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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType
GSIB15A60-E3/45

GSIB15A60-E3/45

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division

3076 2.70
- +

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Немедленный

GSIB15A60-E3/45

Datenblatt

Tube - Active Single Phase Standard 600 V 3.5 A 1 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
GSIB2080-E3/45

GSIB2080-E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division

3016 2.89
- +

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Немедленный

GSIB2080-E3/45

Datenblatt

Tube - Active Single Phase Standard 800 V 3.5 A 1 V @ 10 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
GSIB2520-E3/45

GSIB2520-E3/45

BRIDGE RECT 1P 200V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division

3851 2.92
- +

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Немедленный

GSIB2520-E3/45

Datenblatt

Tube - Active Single Phase Standard 200 V 3.5 A 1 V @ 12.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
BU2006-E3/45

BU2006-E3/45

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division

2206 3.04
- +

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Немедленный

BU2006-E3/45

Datenblatt

Bulk - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
BU2008-E3/51

BU2008-E3/51

BRIDGE RECT 1P 800V 3.5A BU

Vishay General Semiconductor - Diodes Division

3477 3.04
- +

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Немедленный

BU2008-E3/51

Datenblatt

Bulk - Active Single Phase Standard 800 V 3.5 A 1.05 V @ 10 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole
KBU8M-E4/51

KBU8M-E4/51

BRIDGE RECT 1PHASE 1KV 8A KBU

Vishay General Semiconductor - Diodes Division

2769 4.82
- +

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Немедленный

KBU8M-E4/51

Datenblatt

Bulk - Active Single Phase Standard 1 kV 8 A 1 V @ 8 A 10 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole
KBU6B-E4/51

KBU6B-E4/51

BRIDGE RECT 1PHASE 100V 6A KBU

Vishay General Semiconductor - Diodes Division

3411 4.82
- +

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Немедленный

KBU6B-E4/51

Datenblatt

Bulk - Active Single Phase Standard 100 V 6 A 1 V @ 6 A 5 µA @ 100 V -50°C ~ 150°C (TJ) Through Hole
KBU6M-E4/51

KBU6M-E4/51

BRIDGE RECT 1PHASE 1KV 6A KBU

Vishay General Semiconductor - Diodes Division

2751 4.82
- +

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Немедленный

KBU6M-E4/51

Datenblatt

Bulk - Active Single Phase Standard 1 kV 6 A 1 V @ 6 A 5 µA @ 1000 V -50°C ~ 150°C (TJ) Through Hole
GBPC2502W-E4/51

GBPC2502W-E4/51

BRIDGE RECT 1P 200V 25A GBPC-W

Vishay General Semiconductor - Diodes Division

3522 5.30
- +

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Немедленный

GBPC2502W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 200 V 25 A 1.1 V @ 12.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GBPC1201W-E4/51

GBPC1201W-E4/51

BRIDGE RECT 1P 100V 12A GBPC-W

Vishay General Semiconductor - Diodes Division

3358 5.30
- +

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Немедленный

GBPC1201W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 100 V 12 A 1.1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole
GBPC1202W-E4/51

GBPC1202W-E4/51

BRIDGE RECT 1P 200V 12A GBPC-W

Vishay General Semiconductor - Diodes Division

2222 5.30
- +

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Немедленный

GBPC1202W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 200 V 12 A 1.1 V @ 6 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GBPC1206W-E4/51

GBPC1206W-E4/51

BRIDGE RECT 1P 600V 12A GBPC-W

Vishay General Semiconductor - Diodes Division

3037 5.30
- +

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Немедленный

GBPC1206W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 600 V 12 A 1.1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
GBPC1502W-E4/51

GBPC1502W-E4/51

BRIDGE RECT 1P 200V 15A GBPC-W

Vishay General Semiconductor - Diodes Division

2519 5.30
- +

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Немедленный

GBPC1502W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 200 V 15 A 1.1 V @ 7.5 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole
GBPC1510-E4/51

GBPC1510-E4/51

BRIDGE RECT 1PHASE 1KV 15A GBPC

Vishay General Semiconductor - Diodes Division

3484 5.30
- +

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Немедленный

GBPC1510-E4/51

Datenblatt

Bulk - Active Single Phase Standard 1 kV 15 A 1.1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) QC Terminal
GBPC1510W-E4/51

GBPC1510W-E4/51

BRIDGE RECT 1P 1KV 15A GBPC-W

Vishay General Semiconductor - Diodes Division

3861 5.30
- +

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Немедленный

GBPC1510W-E4/51

Datenblatt

Bulk - Active Single Phase Standard 1 kV 15 A 1.1 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole
GBPC2508-E4/51

GBPC2508-E4/51

BRIDGE RECT 1PHASE 800V 25A GBPC

Vishay General Semiconductor - Diodes Division

2855 5.30
- +

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Немедленный

GBPC2508-E4/51

Datenblatt

Bulk - Active Single Phase Standard 800 V 25 A 1.1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) QC Terminal
BU2506-E3/45

BU2506-E3/45

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division

780 2.99
- +

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Немедленный

BU2506-E3/45

Datenblatt

Bulk - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole
GBPC35005

GBPC35005

BRIDGE RECT 1PHASE 50V 35A GBPC

onsemi

3480 5.47
- +

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Немедленный

GBPC35005

Datenblatt

Bulk - Active Single Phase Standard 50 V 35 A 1.1 V @ 17.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) QC Terminal
GBPC35005W

GBPC35005W

BRIDGE RECT 1P 50V 35A GBPC-W

onsemi

3268 5.83
- +

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Немедленный

GBPC35005W

Datenblatt

Tray - Active Single Phase Standard 50 V 35 A 1.1 V @ 17.5 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole
VS-GBPC3504W

VS-GBPC3504W

BRIDGE RECT 1P 400V 35A GBPC-W

Vishay General Semiconductor - Diodes Division

2693 7.17
- +

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Немедленный

VS-GBPC3504W

Datenblatt

Bulk VS-GBPC Active Single Phase Standard 400 V 35 A 1.1 V @ 17.5 A 2 mA @ 400 V -55°C ~ 150°C (TJ) Through Hole
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