Diodes - Rectifiers - Arrays - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
WNSC2D20650CJQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	3302	5.46	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	20A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	175°C	Through Hole
MUR3040 DIODE ARRAY GP 400V 15A TO218 onsemi	3383	2.85	- + Добавить Немедленный	Datenblatt	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-
NTE628 R-SI DUAL 600V 12A 250NS NTE Electronics, Inc	308	3.54	- + Добавить Немедленный	Datenblatt	Bag	-	Active	2 Independent	Standard	600 V	6A	1.3 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	10 µA @ 600 V	-65°C ~ 175°C	Through Hole
NTE645 R-DUAL CMN ANODE 600V 16A NTE Electronics, Inc	3010	3.55	- + Добавить Немедленный	Datenblatt	Bag	-	Active	1 Pair Common Anode	Standard	-	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	10 µA @ 600 V	-65°C ~ 175°C	Through Hole
RURG3070CC RECTIFIER DIODE Harris Corporation	2898	2.98	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	1 Pair Common Cathode	Avalanche	700 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 µA @ 700 V	-65°C ~ 175°C	Through Hole
PSDH3060CCL1_T0_00001 TO-247AD-3LD, FRED Panjit International Inc.	3460	4.06	- + Добавить Немедленный	Datenblatt	Tube	-	Active	1 Pair Common Cathode	Standard	600 V	15A	1.8 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	110 ns	100 µA @ 600 V	-55°C ~ 150°C	Through Hole
PSDH3060CCS1_T0_00001 TO-247AD-3LD, FRED Panjit International Inc.	2608	4.06	- + Добавить Немедленный	Datenblatt	Tube	-	Active	1 Pair Common Cathode	Standard	600 V	30A	2.3 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	100 µA @ 600 V	-55°C ~ 150°C	Through Hole
NTE630 R-SI DUAL 600V 16A 250NS NTE Electronics, Inc	239	4.23	- + Добавить Немедленный	Datenblatt	Bag	-	Active	2 Independent	Standard	600 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	10 µA @ 600 V	-65°C ~ 175°C	Through Hole
WNSC2D16650CJQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	2661	4.50	- + Добавить Немедленный	Datenblatt	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	16A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	175°C	Through Hole
NTE6244 R-SI DUAL200PRV 16A NTE Electronics, Inc	104	5.20	- + Добавить Немедленный	Datenblatt	Bag	-	Active	1 Pair Common Anode	Standard	-	16A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	-65°C ~ 150°C	Through Hole
NTE6087 R-DUAL SCHOTTKY 45V 30A NTE Electronics, Inc	3478	5.85	- + Добавить Немедленный	Datenblatt	Bag	-	Active	2 Independent	Schottky	45 V	15A	620 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-55°C ~ 150°C	Through Hole
NTE6088 R-SCHOTTKY 30A 60V DUAL NTE Electronics, Inc	981	6.15	- + Добавить Немедленный	Datenblatt	Bag	-	Active	2 Independent	Schottky	60 V	30A	750 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	-65°C ~ 150°C	Through Hole
NTE6085 R-DUAL SCHOTTKY 16A 45V NTE Electronics, Inc	3410	6.26	- + Добавить Немедленный	Datenblatt	Bag	-	Active	2 Independent	Schottky	-	7.5A	570 mV @ 7.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-65°C ~ 150°C	Through Hole
VS-30CPH03-N3 DIODE ARRAY SCHOTTKY 300V TO247 Vishay General Semiconductor - Diodes Division	500	6.48	- + Добавить Немедленный	Datenblatt	Tube	FRED Pt®	Active	1 Pair Common Cathode	Schottky	300 V	15A	1.25 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 300 V	175°C (Max)	Through Hole
VS-30CPU04-N3 DIODE ARRAY GP 400V 15A TO247AC Vishay General Semiconductor - Diodes Division	500	6.52	- + Добавить Немедленный	Datenblatt	Tube	FRED Pt®	Active	1 Pair Common Cathode	Standard	400 V	15A	1.25 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	46 ns	10 µA @ 400 V	-65°C ~ 175°C	Through Hole
WNSC2D30650WQ DUAL SILICON CARBIDE SCHOTTKY DI WeEn Semiconductors	2616	6.55	- + Добавить Немедленный	Datenblatt	Tube	-	Active	1 Independent	Silicon Carbide Schottky	650 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	175°C	Through Hole
S3D20065D DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	431	6.57	- + Добавить Немедленный	Datenblatt	Tube	-	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	-55°C ~ 175°C	Through Hole
PSDH6060CCL1_T0_00001 TO-247AD-3LD, FRED Panjit International Inc.	2848	6.77	- + Добавить Немедленный	Datenblatt	Tube	-	Active	1 Pair Common Cathode	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	250 µA @ 600 V	-55°C ~ 150°C	Through Hole
PSDH6060CCS1_T0_00001 TO-247AD-3LD, FRED Panjit International Inc.	2393	6.77	- + Добавить Немедленный	Datenblatt	Tube	-	Active	1 Pair Common Cathode	Standard	600 V	30A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	250 µA @ 600 V	-55°C ~ 150°C	Through Hole
NTE6251 R-SI 200V 30A DUAL FAST NTE Electronics, Inc	200	6.82	- + Добавить Немедленный	Datenblatt	Bag	-	Active	1 Pair Common Cathode	Standard	200 V	30A	950 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-55°C ~ 150°C	Through Hole