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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
1N5392G B0G

1N5392G B0G

DIODE GEN PURP 100V 1.5A DO204AC

Taiwan Semiconductor Corporation

2258 0.00
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1N5392G B0G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
SK53C R6G

SK53C R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3667 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 30 V 30 V 5A -55°C ~ 150°C 550 mV @ 5 A
1N5392GHB0G

1N5392GHB0G

DIODE GEN PURP 100V 1.5A DO204AC

Taiwan Semiconductor Corporation

3560 0.00
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Немедленный

1N5392GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 100 V 100 V 1.5A -55°C ~ 150°C 1.1 V @ 1.5 A
MUR420S R6G

MUR420S R6G

DIODE GEN PURP 3A DO214AB

Taiwan Semiconductor Corporation

2801 0.00
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Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 65pF @ 4V, 1MHz 25 ns 5 µA @ 200 V 200 V 4A -55°C ~ 175°C 875 mV @ 4 A
1N5393G B0G

1N5393G B0G

DIODE GEN PURP 200V 1.5A DO204AC

Taiwan Semiconductor Corporation

3325 0.00
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Немедленный

1N5393G B0G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
MUR360S R6G

MUR360S R6G

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

2222 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount - 50 ns 10 µA @ 600 V 600 V 3A -55°C ~ 175°C 1.25 V @ 3 A
1N5393GHB0G

1N5393GHB0G

DIODE GEN PURP 200V 1.5A DO204AC

Taiwan Semiconductor Corporation

3132 0.00
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Немедленный

1N5393GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 200 V 200 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
S12KC R6

S12KC R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2998 0.00
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Немедленный

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 78pF @ 4V, 1MHz - 1 µA @ 800 V 800 V 12A (DC) -55°C ~ 150°C 1.1 V @ 12 A
1N5395G B0G

1N5395G B0G

DIODE GEN PURP 400V 1.5A DO204AC

Taiwan Semiconductor Corporation

3590 0.00
- +

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Немедленный

1N5395G B0G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
ES3C M6

ES3C M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2959 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 45pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
1N5395GHB0G

1N5395GHB0G

DIODE GEN PURP 400V 1.5A DO204AC

Taiwan Semiconductor Corporation

2025 0.00
- +

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Немедленный

1N5395GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 400 V 400 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SK810C R6

SK810C R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3246 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 100 V 100 V 8A (DC) -55°C ~ 150°C 900 mV @ 8 A
1N5397G B0G

1N5397G B0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation

2154 0.00
- +

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Немедленный

1N5397G B0G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
S4D R6G

S4D R6G

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

3033 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 60pF @ 4V, 1MHz 1.5 µs 10 µA @ 200 V 200 V 4A -55°C ~ 150°C 1.15 V @ 4 A
1N5397GHB0G

1N5397GHB0G

DIODE GEN PURP 600V 1.5A DO204AC

Taiwan Semiconductor Corporation

2701 0.00
- +

Добавить

Немедленный

1N5397GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 600 V 600 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SK53C R6

SK53C R6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2410 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 30 V 30 V 5A -55°C ~ 150°C 550 mV @ 5 A
1N5398G B0G

1N5398G B0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation

3944 0.00
- +

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Немедленный

1N5398G B0G

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
SSL33 M6

SSL33 M6

DIODE SCHOTTKY DO214AB

Taiwan Semiconductor Corporation

2490 0.00
- +

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Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 200 µA @ 30 V 30 V 3A (DC) -55°C ~ 125°C 410 mV @ 3 A
1N5398GHB0G

1N5398GHB0G

DIODE GEN PURP 800V 1.5A DO204AC

Taiwan Semiconductor Corporation

2619 0.00
- +

Добавить

Немедленный

1N5398GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz - 5 µA @ 800 V 800 V 1.5A -55°C ~ 150°C 1 V @ 1.5 A
HS5M R6G

HS5M R6G

DIODE GENERAL PURPOSE DO214AB

Taiwan Semiconductor Corporation

3625 0.00
- +

Добавить

Немедленный

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 50pF @ 4V, 1MHz 75 ns 10 µA @ 1000 V 1000 V 5A (DC) -55°C ~ 150°C 1.7 V @ 5 A
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