Transistors - JFETs - Element(Гонконг) Technology Co., Ltd.

Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	ProductStatus	FETType	Voltage-Breakdown(V(BR)GSS)	DraintoSourceVoltage(Vdss)	Current-Drain(Idss)@Vds(Vgs=0)	CurrentDrain(Id)-Max	Voltage-Cutoff(VGSoff)@Id	InputCapacitance(Ciss)(Max)@Vds	Resistance-RDS(On)	Power-Max	OperatingTemperature	MountingType
2SK208-Y(TE85L,F) JFET N-CH 50V S-MINI Toshiba Semiconductor and Storage	3232	0.52	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	50 V	-	1.2 mA @ 10 V	6.5 mA	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount
2SK879-GR(TE85L,F) JFET N-CH 0.1W USM Toshiba Semiconductor and Storage	2464	0.44	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	-	-	2.6 mA @ 10 V	-	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount
2SK879-Y(TE85L,F) JFET N-CH 0.1W USM Toshiba Semiconductor and Storage	2224	0.44	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	-	-	1.2 mA @ 10 V	-	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount
2SK880-BL(TE85L,F) JFET N-CH 50V 0.1W USM Toshiba Semiconductor and Storage	2662	0.62	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	50 V	-	6 mA @ 10 V	-	1.5 V @ 100 nA	13pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount
2SK2145-BL(TE85L,F JFET N-CH 50V SMV Toshiba Semiconductor and Storage	3021	0.71	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual)	-	-	6 mA @ 10 V	-	200 mV @ 100 nA	13pF @ 10V	-	300 mW	125°C (TJ)	Surface Mount
2SK2145-Y(TE85L,F) MOSFET 2N-CH JFET 50V SMV Toshiba Semiconductor and Storage	3118	0.71	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual)	-	-	1.2 mA @ 10 V	-	200 mV @ 100 nA	13pF @ 10V	-	300 mW	125°C (TJ)	Surface Mount
2SK208-R(TE85L,F) JFET N-CH 50V S-MINI Toshiba Semiconductor and Storage	3553	0.52	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	50 V	-	300 µA @ 10 V	6.5 mA	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount
2SK208-GR(TE85L,F) JFET N-CH 50V SC59 Toshiba Semiconductor and Storage	948	0.52	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	50 V	-	2.6 mA @ 10 V	6.5 mA	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount
2SK880-Y(TE85L,F) JFET N-CH 50V 0.1W USM Toshiba Semiconductor and Storage	2164	0.56	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	50 V	-	1.2 mA @ 10 V	-	1.5 V @ 100 nA	13pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount
2SK3320-BL(TE85L,F JFET DUAL N-CH USV Toshiba Semiconductor and Storage	3930	0.79	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	-	-	6 mA @ 10 V	-	200 mV @ 100 nA	13pF @ 10V	-	200 mW	125°C (TJ)	Surface Mount
2SK880GRTE85LF JFET N-CH 50V 0.1W USM Toshiba Semiconductor and Storage	3875	0.62	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	50 V	-	2.6 mA @ 10 V	-	1.5 V @ 100 nA	13pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount
2SK208-O(TE85L,F) JFET N-CH 50V SC59 Toshiba Semiconductor and Storage	2876	0.52	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	N-Channel	50 V	-	600 µA @ 10 V	6.5 mA	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount
2SK2145-GR(TE85L,F MOSFET 2N-CH JFET 50V SMV Toshiba Semiconductor and Storage	2364	0.71	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	-	Active	2 N-Channel (Dual)	-	-	2.6 mA @ 10 V	-	200 mV @ 100 nA	13pF @ 10V	-	300 mW	125°C (TJ)	Surface Mount

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