Diodes-Rectifiers-Single - Element(Гонконг) Technology Co., Ltd.

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Производитель. Часть #	Акции	Цены	А	Таблицы данных	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Package / Case	Capacitance @ Vr, F	Supplier Device Package	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)
NXPSC206506Q DIODE SCHOTTKY 650V 20A TO220AC WeEn Semiconductors	4558	8.06	- + Добавить Немедленный	Datenblatt	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	600pF @ 1V, 1MHz	0 ns	500 µA @ 650 V	650 V	20A	175°C (Max)	1.7 V @ 20 A
MUR560J DIODE GEN PURP 600V 5A SMC WeEn Semiconductors	10810	0.48	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	64 ns	3 µA @ 600 V	600 V	5A	175°C (Max)	1.35 V @ 5 A
MUR860J ULTRAFAST POWER DIODE WeEn Semiconductors	9690	0.56	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	90 ns	10 µA @ 600 V	600 V	8A	175°C (Max)	1.25 V @ 8 A
BYC20X-600,127 DIODE GEN PURP 500V 20A TO220FP WeEn Semiconductors	3803	1.85	- + Добавить Немедленный	Datenblatt	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	55 ns	200 µA @ 600 V	500 V	20A	150°C (Max)	2.9 V @ 20 A
BYV29-500,127 DIODE GEN PURP 500V 9A TO220AC WeEn Semiconductors	4999	1.00	- + Добавить Немедленный	Datenblatt	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 500 V	500 V	9A	150°C (Max)	1.25 V @ 8 A
BYV29X-600,127 DIODE GEN PURP 600V 9A TO220FP WeEn Semiconductors	1030	1.04	- + Добавить Немедленный	Datenblatt	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 600 V	600 V	9A	150°C (Max)	1.26 V @ 8 A
NXPSC046506Q DIODE SCHOTTKY 650V 4A TO220AC WeEn Semiconductors	20200	2.86	- + Добавить Немедленный	Datenblatt	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	130pF @ 1V, 1MHz	0 ns	170 µA @ 650 V	650 V	4A	175°C (Max)	1.7 V @ 4 A
BYV25FD-600,118 DIODE GEN PURP 600V 5A DPAK WeEn Semiconductors	7500	0.91	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	50 µA @ 600 V	600 V	5A	150°C (Max)	1.9 V @ 5 A
BYV25D-600,118 DIODE GEN PURP 600V 5A DPAK WeEn Semiconductors	7495	1.00	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	60 ns	50 µA @ 600 V	600 V	5A	150°C (Max)	1.3 V @ 5 A
BYT79X-600,127 DIODE GEN PURP 600V 15A TO220F WeEn Semiconductors	4451	1.42	- + Добавить Немедленный	Datenblatt	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 600 V	600 V	15A	150°C (Max)	1.38 V @ 15 A
WNSC2D04650DJ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	6500	1.38	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	125pF @ 1V, 1MHz	0 ns	20 µA @ 650 V	650 V	4A	175°C	1.7 V @ 4 A
WNSC2D04650TJ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3000	1.60	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	125pF @ 1V, 1MHz	0 ns	20 µA @ 650 V	650 V	4A	175°C	1.7 V @ 4 A
BYC8-600,127 DIODE GEN PURP 600V 8A TO220AC WeEn Semiconductors	4986	1.00	- + Добавить Немедленный	Datenblatt	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	52 ns	150 µA @ 600 V	600 V	8A	150°C (Max)	2.9 V @ 8 A
NXPSC04650B6J DIODE SCHOTTKY 650V 4A D2PAK WeEn Semiconductors	3180	2.93	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	130pF @ 1V, 1MHz	0 ns	170 µA @ 650 V	650 V	4A	175°C (Max)	1.7 V @ 4 A
MURS160BJ ULTRAFAST POWER DIODE WeEn Semiconductors	7616	0.37	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	5 µA @ 600 V	600 V	1A	175°C (Max)	1.25 V @ 1 A
BYC20DX-600PQ DIODE GEN PURP 600V 20A TO220F WeEn Semiconductors	4992	1.86	- + Добавить Немедленный	Datenblatt	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	20 ns	10 µA @ 600 V	600 V	20A	175°C (Max)	2.9 V @ 20 A
NXPSC06650D6J DIODE SCHOTTKY 650V 6A DPAK WeEn Semiconductors	7474	3.78	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A
WNSC12650T6J SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3000	3.78	- + Добавить Немедленный	Datenblatt	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	328pF @ 1V, 1MHz	0 ns	60 µA @ 650 V	650 V	12A	175°C	1.8 V @ 12 A
WNSC6D04650Q SILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors	3000	1.95	- + Добавить Немедленный		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	233pF @ 1V, 1MHz	0 ns	30 µA @ 650 V	650 V	4A	175°C	1.4 V @ 4 A
WNSC2D06650XQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3000	1.98	- + Добавить Немедленный	Datenblatt	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	198pF @ 1V, 1MHz	0 ns	30 µA @ 650 V	650 V	6A	175°C	1.7 V @ 6 A