90 V 3A -55°C ~ 150°C 790 mV @ 3 A
BYM11-800-E3/96

BYM11-800-E3/96

DIODE GEN PURP 800V 1A DO213AB

Vishay General Semiconductor - Diodes Division

3369 0.46
- +

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BYM11-800-E3/96

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.3 V @ 1 A
LL4148-M-18

LL4148-M-18

DIODE GEN PURP 100V 300MA SOD80

Vishay General Semiconductor - Diodes Division

3251 0.21
- +

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LL4148-M-18

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 4pF @ 0V, 1MHz 8 ns 25 nA @ 20 V 100 V 300mA 175°C (Max) 1 V @ 50 mA
1N2284

1N2284

DO5 40 AMP SILICON RECTFIER

Solid State Inc.

2002 2.50
- +

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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 10 µA @ 500 V 500 V 40A -65°C ~ 200°C 1.19 V @ 90 A
S4PGHM3_A/H

S4PGHM3_A/H

DIODE GEN PURP 400V 4A TO277A

Vishay General Semiconductor - Diodes Division

2442 0.58
- +

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S4PGHM3_A/H

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 2.5 µs 10 µA @ 400 V 400 V 4A -55°C ~ 150°C 1.1 V @ 4 A
S4PJ-M3/86A

S4PJ-M3/86A

DIODE GEN PURP 600V 4A TO277A

Vishay General Semiconductor - Diodes Division

3690 0.51
- +

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Немедленный

S4PJ-M3/86A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 2.5 µs 10 µA @ 600 V 600 V 4A -55°C ~ 150°C 1.1 V @ 4 A
SK36B

SK36B

3A -60V - SMB (DO-214AA) - RECTI

SURGE

230 0.24
- +

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Немедленный

SK36B

Datenblatt

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 250pF @ 4V, 1MHz - 200 µA @ 60 V 60 V 3A -55°C ~ 150°C 700 mV @ 3 A
BYM11-200-E3/96

BYM11-200-E3/96

DIODE GEN PURP 200V 1A DO213AB

Vishay General Semiconductor - Diodes Division

2457 0.46
- +

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Немедленный

BYM11-200-E3/96

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 1 A
LS4150GS18

LS4150GS18

DIODE GEN PURP 50V 600MA SOD80

Vishay General Semiconductor - Diodes Division

2958 0.21
- +

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Немедленный

LS4150GS18

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2.5pF @ 0V, 1MHz 4 ns 100 nA @ 50 V 50 V 600mA 175°C (Max) 1 V @ 200 mA
1N2154

1N2154

DO5 40 AMP SILICON RECTFIER

Solid State Inc.

2390 2.50
- +

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Немедленный

Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 10 µA @ 50 V 50 V 40A -65°C ~ 200°C 1.19 V @ 90 A
STPS1L20M

STPS1L20M

DIODE SCHOTTKY 20V 1A STMITE

STMicroelectronics

3421 0.62
- +

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STPS1L20M

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 75 µA @ 20 V 20 V 1A 150°C (Max) 430 mV @ 1 A
S4PK-M3/86A

S4PK-M3/86A

DIODE GEN PURP 800V 4A TO277A

Vishay General Semiconductor - Diodes Division

2230 0.51
- +

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Немедленный

S4PK-M3/86A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 2.5 µs 10 µA @ 800 V 800 V 4A -55°C ~ 150°C 1.1 V @ 4 A
P600J

P600J

ST Rect, 600V, 6A

DComponents

377 0.27
- +

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P600J

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 10 µA @ 600 V 600 V 6A -50°C ~ 175°C 1.1 V @ 6 A
BYM11-400-E3/96

BYM11-400-E3/96

DIODE GEN PURP 400V 1A DO213AB

Vishay General Semiconductor - Diodes Division

2886 0.46
- +

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Немедленный

BYM11-400-E3/96

Datenblatt

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 150 ns 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.3 V @ 1 A
BAV102-GS18

BAV102-GS18

DIODE GEN PURP 150V 250MA SOD80

Vishay General Semiconductor - Diodes Division

2095 0.23
- +

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Немедленный

BAV102-GS18

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 1.5pF @ 0V, 1MHz 50 ns 100 nA @ 150 V 150 V 250mA (DC) 175°C (Max) 1 V @ 100 mA
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