Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SR106HB0G DIODE SCHOTTKY 60V 1A DO204AL Taiwan Semiconductor Corporation	3292	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 60 V	60 V	1A	-55°C ~ 150°C	700 mV @ 1 A
ES1ALHR3G DIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation	3351	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER202G B0G DIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation	2878	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 100 V	100 V	2A	-55°C ~ 150°C	1 V @ 2 A
SS22LHRQG DIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation	2341	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR320 B0G DIODE SCHOTTKY 200V 3A DO201AD Taiwan Semiconductor Corporation	3067	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SFAF805G C0G DIODE GEN PURP 300V 8A ITO220AC Taiwan Semiconductor Corporation	2315	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
SR109 B0G DIODE SCHOTTKY 90V 1A DO204AL Taiwan Semiconductor Corporation	2371	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 90 V	90 V	1A	-55°C ~ 150°C	850 mV @ 1 A
ES1ALHRFG DIODE GEN PURP 50V 1A SUB SMA Taiwan Semiconductor Corporation	2913	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER203G B0G DIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation	3450	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 200 V	200 V	2A	-55°C ~ 150°C	1 V @ 2 A
SS22LHRTG DIODE SCHOTTKY 20V 2A SUB SMA Taiwan Semiconductor Corporation	2513	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR320HB0G DIODE SCHOTTKY 200V 3A DO201AD Taiwan Semiconductor Corporation	2212	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 200 V	200 V	3A	-55°C ~ 150°C	950 mV @ 3 A
SFAF805GHC0G DIODE GEN PURP 300V 8A ITO220AC Taiwan Semiconductor Corporation	3524	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 300 V	300 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
ES1BHR3G DIODE GEN PURP 100V 1A DO214AC Taiwan Semiconductor Corporation	2983	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	16pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER204G B0G DIODE GEN PURP 300V 2A DO204AC Taiwan Semiconductor Corporation	2341	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 300 V	300 V	2A	-55°C ~ 150°C	1 V @ 2 A
SS23L MQG DIODE SCHOTTKY 30V 2A SUB SMA Taiwan Semiconductor Corporation	2758	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	2A	-55°C ~ 150°C	500 mV @ 2 A
SR502 B0G DIODE SCHOTTKY 20V 5A DO201AD Taiwan Semiconductor Corporation	2766	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	500 µA @ 20 V	20 V	5A	-55°C ~ 125°C	550 mV @ 5 A
SFAF806GHC0G DIODE GEN PURP 400V 8A ITO220AC Taiwan Semiconductor Corporation	3558	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	60pF @ 4V, 1MHz	35 ns	10 µA @ 400 V	400 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
ES1BL RFG DIODE GEN PURP 100V 1A SUB SMA Taiwan Semiconductor Corporation	3490	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 1V, 1MHz	35 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HER205G B0G DIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation	2778	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	35pF @ 4V, 1MHz	50 ns	5 µA @ 400 V	400 V	2A	-55°C ~ 150°C	1.3 V @ 2 A
SS23L MTG DIODE SCHOTTKY 30V 2A SUB SMA Taiwan Semiconductor Corporation	3417	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 30 V	30 V	2A	-55°C ~ 150°C	500 mV @ 2 A