Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
EK 16V0 DIODE SCHOTTKY 60V 1.5A AXIAL Sanken	2228	0.26	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	1 mA @ 60 V	60 V	1.5A	-40°C ~ 150°C	620 mV @ 1.5 A
V2PM6LHM3/I SCHOTTKY RECTIFIER 2A 60V SMP Vishay General Semiconductor - Diodes Division	3759	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101, eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	250pF @ 4V, 1MHz	-	200 µA @ 60 V	60 V	2A (DC)	-40°C ~ 175°C	630 mV @ 2 A
EK 19V0 DIODE SCHOTTKY 90V 1.5A AXIAL Sanken	2112	0.26	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	2 mA @ 90 V	90 V	1.5A	-40°C ~ 150°C	810 mV @ 1.5 A
V2PL45LHM3/I SCHOTTKY RECTIFIER 2A 45V SMP Vishay General Semiconductor - Diodes Division	3280	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101, eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	390pF @ 4V, 1MHz	-	300 µA @ 45 V	45 V	2A (DC)	-40°C ~ 150°C	530 mV @ 2 A
EM 1AV0 DIODE GEN PURP 600V 1A AXIAL Sanken	2065	0.26	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 600 V	600 V	1A	-40°C ~ 150°C	970 mV @ 1 A
V2P6LHM3/I SCHOTTKY RECTIFIER 2A 60V SMP Vishay General Semiconductor - Diodes Division	2486	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101, eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	255pF @ 4V, 1MHz	-	480 µA @ 60 V	60 V	2A (DC)	-40°C ~ 150°C	600 mV @ 2 A
EM 1AW DIODE GEN PURP 600V 1A AXIAL Sanken	2233	0.26	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 600 V	600 V	1A	-40°C ~ 150°C	970 mV @ 1 A
S1PBHM3/84A DIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division	3706	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101, eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	6pF @ 4V, 1MHz	1.8 µs	1 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
EM 1YV0 DIODE GEN PURP 100V 1A AXIAL Sanken	3833	0.26	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 100 V	100 V	1A	-40°C ~ 150°C	970 mV @ 1 A
S1PDHM3/84A DIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division	2046	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101, eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	6pF @ 4V, 1MHz	1.8 µs	1 µA @ 200 V	200 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
EM 1YV1 DIODE GEN PURP 100V 1A AXIAL Sanken	2732	0.26	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 100 V	100 V	1A	-40°C ~ 150°C	970 mV @ 1 A
S1PMHM3/84A DIODE GEN PURP 1KV 1A DO220AA Vishay General Semiconductor - Diodes Division	3524	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101, eSMP®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	6pF @ 4V, 1MHz	1.8 µs	1 µA @ 1000 V	1000 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
EM01ZV0 DIODE GEN PURP 200V 1A AXIAL Sanken	3421	0.26	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 200 V	200 V	1A	-40°C ~ 150°C	970 mV @ 1 A
SFT14G R0G DIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation	2534	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	1A	-55°C ~ 150°C	950 mV @ 1 A
EM01ZW DIODE GEN PURP 200V 1A AXIAL Sanken	2406	0.26	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 200 V	200 V	1A	-40°C ~ 150°C	970 mV @ 1 A
UG06A R0G DIODE GEN PURP 50V 600MA TS-1 Taiwan Semiconductor Corporation	2427	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	9pF @ 4V, 1MHz	15 ns	5 µA @ 50 V	50 V	600mA	-55°C ~ 150°C	950 mV @ 600 mA
EP01CV0 DIODE GEN PURP 1KV 200MA AXIAL Sanken	2920	0.26	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	-	200 ns	5 µA @ 1000 V	1000 V	200mA	-40°C ~ 150°C	4 V @ 200 mA
UG06B R0G DIODE GEN PURP 100V 600MA TS-1 Taiwan Semiconductor Corporation	3318	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	9pF @ 4V, 1MHz	15 ns	5 µA @ 100 V	100 V	600mA	-55°C ~ 150°C	950 mV @ 600 mA
EP01CW DIODE GEN PURP 1KV 200MA AXIAL Sanken	3828	0.26	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	-	200 ns	5 µA @ 1000 V	1000 V	200mA	-40°C ~ 150°C	4 V @ 200 mA
UG06C R0G DIODE GEN PURP 150V 600MA TS-1 Taiwan Semiconductor Corporation	3188	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	9pF @ 4V, 1MHz	15 ns	5 µA @ 150 V	150 V	600mA	-55°C ~ 150°C	950 mV @ 600 mA