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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
GI1404-E3/45

GI1404-E3/45

DIODE GEN PURP 200V 8A TO220AC

Vishay General Semiconductor - Diodes Division

830 1.17
- +

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GI1404-E3/45

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 5 µA @ 200 V 200 V 8A -65°C ~ 150°C 975 mV @ 8 A
SS2040LL_R1_00001

SS2040LL_R1_00001

SOD-123FL, SKY

Panjit International Inc.

2187 0.43
- +

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SS2040LL_R1_00001

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 40 V 40 V 2A -50°C ~ 125°C 450 mV @ 2 A
IDW40G65C5XKSA1

IDW40G65C5XKSA1

DIODE SCHOTTKY 650V 40A TO247-3

Infineon Technologies

3663 16.57
- +

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IDW40G65C5XKSA1

Datenblatt

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1140pF @ 1V, 1MHz 0 ns 220 µA @ 650 V 650 V 40A (DC) -55°C ~ 175°C 1.7 V @ 40 A
ES1A-LTP

ES1A-LTP

DIODE GEN PURP 50V 1A DO214AC

Micro Commercial Co

3755 0.45
- +

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ES1A-LTP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 5 µA @ 50 V 50 V 1A -65°C ~ 175°C 950 mV @ 1 A
SS3P6HM3/85A

SS3P6HM3/85A

DIODE SCHOTTKY 60V 3A DO220AA

Vishay General Semiconductor - Diodes Division

3785 0.40
- +

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SS3P6HM3/85A

Datenblatt

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 80pF @ 4V, 1MHz - 100 µA @ 60 V 60 V 3A -55°C ~ 150°C 780 mV @ 3 A
VS-ETL0806FP-M3

VS-ETL0806FP-M3

DIODE GEN PURP 600V 8A TO220-2

Vishay General Semiconductor - Diodes Division

998 1.25
- +

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VS-ETL0806FP-M3

Datenblatt

Bulk FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 9 µA @ 600 V 600 V 8A -65°C ~ 175°C 1.07 V @ 8 A
RB160VAM-60TR

RB160VAM-60TR

DIODE SCHOTTKY 60V 1A TUMD2M

Rohm Semiconductor

411 0.52
- +

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RB160VAM-60TR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 40 µA @ 60 V 60 V 1A 150°C (Max) 670 mV @ 1 A
NDSH25170A

NDSH25170A

SIC JBS 1700V 25A TO247

onsemi

3660 20.03
- +

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NDSH25170A

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 2025pF @ 1V, 100kHz 0 ns 40 µA @ 1700 V 1700 V 25A -55°C ~ 175°C 1.75 V @ 25 A
ES1B-LTP

ES1B-LTP

DIODE GEN PURP 100V 1A DO214AC

Micro Commercial Co

2945 0.45
- +

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ES1B-LTP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 950 mV @ 1 A
LL4004G L0G

LL4004G L0G

DIODE GEN PURP 400V 1A MELF

Taiwan Semiconductor Corporation

3744 0.39
- +

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LL4004G L0G

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 15pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1A -65°C ~ 150°C 1.1 V @ 30 A
MBR10100-M3/4W

MBR10100-M3/4W

DIODE SCHOTTKY 100V 10A TO220AC

Vishay General Semiconductor - Diodes Division

1000 1.28
- +

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MBR10100-M3/4W

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 10A -65°C ~ 150°C 800 mV @ 10 A
RFN1LAM6STR

RFN1LAM6STR

DIODE GEN PURP 600V 800MA PMDTM

Rohm Semiconductor

3888 0.52
- +

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RFN1LAM6STR

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 1 µA @ 600 V 600 V 800mA 150°C (Max) 1.45 V @ 800 mA
GC50MPS12-247

GC50MPS12-247

SIC DIODE 1200V 50A TO-247-2

GeneSiC Semiconductor

2205 24.83
- +

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GC50MPS12-247

Datenblatt

Tube SiC Schottky MPS™ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 3263pF @ 1V, 1MHz 0 ns 40 µA @ 1200 V 1200 V 212A (DC) -55°C ~ 175°C 1.8 V @ 50 A
LL101C-GS08

LL101C-GS08

DIODE SCHOTTKY 40V 30MA SOD80

Vishay General Semiconductor - Diodes Division

3364 0.40
- +

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LL101C-GS08

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2.2pF @ 0V, 1MHz 1 ns 200 nA @ 30 V 40 V 30mA (DC) 125°C (Max) 390 mV @ 1 mA
PMEG3020EGWX

PMEG3020EGWX

DIODE SCHOTTKY 30V 2A SOD123

Nexperia USA Inc.

401 0.45
- +

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PMEG3020EGWX

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 60pF @ 1V, 1MHz - 1 mA @ 30 V 30 V 2A 150°C (Max) 620 mV @ 2 A
SS20100FL_R1_00001

SS20100FL_R1_00001

SOD-123FL, SKY

Panjit International Inc.

2204 0.47
- +

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SS20100FL_R1_00001

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 40 µA @ 100 V 100 V 2A -50°C ~ 150°C 850 mV @ 2 A
V20100S-E3/4W

V20100S-E3/4W

DIODE SCHOTTKY 100V 20A TO220AB

Vishay General Semiconductor - Diodes Division

995 1.32
- +

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V20100S-E3/4W

Datenblatt

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 100 V 100 V 20A -40°C ~ 150°C 900 mV @ 20 A
RS1MFP

RS1MFP

DIODE GP 1000V 1.2A SOD123HE

onsemi

2926 0.44
- +

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RS1MFP

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 18pF @ 0V, 1MHz 300 ns 5 µA @ 1000 V 1000 V 1.2A -55°C ~ 150°C 1.3 V @ 1.2 A
FFSH50120A

FFSH50120A

1200V 50A SIC SBD

onsemi

2017 35.71
- +

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FFSH50120A

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 2560pF @ 1V, 100kHz 0 ns 200 µA @ 1200 V 1200 V 77A (DC) -55°C ~ 175°C -
B140Q-13-F

B140Q-13-F

DIODE SCHOTTKY 40V 1A SMA

Diodes Incorporated

3311 0.45
- +

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B140Q-13-F

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 110pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 1A -65°C ~ 150°C 500 mV @ 1 A
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