Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
NTE491SMMOSFET N-CHANNEL 60V 115MA SOT23 |
1252 | 0.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 115mA (Ta) | 4.5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50 pF @ 25 V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
2N7000MOSFET N-CHANNEL 60V 200MA TO92 |
4805 | 0.40 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | - | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | - | 60 pF @ 25 V | - | - | - | Through Hole |
![]() |
NTE2396AMOSFET N-CHANNEL 100V 33A TO220 |
1340 | 1.74 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 1960 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
NTE492MOSFET N-CHANNEL 200V 250MA TO92 |
440 | 2.28 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 250mA (Tj) | 10V | - | 3V @ 1mA | - | ±20V | 60 pF @ 25 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
NTE455MOSFET-DUAL GATE N-CH |
239 | 2.98 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 25mA | - | - | - | - | ±10V | 3500 pF @ 10 V | Standard | 200mW (Ta) | -55°C ~ 125°C | Surface Mount |
![]() |
NTE2374MOSFET N-CHANNEL 200V 18A TO220 |
698 | 3.75 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 31A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
NTE2987MOSFET N-CH 100V 20A TO220 |
300 | 4.65 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A | 5V | 120mOhm @ 10A, 5V | 2.5V @ 250µA | 30 nC @ 5 V | ±15V | 1500 pF @ 25 V | Logic Level Gate, 4V Drive | 105W (Tc) | 175°C (TJ) | Through Hole |
![]() |
NTE2396MOSFET N-CHANNEL 100V 28A TO220 |
348 | 5.41 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 69 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
NTE2395MOSFET N-CHANNEL 60V 50A TO220 |
125 | 5.47 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
NTE491TMOSFET N-CHANNEL 60V 310MA TO237 |
596 | 5.64 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 310mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | +15V, -300mV | 60 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
NTE2397MOSFET N-CHANNEL 400V 10A TO220 |
511 | 5.81 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
NTE2935MOSFET N-CH 500V 6.2A TO3PML |
794 | 6.26 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6.2A (Tc) | 10V | 850mOhm @ 3.1A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±30V | 1550 pF @ 25 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
NTE2946MOSFET-PWR N-CHAN ENHAN |
362 | 6.42 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.6A | 10V | 850mOhm @ 4A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±20V | 1510 pF @ 25 V | Standard | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
NTE66MOSFET N-CHANNEL 100V 14A TO220 |
432 | 6.44 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.3A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 77W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
NTE2380MOSFET N-CHANNEL 500V 2.5A TO220 |
521 | 6.65 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 3Ohm @ 1A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C | Through Hole |
![]() |
NTE2398MOSFET N-CHANNEL 500V 4.5A TO220 |
290 | 6.71 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 610 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
NTE2378MOSFET N-CHANNEL 900V 5A TO3P |
104 | 6.98 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 5A (Ta) | 10V | 3.6Ohm @ 2A, 10V | 3V @ 1mA | - | ±30V | 700 pF @ 20 V | - | 120W (Tc) | 150°C | Through Hole |
![]() |
NTE2933MOSFET N-CHANNEL 400V 8A TO3PML |
168 | 7.10 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 8A (Tc) | 10V | 550mOhm @ 4A, 10V | 4V @ 250µA | 75 nC @ 10 V | ±30V | 1530 pF @ 25 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
NTE2373MOSFET P-CHANNEL 200V 11A TO220 |
220 | 7.15 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
NTE2385MOSFET N-CHANNEL 500V 8A TO220 |
841 | 7.18 |
ДобавитьНемедленный |
![]() Datenblatt |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |