Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
SR810 A0G DIODE SCHOTTKY 100V 8A DO201AD Taiwan Semiconductor Corporation	2670	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	8A	-55°C ~ 150°C	920 mV @ 8 A
S2AA M2G DIODE GEN PURP 50V 1.5A DO214AC Taiwan Semiconductor Corporation	3046	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	30pF @ 4V, 1MHz	1.5 µs	5 µA @ 50 V	50 V	1.5A	-55°C ~ 150°C	1.1 V @ 1.5 A
SF43G B0G DIODE GEN PURP 150V 4A DO201AD Taiwan Semiconductor Corporation	3218	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	4A	-55°C ~ 150°C	1 V @ 4 A
SFAF1008GHC0G DIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation	2954	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	140pF @ 4V, 1MHz	35 ns	10 µA @ 600 V	600 V	10A	-55°C ~ 150°C	1.7 V @ 10 A
TSSA5U50 M2G DIODE SCHOTTKY 50V 5A DO214AC Taiwan Semiconductor Corporation	3116	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	300 µA @ 50 V	50 V	5A	-55°C ~ 150°C	540 mV @ 5 A
SR810HA0G DIODE SCHOTTKY 100V 8A DO201AD Taiwan Semiconductor Corporation	2718	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 100 V	100 V	8A	-55°C ~ 150°C	920 mV @ 8 A
S2AHM4G DIODE GEN PURP 50V 2A DO214AA Taiwan Semiconductor Corporation	2240	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	30pF @ 4V, 1MHz	1.5 µs	1 µA @ 50 V	50 V	2A	-55°C ~ 150°C	1.15 V @ 2 A
SF43GHB0G DIODE GEN PURP 150V 4A DO201AD Taiwan Semiconductor Corporation	3046	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 150 V	150 V	4A	-55°C ~ 150°C	1 V @ 4 A
SFAF1601G C0G DIODE GEN PURP 50V 16A ITO220AC Taiwan Semiconductor Corporation	2512	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	130pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	16A	-55°C ~ 150°C	975 mV @ 16 A
TSSA5U60 M2G DIODE SCHOTTKY 60V 5A DO214AC Taiwan Semiconductor Corporation	3422	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	300 µA @ 60 V	60 V	5A	-55°C ~ 150°C	560 mV @ 5 A
SR815 A0G DIODE SCHOTTKY 150V 8A DO201AD Taiwan Semiconductor Corporation	3572	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	8A	-55°C ~ 150°C	1.02 V @ 8 A
S2B M4G DIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation	3595	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	30pF @ 4V, 1MHz	1.5 µs	1 µA @ 100 V	100 V	2A	-55°C ~ 150°C	1.15 V @ 2 A
SF44G B0G DIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation	3258	- + Добавить Немедленный	Datenblatt	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	4A	-55°C ~ 150°C	1 V @ 4 A
SFAF1601GHC0G DIODE GEN PURP 50V 16A ITO220AC Taiwan Semiconductor Corporation	3504	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	130pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	16A	-55°C ~ 150°C	975 mV @ 16 A
US1A M2G DIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation	3746	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	15pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A
SR815HA0G DIODE SCHOTTKY 150V 8A DO201AD Taiwan Semiconductor Corporation	2217	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 150 V	150 V	8A	-55°C ~ 150°C	1.02 V @ 8 A
S2BHM4G DIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation	3849	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	30pF @ 4V, 1MHz	1.5 µs	1 µA @ 100 V	100 V	2A	-55°C ~ 150°C	1.15 V @ 2 A
SF44GHB0G DIODE GEN PURP 200V 4A DO201AD Taiwan Semiconductor Corporation	2595	- + Добавить Немедленный	Datenblatt	Bulk	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	100pF @ 4V, 1MHz	35 ns	5 µA @ 200 V	200 V	4A	-55°C ~ 150°C	1 V @ 4 A
SFAF1602G C0G DIODE GEN PURP 100V 16A ITO220AC Taiwan Semiconductor Corporation	3426	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	130pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	16A	-55°C ~ 150°C	975 mV @ 16 A
US1AHM2G DIODE GEN PURP 50V 1A DO214AC Taiwan Semiconductor Corporation	3346	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Surface Mount	15pF @ 4V, 1MHz	50 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	1 V @ 1 A