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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType
VS-KBPC801

VS-KBPC801

BRIDGE RECTIFIER 100V 8.0A D-72

Vishay General Semiconductor - Diodes Division

3834 4.63
- +

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Немедленный

VS-KBPC801

Datenblatt

Bulk VS-KBPC8 Active Single Phase Standard 100 V 8 A 1 V @ 3 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
DB25-06

DB25-06

3PH BRIDGE DB 600V 25A

Diotec Semiconductor

2999 4.34
- +

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Немедленный

DB25-06

Datenblatt

Box - Active Three Phase Standard 600 V 25 A 1.05 V @ 12.5 A 10 µA @ 600 V -50°C ~ 150°C (TJ) Chassis Mount
VS-KBPC804

VS-KBPC804

BRIDGE RECTIFIER 400V 8.0A D-72

Vishay General Semiconductor - Diodes Division

3910 4.82
- +

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Немедленный

VS-KBPC804

Datenblatt

Bulk VS-KBPC8 Active Single Phase Standard 400 V 8 A 1 V @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole
KBU8J-E4/51

KBU8J-E4/51

BRIDGE RECT 1PHASE 600V 8A KBU

Vishay General Semiconductor - Diodes Division

2047 4.82
- +

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Немедленный

KBU8J-E4/51

Datenblatt

Tray - Active Single Phase Standard 600 V 8 A 1 V @ 8 A 10 µA @ 600 V -50°C ~ 150°C (TJ) Through Hole
DB25-12

DB25-12

3PH BRIDGE DB 1200V 25A

Diotec Semiconductor

2896 4.96
- +

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Немедленный

DB25-12

Datenblatt

Box - Active Three Phase Standard 1.2 kV 25 A 1.05 V @ 12.5 A 10 µA @ 1200 V -50°C ~ 150°C (TJ) Chassis Mount
DB35-16

DB35-16

3PH BRIDGE DB 1600V 35A

Diotec Semiconductor

3479 4.96
- +

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Немедленный

DB35-16

Datenblatt

Box - Active Three Phase Standard 1.6 kV 35 A 1.05 V @ 17.5 A 10 µA @ 1600 V -50°C ~ 150°C (TJ) Chassis Mount
GBPC12005-E4/51

GBPC12005-E4/51

BRIDGE RECT 1P 50V 12A GBPC-W

Vishay General Semiconductor - Diodes Division

2503 5.30
- +

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Немедленный

GBPC12005-E4/51

Datenblatt

Bulk - Active Single Phase Standard 50 V 12 A 1.1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
GBPC1208W

GBPC1208W

BRIDGE RECT 1PH 800KV 12A GBPC-W

onsemi

2377 5.01
- +

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Немедленный

GBPC1208W

Datenblatt

Bulk,Bulk - Active Single Phase Standard 800 V 12 A 1.1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
SK3546

SK3546

DIODE ARRAY

Harris Corporation

2376 0.00
- +

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Немедленный

SK3546

Datenblatt

Bulk - Active Single Phase Standard - - - - - -
VS-GBPC2502W

VS-GBPC2502W

RECT BRIDGE 1-PH 200V 25A GBPC-W

Vishay General Semiconductor - Diodes Division

2750 6.62
- +

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Немедленный

VS-GBPC2502W

Datenblatt

Bulk VS-GBPC Active Single Phase Standard 200 V 25 A - 2 mA @ 200 V -55°C ~ 150°C (TJ) Through Hole
VS-GBPC3502W

VS-GBPC3502W

BRIDGE RECT 1P 200V 35A GBPC-W

Vishay General Semiconductor - Diodes Division

2619 7.07
- +

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Немедленный

VS-GBPC3502W

Datenblatt

Tray VS-GBPC Active Single Phase Standard 200 V 35 A - 2 mA @ 200 V -55°C ~ 150°C (TJ) Through Hole
VS-GBPC2508W

VS-GBPC2508W

BRIDGE RECT 1P 800V 25A GBPC-W

Vishay General Semiconductor - Diodes Division

2848 7.12
- +

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Немедленный

VS-GBPC2508W

Datenblatt

Tray VS-GBPC Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 2 mA @ 800 V -55°C ~ 150°C (TJ) Through Hole
GBO25-12NO1

GBO25-12NO1

BRIDGE RECT 1P 1.2KV 25A 4SIP

IXYS

2110 7.58
- +

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Немедленный

GBO25-12NO1

Datenblatt

Tube - Active Single Phase Standard 1.2 kV 25 A 1.1 V @ 12.5 A 50 µA @ 1200 V -40°C ~ 150°C (TJ) Through Hole
GBO25-16NO1

GBO25-16NO1

BRIDGE RECT 1P 1.6KV 25A 4SIP

IXYS

2823 7.64
- +

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Немедленный

GBO25-16NO1

Datenblatt

Box - Active Single Phase Standard 1.6 kV 25 A 1.1 V @ 12.5 A 50 µA @ 1600 V -40°C ~ 150°C (TJ) Through Hole
DLA100IM1200TZ-TUB

DLA100IM1200TZ-TUB

RECTIFIER 1200V 100A TO-268AA

IXYS

2380 7.84
- +

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Немедленный

DLA100IM1200TZ-TUB

Datenblatt

Tube - Active Single Phase Standard 1.2 kV 100 A 1.34 V @ 100 A 20 µA @ 1200 V -55°C ~ 150°C (TJ) Surface Mount
NTE5327W

NTE5327W

R-SI BRIDGE 800V 25A

NTE Electronics, Inc

3072 8.20
- +

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Немедленный

NTE5327W

Datenblatt

Bag - Active Single Phase Standard 800 V 25 A 1.2 V @ 12.5 A 10 µA @ 800 V -55°C ~ 125°C (TJ) Through Hole
UC1610J

UC1610J

BRIDGE RECTIFIER DIODE, SCHOTTKY

Texas Instruments

2506 7.35
- +

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Немедленный

UC1610J

Datenblatt

Bulk * Active - - - - - - - -
NTE53504

NTE53504

3-PHASE BRIDGE 400V 35A

NTE Electronics, Inc

2530 8.89
- +

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Немедленный

NTE53504

Datenblatt

Bag - Active Three Phase Standard 400 V 35 A 1.19 V @ 40 A 10 µA @ 400 V -40°C ~ 150°C (TJ) QC Terminal
FUO22-12N

FUO22-12N

BRIDGE RECT 3P 1.2KV 28A I4-PAC

IXYS

3359 9.35
- +

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Немедленный

FUO22-12N

Datenblatt

Tube - Active Three Phase Standard 1.2 kV 28 A 1.62 V @ 30 A 10 µA @ 1200 V -55°C ~ 175°C (TJ) Through Hole
DMA40U1800GU

DMA40U1800GU

POWER DIODE DISCRETES-RECTIFIER

IXYS

2108 12.22
- +

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Немедленный

Tube - Active Single Phase Standard 1.8 kV 40 A 1.28 V @ 30 A 40 µA @ 1800 V -40°C ~ 175°C (TJ) Through Hole
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