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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
MUR460S R6G

MUR460S R6G

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2590 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 65pF @ 4V, 1MHz 50 ns 10 µA @ 600 V 600 V 4A -55°C ~ 175°C 1.25 V @ 4 A
2A07G B0G

2A07G B0G

DIODE GEN PURP 2A DO204AC

Taiwan Semiconductor Corporation

2548 0.00
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2A07G B0G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 1000 V - 2A -55°C ~ 150°C 1 V @ 2 A
S12JC M6

S12JC M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2970 0.00
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Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 600 V 600 V 12A (DC) -55°C ~ 150°C 1.1 V @ 12 A
2A07GHB0G

2A07GHB0G

DIODE GEN PURP 2A DO204AC

Taiwan Semiconductor Corporation

3206 0.00
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2A07GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 1000 V - 2A -55°C ~ 150°C 1 V @ 2 A
SS315 R6

SS315 R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3119 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 150 V 150 V 3A (DC) -55°C ~ 150°C 950 mV @ 3 A
31DF4 B0G

31DF4 B0G

DIODE GEN PURP 400V 3A DO201AD

Taiwan Semiconductor Corporation

3978 0.00
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31DF4 B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 20 µA @ 400 V 400 V 3A -40°C ~ 150°C 1.7 V @ 3 A
SK84C R7

SK84C R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2534 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 40 V 40 V 8A (DC) -55°C ~ 125°C 550 mV @ 8 A
31DF6 B0G

31DF6 B0G

DIODE GEN PURP 600V 3A DO201AD

Taiwan Semiconductor Corporation

2736 0.00
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Немедленный

31DF6 B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 20 µA @ 600 V 600 V 3A -40°C ~ 150°C 1.7 V @ 3 A
SS315 R7

SS315 R7

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2077 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 150 V 150 V 3A (DC) -55°C ~ 150°C 950 mV @ 3 A
3A100 B0G

3A100 B0G

DIODE GEN PURP 3A DO204AC

Taiwan Semiconductor Corporation

2179 0.00
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Немедленный

3A100 B0G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 27pF @ 4V, 1MHz - 5 µA @ 1000 V - 3A -55°C ~ 150°C 1.1 V @ 3 A
S4A M6

S4A M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2663 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 4A -55°C ~ 150°C 1.15 V @ 4 A
3A100HB0G

3A100HB0G

DIODE GEN PURP 3A DO204AC

Taiwan Semiconductor Corporation

2779 0.00
- +

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Немедленный

3A100HB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz - 5 µA @ 1000 V - 3A -55°C ~ 150°C 1.1 V @ 3 A
ESH3C R7

ESH3C R7

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

3906 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 20 ns 5 µA @ 150 V 150 V 3A -55°C ~ 175°C 900 mV @ 3 A
3A60 B0G

3A60 B0G

DIODE GEN PURP 600V 3A DO204AC

Taiwan Semiconductor Corporation

3191 0.00
- +

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Немедленный

3A60 B0G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 27pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.1 V @ 3 A
S5A R6G

S5A R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2237 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 50 V 50 V 5A -55°C ~ 150°C 1.15 V @ 5 A
3A60HB0G

3A60HB0G

DIODE GEN PURP 600V 3A DO204AC

Taiwan Semiconductor Corporation

3612 0.00
- +

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Немедленный

3A60HB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 27pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.1 V @ 3 A
S5B R6

S5B R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3351 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 100 V 100 V 5A -55°C ~ 150°C 1.15 V @ 5 A
6A05G B0G

6A05G B0G

DIODE GEN PURP 50V 6A R-6

Taiwan Semiconductor Corporation

3916 0.00
- +

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Немедленный

6A05G B0G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 50 V 50 V 6A -55°C ~ 150°C 1.1 V @ 6 A
SSL34 R6G

SSL34 R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3530 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 40 V 40 V 3A (DC) -55°C ~ 125°C 410 mV @ 3 A
6A05GHB0G

6A05GHB0G

DIODE GEN PURP 50V 6A R-6

Taiwan Semiconductor Corporation

3901 0.00
- +

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Немедленный

6A05GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 4V, 1MHz - 10 µA @ 50 V 50 V 6A -55°C ~ 150°C 1.1 V @ 6 A
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