Manufacturer | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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PMWD18UN118SMALL SIGNAL N-CHANNEL MOSFET |
5000 | 0.06 |
ДобавитьНемедленный |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BUK755R4-100E127N-CHANNEL POWER MOSFET |
3644 | 1.00 |
ДобавитьНемедленный |
![]() Datenblatt |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 5.2mOhm @ 25A, 10V | 4V @ 1mA | 180 nC @ 10 V | ±20V | 11810 pF @ 25 V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |