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| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ALD1106SBLMOSFET 4N-CH 10.6V 14SOIC |
200 | 5.80 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD1116SALMOSFET 2N-CH 10.6V 8SOIC |
3801 | 4.11 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD1117SALMOSFET 2P-CH 10.6V 8SOIC |
155 | 4.11 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD111933SALMOSFET 2N-CH 10.6V 8SOIC |
300 | 4.93 |
ДобавитьНемедленный |
Datenblatt |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5.9V | 3.35V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
ALD1116PALMOSFET 2N-CH 10.6V 8DIP |
133 | 4.96 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD1107PBLMOSFET 4P-CH 10.6V 14DIP |
946 | 5.80 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 4 P-Channel, Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1106PBLMOSFET 4N-CH 10.6V 14DIP |
701 | 5.80 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1105PBLMOSFET 2N/2P-CH 10.6V 14DIP |
169 | 5.80 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1103PBLMOSFET 2N/2P-CH 10.6V 14DIP |
2587 | 8.01 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | 40mA, 16mA | 75Ohm @ 5V | 1V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD110900SALMOSFET 2N-CH 10.6V 8SOIC |
822 | 4.84 |
ДобавитьНемедленный |
Datenblatt |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD114913SALMOSFET 2N-CH 10.6V 8SOIC |
249 | 5.16 |
ДобавитьНемедленный |
Datenblatt |
Tube | EPAD® | Active | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD1107SBLMOSFET 4P-CH 10.6V 14SOIC |
114 | 5.80 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 4 P-Channel, Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD1101PALMOSFET 2N-CH 10.6V 8DIP |
179 | 7.23 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD110800ASCLMOSFET 4N-CH 10.6V 16SOIC |
826 | 8.35 |
ДобавитьНемедленный |
Datenblatt |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD114835SCLMOSFET 4N-CH 10.6V 16SOIC |
498 | 6.68 |
ДобавитьНемедленный |
Datenblatt |
Tube | EPAD® | Active | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
|
|
ALD1115PALMOSFET N/P-CH 10.6V 8DIP |
2006 | 4.96 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | N and P-Channel Complementary | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD110900APALMOSFET 2N-CH 10.6V 8DIP |
3253 | 7.12 |
ДобавитьНемедленный |
Datenblatt |
Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
ALD110800APCLMOSFET 4N-CH 10.6V 16DIP |
2345 | 8.35 |
ДобавитьНемедленный |
Datenblatt |
Tube | EPAD®, Zero Threshold™ | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1117PALMOSFET 2P-CH 10.6V 8DIP |
3638 | 4.96 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 1800Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole |
|
|
ALD1105SBLMOSFET 2N/2P-CH 10.6V 14SOIC |
3195 | 5.80 |
ДобавитьНемедленный |
Datenblatt |
Tube | - | Active | 2 N and 2 P-Channel Matched Pair | Standard | 10.6V | - | 500Ohm @ 5V | 1V @ 1µA | - | 3pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount |
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