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Производитель. Часть #	Акции	А	Таблицы данных	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
MBRF1050HC0G DIODE SCHOTTKY 50V 10A ITO220AC Taiwan Semiconductor Corporation	2140	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 50 V	50 V	10A	-55°C ~ 150°C	800 mV @ 10 A
1N5408TA DIODE GEN PURP 1KV 3A DO201AD SMC Diode Solutions	2575	- + Добавить Немедленный	Datenblatt	Cut Tape (CT),Tape & Box (TB)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	30pF @ 0V, 1MHz	-	5 µA @ 1000 V	1000 V	3A	-65°C ~ 175°C	1.2 V @ 3 A
SFT11G A0G DIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation	2455	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HERAF805G C0G DIODE GEN PURP 400V 8A ITO220AC Taiwan Semiconductor Corporation	2552	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	80pF @ 4V, 1MHz	50 ns	10 µA @ 400 V	400 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
SS12HM2G DIODE SCHOTTKY 20V 1A DO214AC Taiwan Semiconductor Corporation	3395	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Surface Mount	-	-	200 µA @ 20 V	20 V	1A	-55°C ~ 125°C	500 mV @ 1 A
BA157G A0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3318	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
MBRF1060 C0G DIODE SCHOTTKY 60V 10A ITO220AC Taiwan Semiconductor Corporation	2405	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Discontinued at Digi-Key	Through Hole	-	-	100 µA @ 60 V	60 V	10A	-55°C ~ 150°C	800 mV @ 10 A
CD214A-F1100 DIODE GEN PURP 100V 1A DO214AC Bourns Inc.	2071	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	10pF @ 4V, 1MHz	25 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	950 mV @ 1 A
SFT11GHA0G DIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation	3140	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 50 V	50 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HERAF806G C0G DIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation	3487	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	60pF @ 4V, 1MHz	80 ns	10 µA @ 600 V	600 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
SS12L M2G DIODE SCHOTTKY 20V 1A SUB SMA Taiwan Semiconductor Corporation	2015	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	1A	-55°C ~ 125°C	450 mV @ 1 A
BA157GHA0G DIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation	3613	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
MBRF1060HC0G DIODE SCHOTTKY 60V 10A ITO220AC Taiwan Semiconductor Corporation	2020	- + Добавить Немедленный	Datenblatt	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 60 V	60 V	10A	-55°C ~ 150°C	800 mV @ 10 A
NXPSC08650Q DIODE SCHOTTKY 650V 8A TO220AC WeEn Semiconductors	3263	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	260pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	8A	175°C (Max)	1.7 V @ 8 A
SFT12G A0G DIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation	2256	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	20pF @ 4V, 1MHz	35 ns	5 µA @ 100 V	100 V	1A	-55°C ~ 150°C	950 mV @ 1 A
HERAF807G C0G DIODE GEN PURP 800V 8A ITO220AC Taiwan Semiconductor Corporation	3490	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Discontinued at Digi-Key	Through Hole	60pF @ 4V, 1MHz	80 ns	10 µA @ 800 V	800 V	8A	-55°C ~ 150°C	1.7 V @ 8 A
SS12L MHG DIODE SCHOTTKY 20V 1A SUB SMA Taiwan Semiconductor Corporation	2680	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	400 µA @ 20 V	20 V	1A	-55°C ~ 125°C	450 mV @ 1 A
BA158G A0G DIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation	2933	- + Добавить Немедленный	Datenblatt	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	15pF @ 4V, 1MHz	150 ns	5 µA @ 600 V	600 V	1A	-55°C ~ 150°C	1.2 V @ 1 A
MBRF1090 C0G DIODE SCHOTTKY 90V 10A ITO220AC Taiwan Semiconductor Corporation	2622	- + Добавить Немедленный	Datenblatt	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 90 V	90 V	10A	-55°C ~ 150°C	850 mV @ 10 A
NXPSC20650Q DIODE SCHOTTKY 650V 20A TO220AC WeEn Semiconductors	2312	- + Добавить Немедленный	Datenblatt	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	600pF @ 1V, 1MHz	0 ns	500 µA @ 650 V	650 V	20A	175°C (Max)	1.7 V @ 20 A