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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType
GBPC25005W

GBPC25005W

BRIDGE RECT 1P 50V 25A GBPC-W

onsemi

3114 1.00
- +

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Немедленный

GBPC25005W

Datenblatt

Bulk,Tray - Active Single Phase Standard 50 V 25 A - 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
GBPC50005T

GBPC50005T

BRIDGE RECT 1PHASE 50V 50A GBPC

GeneSiC Semiconductor

2881 4.02
- +

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Немедленный

GBPC50005T

Datenblatt

Bulk - Active Single Phase Standard 50 V 50 A 1.2 V @ 25 A 5 µA @ 50 V -55°C ~ 150°C (TJ) QC Terminal
GBPC5010T

GBPC5010T

BRIDGE RECT 1PHASE 1KV 50A GBPC

GeneSiC Semiconductor

3061 4.02
- +

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Немедленный

GBPC5010T

Datenblatt

Bulk - Active Single Phase Standard 1 kV 50 A 1.1 V @ 25 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal
GBPC5001T

GBPC5001T

BRIDGE RECT 1PHASE 100V 50A GBPC

GeneSiC Semiconductor

2662 4.02
- +

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Немедленный

GBPC5001T

Datenblatt

Bulk - Active Single Phase Standard 100 V 50 A 1.2 V @ 25 A 5 µA @ 100 V -55°C ~ 150°C (TJ) QC Terminal
GBPC5002T

GBPC5002T

BRIDGE RECT 1PHASE 200V 50A GBPC

GeneSiC Semiconductor

2126 4.02
- +

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Немедленный

GBPC5002T

Datenblatt

Bulk - Active Single Phase Standard 200 V 50 A 1.2 V @ 25 A 5 µA @ 200 V -55°C ~ 150°C (TJ) QC Terminal
GBPC5004T

GBPC5004T

BRIDGE RECT 1PHASE 400V 50A GBPC

GeneSiC Semiconductor

2647 4.02
- +

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Немедленный

GBPC5004T

Datenblatt

Bulk - Active Single Phase Standard 400 V 50 A 1.2 V @ 25 A 5 µA @ 400 V -55°C ~ 150°C (TJ) QC Terminal
GBPC5006T

GBPC5006T

BRIDGE RECT 1PHASE 600V 50A GBPC

GeneSiC Semiconductor

2856 4.02
- +

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Немедленный

GBPC5006T

Datenblatt

Bulk - Active Single Phase Standard 600 V 50 A 1.2 V @ 25 A 5 µA @ 600 V -55°C ~ 150°C (TJ) QC Terminal
GBPC5008T

GBPC5008T

BRIDGE RECT 1PHASE 800V 50A GBPC

GeneSiC Semiconductor

2339 4.02
- +

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Немедленный

GBPC5008T

Datenblatt

Bulk - Active Single Phase Standard 800 V 50 A 1.2 V @ 25 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal
GBPC50005W

GBPC50005W

BRIDGE RECT 1P 50V 50A GBPC-W

GeneSiC Semiconductor

3128 4.02
- +

Добавить

Немедленный

GBPC50005W

Datenblatt

Bulk - Active Single Phase Standard 50 V 50 A 1.2 V @ 25 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
GBPC5001W

GBPC5001W

BRIDGE RECT 1P 100V 50A GBPC-W

GeneSiC Semiconductor

2623 4.02
- +

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Немедленный

GBPC5001W

Datenblatt

Bulk - Active Single Phase Standard 100 V 50 A 1.2 V @ 25 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
GBPC5002W

GBPC5002W

BRIDGE RECT 1P 200V 50A GBPC-W

GeneSiC Semiconductor

3731 4.02
- +

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Немедленный

GBPC5002W

Datenblatt

Bulk - Active Single Phase Standard 200 V 50 A 1.2 V @ 25 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GBPC5004W

GBPC5004W

BRIDGE RECT 1P 400V 50A GBPC-W

GeneSiC Semiconductor

2784 4.02
- +

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Немедленный

GBPC5004W

Datenblatt

Bulk - Active Single Phase Standard 400 V 50 A 1.2 V @ 25 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
GBPC5006W

GBPC5006W

BRIDGE RECT 1P 600V 50A GBPC-W

GeneSiC Semiconductor

2730 4.02
- +

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Немедленный

GBPC5006W

Datenblatt

Bulk - Active Single Phase Standard 600 V 50 A 1.2 V @ 25 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
GBPC5008W

GBPC5008W

BRIDGE RECT 1P 800V 50A GBPC-W

GeneSiC Semiconductor

3296 4.02
- +

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Немедленный

GBPC5008W

Datenblatt

Bulk - Active Single Phase Standard 800 V 50 A 1.2 V @ 25 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
GBPC5010W

GBPC5010W

BRIDGE RECT 1P 1KV 50A GBPC-W

GeneSiC Semiconductor

2291 4.02
- +

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Немедленный

GBPC5010W

Datenblatt

Bulk - Active Single Phase Standard 1 kV 50 A 1.2 V @ 25 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
GBPC12005W-E4/51

GBPC12005W-E4/51

BRIDGE RECT 1P 50V 12A GBPC-W

Vishay General Semiconductor - Diodes Division

3565 4.05
- +

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Немедленный

GBPC12005W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 50 V 12 A 1.1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
GBPC1204W-E4/51

GBPC1204W-E4/51

BRIDGE RECT 1P 400V 12A GBPC-W

Vishay General Semiconductor - Diodes Division

2953 4.05
- +

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Немедленный

GBPC1204W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 400 V 12 A 1.1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
GBPC1208-E4/51

GBPC1208-E4/51

BRIDGE RECT 1PHASE 800V 12A GBPC

Vishay General Semiconductor - Diodes Division

2070 4.05
- +

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Немедленный

GBPC1208-E4/51

Datenblatt

Bulk - Active Single Phase Standard 800 V 12 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal
GBPC1208W-E4/51

GBPC1208W-E4/51

BRIDGE RECT 1P 800V 12A GBPC-W

Vishay General Semiconductor - Diodes Division

3490 4.05
- +

Добавить

Немедленный

GBPC1208W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 800 V 12 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
GBPC1210W-E4/51

GBPC1210W-E4/51

BRIDGE RECT 1P 1KV 12A GBPC-W

Vishay General Semiconductor - Diodes Division

3241 4.05
- +

Добавить

Немедленный

GBPC1210W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 1 kV 12 A 1.1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
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