Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
GP3D010A065D SIC SCHOTTKY DIODE 650V TO263-2L SemiQ	500	3.44	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	-	-	Active	-	-	-	-	650 V	10A	-	-
NTE6030 R-300 PRV 60A CATH CASE NTE Electronics, Inc	3596	14.65	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	10 mA @ 240 V	240 V	60A	-65°C ~ 175°C	1.4 V @ 60 A
RS1KLS RVG DIODE GEN PURP 800V 1.2A SOD123 Taiwan Semiconductor Corporation	4425	0.44	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	300 ns	5 µA @ 800 V	800 V	1.2A	-55°C ~ 150°C	1.3 V @ 1.2 A
FR20DAD2 DIODE SFR D2PAK 200V 20A Diotec Semiconductor	1000	0.84	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	200 ns	5 µA @ 200 V	200 V	20A	-50°C ~ 150°C	960 mV @ 20 A
NTE5913 R-50PRV 20A ANODE CASE NTE Electronics, Inc	3905	10.38	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	12 mA @ 50 V	50 V	20A	-65°C ~ 175°C	1.23 V @ 63 A
MBR745-E3/45 DIODE SCHOTTKY 45V 7.5A TO220AC Vishay General Semiconductor - Diodes Division	980	1.00	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 45 V	45 V	7.5A	-65°C ~ 175°C	840 mV @ 15 A
STTH30ST06WY DIODE GEN PURP 600V 30A DO247 STMicroelectronics	312	3.48	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	50 µA @ 600 V	600 V	30A	-40°C ~ 175°C	3.6 V @ 30 A
NTE5929 R-800PRV 20A ANODE CASE NTE Electronics, Inc	3935	14.85	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	12 mA @ 800 V	800 V	20A	-65°C ~ 175°C	1.23 V @ 63 A
PMEG2020EJ,115 DIODE SCHOTTKY 20V 2A SOD323F Nexperia USA Inc.	4388	0.44	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	60pF @ 5V, 1MHz	-	200 µA @ 20 V	20 V	2A (DC)	150°C (Max)	525 mV @ 2 A
FR20DKD2 DIODE SFR D2PAK 200V 20A Diotec Semiconductor	1000	0.84	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	200 ns	5 µA @ 200 V	200 V	20A	-50°C ~ 150°C	960 mV @ 20 A
NTE5888 R-1200V 25A DO4 KK NTE Electronics, Inc	3558	10.43	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	1 mA @ 1200 V	1200 V	30A	-40°C ~ 175°C	1.2 V @ 30 A
BYV29FX-600,127 DIODE GEN PURP 600V 9A TO220FP WeEn Semiconductors	245	1.04	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	50 µA @ 600 V	600 V	9A	150°C (Max)	1.9 V @ 8 A
GP3D010A065B SIC SCHOTTKY DIODE 650V TO247-2 SemiQ	277	3.50	- + Добавить Немедленный	Datenblatt	Tube	Amp+™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	419pF @ 1V, 1MHz	0 ns	25 µA @ 650 V	650 V	10A (DC)	-55°C ~ 175°C	1.6 V @ 10 A
NTE5928 R-800PRV 20A CATH CASE NTE Electronics, Inc	3513	14.85	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	12 mA @ 800 V	800 V	20A	-65°C ~ 175°C	1.23 V @ 63 A
BYG21K-E3/TR3 DIODE AVALANCHE 800V 1.5A Vishay General Semiconductor - Diodes Division	4033	0.44	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Surface Mount	-	120 ns	1 µA @ 800 V	800 V	1.5A	-55°C ~ 150°C	1.6 V @ 1.5 A
FT2000AD DIODE FR TO-220AC 200V 20A Diotec Semiconductor	1000	0.85	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	200 ns	5 µA @ 200 V	200 V	20A	-50°C ~ 150°C	960 mV @ 20 A
NTE5896 R-200PRV 16A CATH CASE NTE Electronics, Inc	2352	10.43	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	12 mA @ 200 V	200 V	16A	-65°C ~ 175°C	1.23 V @ 50 A
RFN20TF6SFHC9 ROHM'S FAST RECOVERY DIODES ARE Rohm Semiconductor	743	1.88	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	10 µA @ 600 V	600 V	20A	150°C (Max)	1.55 V @ 20 A
LSIC2SD120A05 DIODE SCHOTTKY 1.2KV 17.5A TO220 Littelfuse Inc.	162	3.58	- + Добавить Немедленный	Datenblatt	Tube	Gen2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Obsolete	Through Hole	310pF @ 1V, 1MHz	0 ns	100 µA @ 1200 V	1200 V	17.5A (DC)	-55°C ~ 175°C	1.8 V @ 5 A
NTE6061 R-400 PRV 70A ANODE CASE NTE Electronics, Inc	3961	15.20	- + Добавить Немедленный	Datenblatt	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	2 mA @ 400 V	400 V	70A	-65°C ~ 190°C	1.25 V @ 20 mA