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| Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Package / Case | Capacitance @ Vr, F | Supplier Device Package | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP3D005A170BSIC SCHOTTKY DIODE 1700V TO247-2 |
1265 | 6.03 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 347pF @ 1V, 1MHz | 0 ns | 20 µA @ 1700 V | 1700 V | 5A | -55°C ~ 175°C | 1.65 V @ 5 A | ||
|
GP3D012A065ASIC SCHOTTKY DIODE 650V TO220 |
507 | 4.08 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 572pF @ 1V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 12A | -55°C ~ 175°C | 1.5 V @ 12 A | ||
|
|
GP3D012A065BSIC SCHOTTKY DIODE 650V TO247-2 |
119 | 4.52 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 572pF @ 1V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 12A | -55°C ~ 175°C | 1.5 V @ 12 A | ||
|
|
GP3D015A120ASIC SCHOTTKY DIODE 1200V TO220 |
119 | 8.51 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 962pF @ 1V, 1MHz | 0 ns | 30 µA @ 1200 V | 1200 V | 15A | -55°C ~ 175°C | 1.6 V @ 15 A | ||
|
|
GP3D015A120BSIC SCHOTTKY DIODE 1200V TO247-2 |
136 | 9.16 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 962pF @ 1V, 1MHz | 0 ns | 30 µA @ 1200 V | 1200 V | 15A | -55°C ~ 175°C | 1.6 V @ 15 A | ||
|
|
GP3D010A120ASIC SCHOTTKY DIODE 1200V TO220 |
712 | 6.41 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 608pF @ 1V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.65 V @ 10 A | ||
|
|
GP3D030A065BSIC SCHOTTKY DIODE 650V TO247-2 |
223 | 9.03 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1247pF @ 1V, 1MHz | 0 ns | 75 µA @ 650 V | 650 V | 30A | -55°C ~ 175°C | 1.65 V @ 30 A | ||
|
|
GP3D020A065ASIC SCHOTTKY DIODE 650V TO220 |
497 | 6.70 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1247pF @ 1V, 1MHz | - | 75 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.65 V @ 30 A | ||
|
|
GP3D010A065ASIC SCHOTTKY DIODE 650V TO220 |
990 | 3.21 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 419pF @ 1V, 1MHz | 0 ns | 25 µA @ 650 V | 650 V | 10A | -55°C ~ 175°C | 1.6 V @ 10 A | ||
|
GP3D010A065DSIC SCHOTTKY DIODE 650V TO263-2L |
500 | 3.44 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | - | - | Active | - | - | - | - | 650 V | 10A | - | - | |||
|
|
GP3D010A065BSIC SCHOTTKY DIODE 650V TO247-2 |
277 | 3.50 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 419pF @ 1V, 1MHz | 0 ns | 25 µA @ 650 V | 650 V | 10A (DC) | -55°C ~ 175°C | 1.6 V @ 10 A | ||
|
|
GP3D010A120BSIC SCHOTTKY DIODE 1200V TO247-2 |
1192 | 6.70 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 608pF @ 1V, 1MHz | 0 ns | 20 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.65 V @ 10 A | ||
|
|
GP3D020A065BSIC SCHOTTKY DIODE 650V TO247-2 |
350 | 6.70 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 835pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 20A | -55°C ~ 175°C | 1.7 V @ 20 A | ||
|
GP3D006A065ADIODE SILICON CARBIDE |
476 | 1.98 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 229pF @ 1V, 1MHz | - | 15 µA @ 650 V | 650 V | 20A (DC) | -55°C ~ 175°C | 1.55 V @ 6 A | ||
|
|
GP3D010A170BSIC SCHOTTKY DIODE 1700V TO247-2 |
2557 | 9.08 |
ДобавитьНемедленный |
Datenblatt |
Tube | RoHS | - | - | Active | - | - | - | - | 1700 V | 10A | - | - | |||
|
|
GP3D008A065DSIC SCHOTTKY DIODE 650V TO263-2L |
800 | 1.92 |
ДобавитьНемедленный |
Datenblatt |
Tape & Reel (TR),Cut Tape (CT) | RoHS | - | - | Active | - | - | - | - | 650 V | 8A | - | - | |||
|
|
GP3D020A120BSIC SCHOTTKY DIODE 1200V TO247-2 |
1156 | 11.78 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1179pF @ 1V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 20A | -55°C ~ 175°C | 1.65 V @ 20 A | ||
|
|
GP3D030A120BSIC SCHOTTKY DIODE 1200V TO247-2 |
155 | 16.17 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1762pF @ 1V, 1MHz | 0 ns | 60 µA @ 1200 V | 1200 V | 30A | -55°C ~ 175°C | 1.7 V @ 30 A | ||
|
|
GP3D008A065ASIC SCHOTTKY DIODE 650V TO220 |
868 | 2.60 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 336pF @ 1V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 8A | -55°C ~ 175°C | 1.6 V @ 8 A | ||
|
GP3D040A065USIC SCHOTTKY DIODE 650V TO247-3 |
2108 | 8.80 |
ДобавитьНемедленный |
Datenblatt |
Tube | Amp+™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 835pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 40A | -55°C ~ 175°C | 1.7 V @ 20 A |
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