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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series RoHS Speed Diode Type Part Status Mounting Type Package / Case Capacitance @ Vr, F Supplier Device Package Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature - Junction Voltage - Forward (Vf) (Max) @ If
SR506HA0G

SR506HA0G

DIODE SCHOTTKY 60V 5A DO201AD

Taiwan Semiconductor Corporation

2150 0.00
- +

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Немедленный

SR506HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 5A -55°C ~ 150°C 700 mV @ 5 A
S1DLHM2G

S1DLHM2G

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

2434 0.00
- +

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Немедленный

S1DLHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF32GHB0G

SF32GHB0G

DIODE GEN PURP 100V 3A DO201AD

Taiwan Semiconductor Corporation

3720 0.00
- +

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Немедленный

SF32GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1002GHC0G

SF1002GHC0G

DIODE GEN PURP 100V 10A TO220AB

Taiwan Semiconductor Corporation

3296 0.00
- +

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Немедленный

SF1002GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 100 V 100 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS29LHM2G

SS29LHM2G

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation

3319 0.00
- +

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Немедленный

SS29LHM2G

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1D A0G

UF1D A0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2707 0.00
- +

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Немедленный

UF1D A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
SR509 A0G

SR509 A0G

DIODE SCHOTTKY 90V 5A DO201AD

Taiwan Semiconductor Corporation

3578 0.00
- +

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Немедленный

SR509 A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 5A -55°C ~ 150°C 850 mV @ 5 A
S1DLHMHG

S1DLHMHG

DIODE GEN PURP 200V 1A SUB SMA

Taiwan Semiconductor Corporation

3771 0.00
- +

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Немедленный

S1DLHMHG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 200 V 200 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF33G B0G

SF33G B0G

DIODE GEN PURP 150V 3A DO201AD

Taiwan Semiconductor Corporation

2119 0.00
- +

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Немедленный

SF33G B0G

Datenblatt

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1003G C0G

SF1003G C0G

DIODE GEN PURP 150V 10A TO220AB

Taiwan Semiconductor Corporation

3282 0.00
- +

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Немедленный

SF1003G C0G

Datenblatt

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS29LHMHG

SS29LHMHG

DIODE SCHOTTKY 90V 2A SUB SMA

Taiwan Semiconductor Corporation

2055 0.00
- +

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Немедленный

SS29LHMHG

Datenblatt

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 90 V 90 V 2A -55°C ~ 150°C 850 mV @ 2 A
UF1DHA0G

UF1DHA0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation

2428 0.00
- +

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Немедленный

UF1DHA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1 V @ 1 A
SR509HA0G

SR509HA0G

DIODE SCHOTTKY 90V 5A DO201AD

Taiwan Semiconductor Corporation

3975 0.00
- +

Добавить

Немедленный

SR509HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 5A -55°C ~ 150°C 850 mV @ 5 A
S1GL M2G

S1GL M2G

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

2592 0.00
- +

Добавить

Немедленный

S1GL M2G

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
SF33GHB0G

SF33GHB0G

DIODE GEN PURP 150V 3A DO201AD

Taiwan Semiconductor Corporation

3032 0.00
- +

Добавить

Немедленный

SF33GHB0G

Datenblatt

Bulk Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 80pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 3A -55°C ~ 150°C 950 mV @ 3 A
SF1003GHC0G

SF1003GHC0G

DIODE GEN PURP 150V 10A TO220AB

Taiwan Semiconductor Corporation

3387 0.00
- +

Добавить

Немедленный

SF1003GHC0G

Datenblatt

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 70pF @ 4V, 1MHz 35 ns 10 µA @ 150 V 150 V 10A -55°C ~ 150°C 975 mV @ 5 A
SS310L M2G

SS310L M2G

DIODE SCHOTTKY 100V 3A SUB SMA

Taiwan Semiconductor Corporation

3838 0.00
- +

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Немедленный

SS310L M2G

Datenblatt

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 100 V 100 V 3A -55°C ~ 150°C 850 mV @ 3 A
UF1G A0G

UF1G A0G

DIODE GEN PURP 400V 1A DO204AL

Taiwan Semiconductor Corporation

3029 0.00
- +

Добавить

Немедленный

UF1G A0G

Datenblatt

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 17pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -55°C ~ 150°C 1 V @ 1 A
SR510HA0G

SR510HA0G

DIODE SCHOTTKY 100V 5A DO201AD

Taiwan Semiconductor Corporation

3631 0.00
- +

Добавить

Немедленный

SR510HA0G

Datenblatt

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 5A -55°C ~ 150°C 850 mV @ 5 A
S1GL MHG

S1GL MHG

DIODE GEN PURP 400V 1A SUB SMA

Taiwan Semiconductor Corporation

3068 0.00
- +

Добавить

Немедленный

S1GL MHG

Datenblatt

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 9pF @ 4V, 1MHz 1.8 µs 5 µA @ 400 V 400 V 1A -55°C ~ 175°C 1.1 V @ 1 A
Total 50121 Records«Prev1... 16411642164316441645164616471648...2507Next»
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