Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
HS3G V7G DIODE GEN PURP 400V 3A DO214AB Taiwan Semiconductor Corporation	1072	1.02	- + Добавить Немедленный	Datenblatt	Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	80pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	3A	-55°C ~ 150°C	1.3 V @ 3 A
1N5290 FED .47 MA DO35 Solid State Inc.	760	2.50	- + Добавить Немедленный	Datenblatt	Box	RoHS	-	Standard	Active	Through Hole	-	-	-	100 V	-	-55°C ~ 200°C	-
1N6662 RECT , .5AMP 400V DO7 Solid State Inc.	2261	4.95	- + Добавить Немедленный		Box	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	-	400 V	500mA	-	-
MUR460-D1-0000 DIODE GEN PURP 600V 4A DO201AD Yangzhou Yangjie Electronic Technology Co.,Ltd	1050	0.82	- + Добавить Немедленный	Datenblatt	Cut Tape (CT),Tape & Box (TB)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	51pF @ 4V, 1MHz	50 ns	2.5 µA @ 600 V	600 V	4A	-55°C ~ 150°C	1.28 V @ 4 A
S2B ST Rect, 100V, 2A DComponents	36000	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 100 V	100 V	2A	-50°C ~ 150°C	1.15 V @ 2 A
BAT54FSTR RECTIFIER DIODE, SCHOTTKY, 0.2A, Rochester Electronics, LLC	33000	0.03	- + Добавить Немедленный	Datenblatt	Bulk	RoHS	-	-	Active	-	-	-	-	-	-	-	-
BYC405X-400PQ DUAL HYPERFAST POWER DIODE WeEn Semiconductors	4098	1.03	- + Добавить Немедленный		Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	10 µA @ 400 V	400 V	10A	150°C	1.5 V @ 5 A
1N1188A NPN SIL TRANS TO3 Solid State Inc.	700	2.50	- + Добавить Немедленный	Datenblatt	Box	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	10 µA @ 400 V	400 V	40A	-65°C ~ 200°C	1.19 V @ 90 A
WNSC2D101200WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3000	4.97	- + Добавить Немедленный	Datenblatt	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	490pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A	175°C	1.65 V @ 10 A
NTSB30U100CT-1G RECTIFIER DIODE, SCHOTTKY, 2 ELE Rochester Electronics, LLC	4841	0.83	- + Добавить Немедленный	Datenblatt	Bulk	RoHS	-	-	Active	-	-	-	-	-	-	-	-
S2K ST Rect, 800V, 2A DComponents	3000	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1.5 µs	5 µA @ 800 V	800 V	2A	-50°C ~ 150°C	1.15 V @ 2 A
BAV19TR RECTIFIER DIODE, 0.2A, 120V, DO- Rochester Electronics, LLC	30000	0.03	- + Добавить Немедленный	Datenblatt	Bulk	RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	5pF @ 0V, 1MHz	50 ns	100 nA @ 100 V	120 V	200mA	175°C (Max)	1.25 V @ 200 mA
RFN5BM2STL DIODE GEN PURP 200V 5A TO252 Rohm Semiconductor	1492	1.04	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	25 ns	10 µA @ 200 V	200 V	5A	150°C (Max)	980 mV @ 5 A
1N5305 FED 1.2 MA DO35 Solid State Inc.	640	2.50	- + Добавить Немедленный	Datenblatt	Box	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	-	100 V	2.2A (DC)	-55°C ~ 200°C	1.85 V @ 1.76 A
VS-C12ET07T-M3 DIODE SCHOTTKY 650V 12A TO220AC Vishay General Semiconductor - Diodes Division	989	4.98	- + Добавить Немедленный	Datenblatt	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Silicon Carbide Schottky	Active	Through Hole	515pF @ 1V, 1MHz	-	65 µA @ 650 V	650 V	12A (DC)	-55°C ~ 175°C	1.7 V @ 12 A
MBRB30H80CT-1G RECTIFIER DIODE, SCHOTTKY, 1 PHA Rochester Electronics, LLC	1200	0.83	- + Добавить Немедленный	Datenblatt	Bulk	RoHS	-	-	Active	-	-	-	-	-	-	-	-
SRL1J ST Rect, 600V, 1A DComponents	3000	0.09	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	1 µs	1 µA @ 600 V	600 V	1A	-50°C ~ 150°C	1.1 V @ 1 A
PMEG3010ESBCYL PMEG3010ESB - 30V, 1A LOW VF MEG Rochester Electronics, LLC	30000	0.03	- + Добавить Немедленный	Datenblatt	Bulk	RoHS	-	-	Active	-	-	-	-	-	-	-	-
FML-G13S DIODE GEN PURP 300V 5A TO220F-2L Sanken	2992	1.05	- + Добавить Немедленный	Datenblatt	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	50 ns	100 µA @ 300 V	300 V	5A	-40°C ~ 150°C	1.3 V @ 5 A
40HF40 REC 40AMP 400V DO5 Solid State Inc.	500	2.50	- + Добавить Немедленный	Datenblatt	Box	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	100 µA @ 400 V	400 V	40A	-65°C ~ 150°C	1.3 V @ 40 A