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| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | DCCurrentGain(hFE)(Min)@IcVce | Power-Max | Frequency-Transition | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NTE2018IC-8 CHAN CMOS/TTL DR 18-PIN DIP |
3842 | 3.81 |
ДобавитьНемедленный |
Datenblatt |
Bag | - | Active | 8 NPN Darlington | 600mA | 50V | 1.6V @ 350mA, 500A | - | - | 1W | - | -20°C ~ 85°C (TA) | Through Hole |
|
NTE912IC-3 ISOLATED TRANS. 14-LEAD |
2020 | 6.59 |
ДобавитьНемедленный |
Datenblatt |
Bag | - | Active | 5 NPN | 50mA | 24V | 230mV @ 1mA, 10mA | 500nA | 40 @ 1mA, 3V | 750mW | 550MHz | -55°C ~ 125°C (TA) | Through Hole |
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