Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GI1404-E3/45DIODE GEN PURP 200V 8A TO220AC |
830 | 1.17 |
ДобавитьНемедленный |
Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A | ||||
SS2040LL_R1_00001SOD-123FL, SKY |
2187 | 0.43 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 2A | -50°C ~ 125°C | 450 mV @ 2 A | ||||
IDW40G65C5XKSA1DIODE SCHOTTKY 650V 40A TO247-3 |
3663 | 16.57 |
ДобавитьНемедленный |
Datenblatt |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1140pF @ 1V, 1MHz | 0 ns | 220 µA @ 650 V | 650 V | 40A (DC) | -55°C ~ 175°C | 1.7 V @ 40 A | |||
ES1A-LTPDIODE GEN PURP 50V 1A DO214AC |
3755 | 0.45 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 950 mV @ 1 A | ||||
SS3P6HM3/85ADIODE SCHOTTKY 60V 3A DO220AA |
3785 | 0.40 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 780 mV @ 3 A | |||
VS-ETL0806FP-M3DIODE GEN PURP 600V 8A TO220-2 |
998 | 1.25 |
ДобавитьНемедленный |
Datenblatt |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 9 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.07 V @ 8 A | |||
RB160VAM-60TRDIODE SCHOTTKY 60V 1A TUMD2M |
411 | 0.52 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 40 µA @ 60 V | 60 V | 1A | 150°C (Max) | 670 mV @ 1 A | ||||
NDSH25170ASIC JBS 1700V 25A TO247 |
3660 | 20.03 |
ДобавитьНемедленный |
Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2025pF @ 1V, 100kHz | 0 ns | 40 µA @ 1700 V | 1700 V | 25A | -55°C ~ 175°C | 1.75 V @ 25 A | ||||
ES1B-LTPDIODE GEN PURP 100V 1A DO214AC |
2945 | 0.45 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 950 mV @ 1 A | ||||
LL4004G L0GDIODE GEN PURP 400V 1A MELF |
3744 | 0.39 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.1 V @ 30 A | ||||
MBR10100-M3/4WDIODE SCHOTTKY 100V 10A TO220AC |
1000 | 1.28 |
ДобавитьНемедленный |
Datenblatt |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | ||||
RFN1LAM6STRDIODE GEN PURP 600V 800MA PMDTM |
3888 | 0.52 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 1 µA @ 600 V | 600 V | 800mA | 150°C (Max) | 1.45 V @ 800 mA | ||||
GC50MPS12-247SIC DIODE 1200V 50A TO-247-2 |
2205 | 24.83 |
ДобавитьНемедленный |
Datenblatt |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 3263pF @ 1V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 212A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A | |||
LL101C-GS08DIODE SCHOTTKY 40V 30MA SOD80 |
3364 | 0.40 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2.2pF @ 0V, 1MHz | 1 ns | 200 nA @ 30 V | 40 V | 30mA (DC) | 125°C (Max) | 390 mV @ 1 mA | ||||
PMEG3020EGWXDIODE SCHOTTKY 30V 2A SOD123 |
401 | 0.45 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 60pF @ 1V, 1MHz | - | 1 mA @ 30 V | 30 V | 2A | 150°C (Max) | 620 mV @ 2 A | |||
SS20100FL_R1_00001SOD-123FL, SKY |
2204 | 0.47 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 40 µA @ 100 V | 100 V | 2A | -50°C ~ 150°C | 850 mV @ 2 A | ||||
V20100S-E3/4WDIODE SCHOTTKY 100V 20A TO220AB |
995 | 1.32 |
ДобавитьНемедленный |
Datenblatt |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 900 mV @ 20 A | |||
RS1MFPDIODE GP 1000V 1.2A SOD123HE |
2926 | 0.44 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 0V, 1MHz | 300 ns | 5 µA @ 1000 V | 1000 V | 1.2A | -55°C ~ 150°C | 1.3 V @ 1.2 A | |||
FFSH50120A1200V 50A SIC SBD |
2017 | 35.71 |
ДобавитьНемедленный |
Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 2560pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 77A (DC) | -55°C ~ 175°C | - | ||||
B140Q-13-FDIODE SCHOTTKY 40V 1A SMA |
3311 | 0.45 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 40 V | 40 V | 1A | -65°C ~ 150°C | 500 mV @ 1 A |