Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
1N4002SP BK DIODE GEN PURP 100V 1A DO41 Central Semiconductor Corp	2238	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	-	5 µA @ 100 V	100 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
SF3003PTHC0G DIODE GEN PURP 150V 30A TO247AD Taiwan Semiconductor Corporation	3405	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	30A	-55°C ~ 150°C	950 mV @ 15 A
1N4004 BK DIODE GEN PURP 400V 1A DO41 Central Semiconductor Corp	2308	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	-	5 µA @ 200 V	400 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
SF3004PTHC0G DIODE GEN PURP 200V 30A TO247AD Taiwan Semiconductor Corporation	3326	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 200 V	200 V	30A	-55°C ~ 150°C	950 mV @ 15 A
1N4004GPP BK DIODE GEN PURP 400V 1A DO41 Central Semiconductor Corp	3708	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	8pF @ 4V, 1MHz	2 µs	5 µA @ 400 V	400 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
SF3005PT C0G DIODE GEN PURP 300V 30A TO247AD Taiwan Semiconductor Corporation	2560	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	30A	-55°C ~ 150°C	1.3 V @ 15 A
1N4005GL BK DIODE GEN PURP 600V 1A DO41 Central Semiconductor Corp	3675	- + Добавить Немедленный		Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	-	5 µA @ 600 V	600 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
SF3005PTHC0G DIODE GEN PURP 300V 30A TO247AD Taiwan Semiconductor Corporation	2697	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	30A	-55°C ~ 150°C	1.3 V @ 15 A
1N4005GPP BK DIODE GEN PURP 600V 1A DO41 Central Semiconductor Corp	2460	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	8pF @ 4V, 1MHz	2 µs	5 µA @ 600 V	600 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
SF3006PTHC0G DIODE GEN PURP 400V 30A TO247AD Taiwan Semiconductor Corporation	2209	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	175pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	30A	-55°C ~ 150°C	1.3 V @ 15 A
1N4006 BK DIODE GEN PURP 800V 1A DO41 Central Semiconductor Corp	3664	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	-	5 µA @ 800 V	800 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
SF801G C0G DIODE GEN PURP 50V 8A TO220AB Taiwan Semiconductor Corporation	3692	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	8A	-55°C ~ 150°C	975 mV @ 8 A
1N4007GPP BK DIODE GEN PURP 1KV 1A DO41 Central Semiconductor Corp	3471	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	8pF @ 4V, 1MHz	2 µs	5 µA @ 1000 V	1000 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
SF801GHC0G DIODE GEN PURP 50V 8A TO220AB Taiwan Semiconductor Corporation	2278	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	8A	-55°C ~ 150°C	975 mV @ 8 A
1N4002GL TR DIODE GEN PURP 100V 1A DO41 Central Semiconductor Corp	2976	- + Добавить Немедленный		Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	-	5 µA @ 100 V	100 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
SF802G C0G DIODE GEN PURP 100V 8A TO220AB Taiwan Semiconductor Corporation	2048	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	8A	-55°C ~ 150°C	975 mV @ 8 A
1N4002SP TR DIODE GEN PURP 100V 1A DO41 Central Semiconductor Corp	3309	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	-	5 µA @ 100 V	100 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
SF802GHC0G DIODE GEN PURP 100V 8A TO220AB Taiwan Semiconductor Corporation	2404	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	8A	-55°C ~ 150°C	975 mV @ 8 A
1N4003 TR DIODE GEN PURP 200V 1A DO41 Central Semiconductor Corp	2092	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	-	5 µA @ 200 V	200 V	1A	-65°C ~ 175°C	1.1 V @ 1 A
SF803G C0G DIODE GEN PURP 150V 8A TO220AB Taiwan Semiconductor Corporation	3249	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	70pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	8A	-55°C ~ 150°C	975 mV @ 8 A