Transistors - IGBTs - Modules - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	Series	ProductStatus	IGBTType	Configuration	Voltage-CollectorEmitterBreakdown(Max)	Current-Collector(Ic)(Max)	Power-Max	Vce(on)(Max)@VgeIc	Current-CollectorCutoff(Max)	InputCapacitance(Cies)@Vce	Input	NTCThermistor	OperatingTemperature	MountingType
VS-GT100DA120UF IGBT MOD 1200V 187A 890W SOT227 Vishay General Semiconductor - Diodes Division	116	42.71	- + Добавить Немедленный	Datenblatt	Bulk	HEXFRED®	Active	Trench	Single	1200 V	187 A	890 W	2.55V @ 15V, 100A	100 µA	6.15 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GT80DA120U IGBT MOD 1200V 139A 658W SOT227 Vishay General Semiconductor - Diodes Division	138	38.99	- + Добавить Немедленный	Datenblatt	Bulk	HEXFRED®	Active	Trench	Single	1200 V	139 A	658 W	2.55V @ 15V, 80A	100 µA	4.4 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GT90SA120U SOT-227 - SINGLE SWITCH IGBT Vishay General Semiconductor - Diodes Division	106	36.83	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Trench Field Stop	Single	1200 V	169 A	781 W	2.6V @ 15V, 75A	100 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GT75YF120NT ECONO - 4 PACK IGBT Vishay General Semiconductor - Diodes Division	2325	139.98	- + Добавить Немедленный	Datenblatt	Box	-	Active	Trench Field Stop	Full Bridge	1200 V	118 A	431 W	2.6V @ 15V, 75A	100 µA	-	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GT75YF120UT ECONO - 4 PACK IGBT Vishay General Semiconductor - Diodes Division	3482	146.14	- + Добавить Немедленный	Datenblatt	Box	-	Active	Trench Field Stop	Full Bridge	1200 V	118 A	431 W	2.6V @ 15V, 75A	100 µA	-	Standard	Yes	-40°C ~ 150°C (TJ)	Chassis Mount
VS-ETF150Y65N IGBT MOD 650V 201A 600W Vishay General Semiconductor - Diodes Division	3033	68.56	- + Добавить Немедленный		Box	FRED Pt®	Obsolete	NPT	Half Bridge Inverter	650 V	201 A	600 W	2.17V @ 15V, 150A	-	-	Standard	Yes	175°C (TJ)	-
CPV364M4U IGBT MODULE 600V 20A 63W IMS-2 Vishay General Semiconductor - Diodes Division	3991	0.00	- + Добавить Немедленный		Bulk	-	Active	-	Three Phase Inverter	600 V	20 A	63 W	1.84V @ 15V, 20A	250 µA	2.1 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole
GA400TD25S IGBT MOD 250V 400A INT-A-PAK Vishay General Semiconductor - Diodes Division	3906	0.00	- + Добавить Немедленный	Datenblatt	Tube	-	Obsolete	-	Half Bridge	250 V	400 A	1350 W	1.6V @ 15V, 400A	500 µA	36 nF @ 30 V	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
GA200SA60U IGBT MOD 600V 200A 500W SOT227B Vishay General Semiconductor - Diodes Division	2060	0.00	- + Добавить Немедленный	Datenblatt	-	-	Obsolete	-	Single	600 V	200 A	500 W	1.9V @ 15V, 100A	1 mA	16.5 nF @ 30 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
GA200SA60S IGBT MOD 600V 200A 630W SOT227B Vishay General Semiconductor - Diodes Division	3635	0.00	- + Добавить Немедленный	Datenblatt	-	-	Obsolete	-	Single	600 V	200 A	630 W	1.3V @ 15V, 100A	1 mA	16.25 nF @ 30 V	Standard	No	-55°C ~ 150°C (TJ)	Chassis Mount
VS-GT55NA120UX SOT-227 - HIGH SIDE CHOPPER IGBT Vishay General Semiconductor - Diodes Division	2064	37.49	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Trench Field Stop	Single Chopper	1200 V	68 A	291 W	2.8V @ 15V, 50A	50 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GT55LA120UX SOT-227 - LOW SIDE CHOPPER IGBT Vishay General Semiconductor - Diodes Division	3449	37.49	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Trench Field Stop	Single Chopper	1200 V	68 A	291 W	2.8V @ 15V, 50A	50 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-GT90DA120U SOT-227 - SINGLE SWITCH IGBT + A Vishay General Semiconductor - Diodes Division	3054	39.14	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Trench Field Stop	Single	1200 V	169 A	781 W	2.6V @ 15V, 75A	100 µA	-	Standard	No	-40°C ~ 150°C (TJ)	Chassis Mount
VS-ENV020F65U POWER MODULE Vishay General Semiconductor - Diodes Division	3725	39.85	- + Добавить Немедленный	Datenblatt	Box	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
VS-ENV020M120M POWER MODULE Vishay General Semiconductor - Diodes Division	2040	43.64	- + Добавить Немедленный	Datenblatt	Box	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
VS-ENY050C60 POWER MODULE Vishay General Semiconductor - Diodes Division	3024	54.22	- + Добавить Немедленный	Datenblatt	Box	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
VS-40MT120PHAPBF MTP - HALF BRIDGE IGBT Vishay General Semiconductor - Diodes Division	3885	63.77	- + Добавить Немедленный	Datenblatt	Tube	-	Active	Trench Field Stop	Half Bridge	1200 V	75 A	305 W	2.65V @ 15V, 40A	50 µA	3.2 nF @ 25 V	Standard	No	-40°C ~ 150°C (TJ)	Through Hole
VS-GT140DA60U IGBT MOD 600V 200A 652W SOT227 Vishay General Semiconductor - Diodes Division	160	68.06	- + Добавить Немедленный	Datenblatt	Bulk	-	Active	Trench	Single	600 V	200 A	652 W	2V @ 15V, 100A	100 µA	-	Standard	No	-40°C ~ 175°C (TJ)	Chassis Mount
VS-ENM040M60P POWER MODULE Vishay General Semiconductor - Diodes Division	2999	64.71	- + Добавить Немедленный	Datenblatt	Box	*	Active	-	-	-	-	-	-	-	-	-	-	-	-
VS-ENZ025C60N POWER MODULE Vishay General Semiconductor - Diodes Division	3924	64.71	- + Добавить Немедленный	Datenblatt	Box	*	Active	-	-	-	-	-	-	-	-	-	-	-	-