Manufacturer | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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S2M0080120DMOSFET SILICON CARBIDE SIC 1200V |
3350 | 15.48 |
ДобавитьНемедленный |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +25V, -10V | 1324 pF @ 1000 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
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S2M0080120KMOSFET SILICON CARBIDE SIC 1200V |
3343 | 15.93 |
ДобавитьНемедленный |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 4V @ 10mA | 54 nC @ 20 V | +25V, -10V | 1324 pF @ 1000 V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
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S2M0025120DMOSFET SILICON CARBIDE SIC 1200V |
3143 | 46.13 |
ДобавитьНемедленный |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tj) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 130 nC @ 20 V | +25V, -10V | 4402 pF @ 1000 V | - | 446W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
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S2M0025120KMOSFET SILICON CARBIDE SIC 1200V |
3671 | 46.51 |
ДобавитьНемедленный |
Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 63A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 130 nC @ 20 V | +25V, -10V | 4402 pF @ 1000 V | - | 446W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |