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| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UF27520070A1.T2PIV 200V IO 90A TRR 70NS CHIP SI |
3100 | 2.64 |
ДобавитьНемедленный |
Datenblatt |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 70 ns | 60 µA @ 200 V | 200 V | 90A | 150°C (Max) | 1 V @ 90 A | |||
|
|
VS-VSKE56/12DIODE GEN PURP 1.2KV 60A ADDAPAK |
3396 | 35.52 |
ДобавитьНемедленный |
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 10 mA @ 1200 V | 1200 V | 60A | -40°C ~ 150°C | - | |||
|
C6D06065G6A 650V SIC SCHOTTKY DIODE |
3681 | 2.65 |
ДобавитьНемедленный |
Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 393pF @ 0V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 23A (DC) | -55°C ~ 175°C | 1.4 V @ 6 A | |||
|
JANS1N5802US/TRRECTIFIER UFR,FRR |
2218 | 35.63 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR) | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 10V, 1MHz | 25 ns | - | 50 V | 1A | -65°C ~ 175°C | 975 mV @ 2.5 A | ||
|
|
DSEP29-12BPOWER DIODE DISCRETES-FRED TO-22 |
2044 | 2.66 |
ДобавитьНемедленный |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 600V, 1MHz | 140 ns | 100 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 3.76 V @ 30 A | ||||
|
|
JANS1N5804US/TRRECTIFIER UFR,FRR |
3567 | 35.63 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR) | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 150 V | 100 V | 1A | -65°C ~ 175°C | 975 mV @ 2.5 A | ||
|
|
SD165SC150B.T1PIV 150V IO 30A CHIP SIZE 165MIL |
3703 | 2.67 |
ДобавитьНемедленный |
Datenblatt |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1000pF @ 5V, 1MHz | - | 1 mA @ 150 V | 150 V | 30A | -55°C ~ 200°C | 890 mV @ 30 A | |||
|
JANTX1N4454UR-1/TRSIGNAL/COMPUTER DIODE |
3812 | 2.67 |
ДобавитьНемедленный |
Tape & Reel (TR) | Military, MIL-PRF-19500/144 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 100 nA @ 50 V | 50 V | 200mA (DC) | -55°C ~ 175°C | 1 V @ 10 mA | |||
|
IDK08G65C5XTMA2DIODE SCHOTTKY 650V 8A TO263-2 |
3953 | 2.67 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR) | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 250pF @ 1V, 1MHz | 0 ns | - | 650 V | 8A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A | ||
|
|
1N3289ARDIODE GEN PURP 200V 100A DO205AA |
2327 | 56.12 |
ДобавитьНемедленный |
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 24 mA @ 200 V | 200 V | 100A | -40°C ~ 200°C | 1.5 V @ 100 A | |||
|
FFSPF0865A650V 8A SIC SBD |
3777 | 2.67 |
ДобавитьНемедленный |
Datenblatt |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 463pF @ 1V, 100kHz | 0 ns | 200 µA @ 650 V | 650 V | 8A (DC) | -55°C ~ 175°C | 1.75 V @ 8 A | |||
|
|
DHG40I4500KOPOWER DIODE DISCRETES-SONIC ISOP |
3904 | 56.14 |
ДобавитьНемедленный |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 13pF @ 1.8kV, 1MHz | 1.45 µs | 100 µA @ 4500 V | 4500 V | 43A | -40°C ~ 150°C | 3 V @ 50 A | ||||
|
|
SD175SA30A.T1PIV 30V IO 30A CHIP SIZE 175MIL |
2188 | 2.67 |
ДобавитьНемедленный |
Datenblatt |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2200pF @ 5V, 1MHz | - | 4 mA @ 30 V | 30 V | 30A | -55°C ~ 150°C | 490 mV @ 30 A | |||
|
JANS1N5617/TRRECTIFIER UFR,FRR |
3230 | 56.21 |
ДобавитьНемедленный |
Tape & Reel (TR) | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | - | 400 V | 1A | -65°C ~ 200°C | 1.6 V @ 3 A | |||
|
|
SD175SA30B.T1PIV 30V IO 30A CHIP SIZE 175MIL |
3587 | 2.67 |
ДобавитьНемедленный |
Datenblatt |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2200pF @ 5V, 1MHz | - | 4 mA @ 30 V | 30 V | 30A | -55°C ~ 150°C | 490 mV @ 30 A | |||
|
VS-302U60ADIODE GEN PURP 600V 300A DO9 |
2243 | 56.27 |
ДобавитьНемедленный |
Datenblatt |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 600 V | 300A | -65°C ~ 200°C | 1.46 V @ 942 A | |||
|
|
SD175SA45A.T1PIV 45V IO 30A CHIP SIZE 175MIL |
2455 | 2.67 |
ДобавитьНемедленный |
Datenblatt |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1600pF @ 5V, 1MHz | - | 3 mA @ 45 V | 45 V | 30A | -55°C ~ 150°C | 560 mV @ 30 A | |||
|
|
JANTX1N1186RSILICON RECTIFIER |
3547 | 56.34 |
ДобавитьНемедленный |
Datenblatt |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |||
|
|
SD175SB45A.T1PIV 45V IO 30A CHIP SIZE 175MIL |
2368 | 2.67 |
ДобавитьНемедленный |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1600pF @ 5V, 1MHz | - | 800 µA @ 45 V | 45 V | 30A | -55°C ~ 175°C | 640 mV @ 30 A | ||||
|
|
SD175SB45B.T1PIV 45V IO 30A CHIP SIZE 175MIL |
3201 | 2.67 |
ДобавитьНемедленный |
Tray | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1600pF @ 5V, 1MHz | - | 800 µA @ 45 V | 45 V | 30A | -55°C ~ 175°C | 640 mV @ 30 A |
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