Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IXTH11P50MOSFET P-CH 500V 11A TO247 |
300 | 12.50 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 11A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 5V @ 250µA | 130 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IXTH90P10PMOSFET P-CH 100V 90A TO247 |
4240 | 12.93 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 90A (Tc) | 10V | 25mOhm @ 45A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 5800 pF @ 25 V | - | 462W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IXTH48P20PMOSFET P-CH 200V 48A TO247 |
4857 | 12.93 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 48A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4.5V @ 250µA | 103 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 462W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXTA08N100D2MOSFET N-CH 1000V 800MA TO263 |
5035 | 2.71 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 800mA (Tc) | - | 21Ohm @ 400mA, 0V | - | 14.6 nC @ 5 V | ±20V | 325 pF @ 25 V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IXTY01N100MOSFET N-CH 1000V 100MA TO252AA |
7059 | 2.80 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 100mA (Tc) | 10V | 80Ohm @ 100mA, 10V | 4.5V @ 25µA | 6.9 nC @ 10 V | ±20V | 54 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IXTY01N100DMOSFET N-CH 1000V 400MA TO252AA |
3303 | 3.24 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 400mA (Tc) | 0V | 80Ohm @ 50mA, 0V | 4.5V @ 25µA | 5.8 nC @ 5 V | ±20V | 100 pF @ 25 V | Depletion Mode | 1.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXTA3N100D2MOSFET N-CH 1000V 3A TO263 |
3138 | 5.80 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3A (Tc) | - | 5.5Ohm @ 1.5A, 0V | - | 37.5 nC @ 5 V | ±20V | 1020 pF @ 25 V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXTA26P20PMOSFET P-CH 200V 26A TO263 |
1540 | 6.74 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Polar | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 26A (Tc) | 10V | 170mOhm @ 13A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 2740 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() |
IXTP76P10TMOSFET P-CH 100V 76A TO220AB |
9338 | 6.90 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 76A (Tc) | 10V | 25mOhm @ 38A, 10V | 4V @ 250µA | 197 nC @ 10 V | ±15V | 13700 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXTA44P15TMOSFET P-CH 150V 44A TO263 |
1050 | 7.10 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 44A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 250µA | 175 nC @ 10 V | ±15V | 13400 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IXTP180N10TMOSFET N-CH 100V 180A TO220AB |
780 | 7.22 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 6.4mOhm @ 25A, 10V | 4.5V @ 250µA | 151 nC @ 10 V | ±30V | 6900 pF @ 25 V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IXTP140P05TMOSFET P-CH 50V 140A TO220AB |
1494 | 7.65 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 140A (Tc) | 10V | 9mOhm @ 70A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±15V | 13500 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXTA96P085TMOSFET P-CH 85V 96A TO263 |
3395 | 7.10 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 85 V | 96A (Tc) | 10V | 13mOhm @ 48A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±15V | 13100 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IXFH60N50P3MOSFET N-CH 500V 60A TO247AD |
4200 | 10.78 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 60A (Tc) | 10V | 100mOhm @ 30A, 10V | 5V @ 4mA | 96 nC @ 10 V | ±30V | 6250 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IXFH50N20MOSFET N-CH 200V 50A TO247AD |
2136 | 11.23 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HiPerFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 50A (Tc) | 10V | 45mOhm @ 25A, 10V | 4V @ 4mA | 220 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IXTH15N50L2MOSFET N-CH 500V 15A TO247 |
813 | 11.66 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 15A (Tc) | 10V | 480mOhm @ 7.5A, 10V | 4.5V @ 250µA | 123 nC @ 10 V | ±20V | 4080 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IXFH340N075T2MOSFET N-CH 75V 340A TO247AD |
306 | 12.31 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 340A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 3mA | 300 nC @ 10 V | ±20V | 19000 pF @ 25 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IXFH50N30Q3MOSFET N-CH 300V 50A TO247AD |
2992 | 13.29 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 50A (Tc) | 10V | 80mOhm @ 25A, 10V | 6.5V @ 4mA | 65 nC @ 10 V | ±20V | 3160 pF @ 25 V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IXFT120N25X3HVMOSFET N-CH 250V 120A TO268HV |
1057 | 14.46 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 120A (Tc) | 10V | 12mOhm @ 60A, 10V | 4.5V @ 4mA | 122 nC @ 10 V | ±20V | 7870 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() |
IXTH30N60L2MOSFET N-CH 600V 30A TO247 |
916 | 19.77 |
ДобавитьНемедленный |
![]() Datenblatt |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 240mOhm @ 15A, 10V | 4.5V @ 250µA | 335 nC @ 10 V | ±20V | 10700 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |