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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
VS-3EJH01HM3/6B

VS-3EJH01HM3/6B

DIODE GEN PURP 100V 3A DO221AC

Vishay General Semiconductor - Diodes Division

131 0.57
- +

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VS-3EJH01HM3/6B

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 2 µA @ 100 V 100 V 3A -65°C ~ 175°C 930 mV @ 3 A
SCS215AGC17

SCS215AGC17

DIODE SCHOTTKY 650V 15A TO220AC

Rohm Semiconductor

2866 6.07
- +

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Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 550pF @ 1V, 1MHz 0 ns 300 µA @ 600 V 650 V 15A (DC) 175°C 1.55 V @ 15 A
ES2DHE3_A/I

ES2DHE3_A/I

DIODE GEN PURP 200V 2A DO214AA

Vishay General Semiconductor - Diodes Division

120 0.57
- +

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ES2DHE3_A/I

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 18pF @ 4V, 1MHz 20 ns 10 µA @ 200 V 200 V 2A -55°C ~ 150°C 900 mV @ 2 A
VS-HFA06PB120-N3

VS-HFA06PB120-N3

DIODE GEN PURP 1.2KV 6A TO247AC

Vishay General Semiconductor - Diodes Division

3854 6.10
- +

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VS-HFA06PB120-N3

Datenblatt

Tube HEXFRED® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 80 ns 5 µA @ 1200 V 1200 V 6A -55°C ~ 150°C 3 V @ 6 A
BYM13-20-E3/96

BYM13-20-E3/96

DIODE SCHOTTKY 20V 1A DO213AB

Vishay General Semiconductor - Diodes Division

118 0.57
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BYM13-20-E3/96

Datenblatt

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 110pF @ 4V, 1MHz - 500 µA @ 20 V 20 V 1A -55°C ~ 125°C 500 mV @ 1 A
MSC030SDA070B

MSC030SDA070B

DIODE SCHOTTKY 700V TO-247

Microchip Technology

2019 6.23
- +

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MSC030SDA070B

Datenblatt

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1200pF @ 1V, 1MHz 0 ns 200 µA @ 700 V 700 V 60A (DC) -55°C ~ 175°C 1.8 V @ 30 A
1N5553

1N5553

DIODE GEN PURP 800V 3A AXIAL

Microchip Technology

2599 6.37
- +

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1N5553

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 800 V 800 V 3A -65°C ~ 175°C 1.2 V @ 9 A
C3D10065I

C3D10065I

DIODE SCHOTTKY 650V 10A TO220-2

Wolfspeed, Inc.

2673 6.40
- +

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C3D10065I

Datenblatt

Tube Z-Rec® RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 480pF @ 0V, 1MHz 0 ns 50 µA @ 650 V 650 V 19A (DC) -55°C ~ 175°C -
1N2159

1N2159

DO5 40 AMP SILICON RECTFIER

Solid State Inc.

3700 2.50
- +

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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 10 µA @ 500 V 500 V 40A -65°C ~ 200°C 1.19 V @ 90 A
VS-16F60

VS-16F60

DIODE GEN PURP 600V 16A DO203AA

Vishay General Semiconductor - Diodes Division

3711 6.48
- +

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VS-16F60

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 12 mA @ 600 V 600 V 16A -65°C ~ 175°C 1.23 V @ 50 A
1N1434R

1N1434R

DO5 40 AMP SILICON RECTFIER

Solid State Inc.

2012 2.50
- +

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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - 10 µA @ 50 V 50 V 40A -65°C ~ 200°C 1.19 V @ 90 A
1N3210

1N3210

DIODE GEN PURP 200V 15A DO5

GeneSiC Semiconductor

2023 6.59
- +

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1N3210

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 10 µA @ 50 V 200 V 15A -65°C ~ 175°C 1.5 V @ 15 A
1N2273R

1N2273R

DO5 40 AMP SILICON RECTFIER

Solid State Inc.

2960 2.50
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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Stud Mount - - 10 µA @ 100 V 100 V 40A -65°C ~ 200°C 1.19 V @ 90 A
STPSC20065W

STPSC20065W

DIODE SCHOTTKY 650V 20A DO247

STMicroelectronics

3804 6.64
- +

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STPSC20065W

Datenblatt

Tube ECOPACK®2 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1250pF @ 0V, 1MHz 0 ns 300 µA @ 650 V 650 V 20A -40°C ~ 175°C 1.45 V @ 20 A
1N2285

1N2285

DO5 40 AMP SILICON RECTFIER

Solid State Inc.

3480 2.50
- +

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Box RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 10 µA @ 600 V 600 V 40A -65°C ~ 200°C 1.19 V @ 90 A
SCS220AGC17

SCS220AGC17

DIODE SCHOTTKY 650V 20A TO220AC

Rohm Semiconductor

3002 6.69
- +

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Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 730pF @ 1V, 1MHz 0 ns 400 µA @ 600 V 650 V 20A (DC) 175°C 1.55 V @ 20 A
IDM02G120C5XTMA1

IDM02G120C5XTMA1

DIODE SCHOTTKY 1200V 2A TO252-2

Infineon Technologies

3595 2.56
- +

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IDM02G120C5XTMA1

Datenblatt

Tape & Reel (TR),Cut Tape (CT),Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 182pF @ 1V, 1MHz 0 ns 18 µA @ 1200 V 1200 V 2A (DC) -55°C ~ 175°C 1.65 V @ 2 A
VS-65APF12LHM3

VS-65APF12LHM3

DIODES - TO-247-E3

Vishay General Semiconductor - Diodes Division

2969 6.70
- +

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VS-65APF12LHM3

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 480 ns 100 µA @ 1200 V 1200 V 65A -40°C ~ 150°C 1.42 V @ 65 A
60HFR60

60HFR60

DO5 60 AMP SILICON RECTFIER AK

Solid State Inc.

2764 2.95
- +

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60HFR60

Datenblatt

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Stud Mount - - 200 µA @ 600 V 600 V 60A -65°C ~ 150°C 1.3 V @ 60 A
VS-65EPF06LHM3

VS-65EPF06LHM3

DIODES - TO-247-E3

Vishay General Semiconductor - Diodes Division

2060 6.70
- +

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VS-65EPF06LHM3

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 100 µA @ 600 V 600 V 65A -40°C ~ 150°C 1.32 V @ 65 A
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