Фотографии | Производитель. Часть # | Акции | Цены | А | Таблицы данных | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
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G3S06504BSIC SCHOTTKY DIODE 650V 4A 3-PIN |
2822 | 3.20 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 9A (DC) | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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G3S06506BSIC SCHOTTKY DIODE 650V 6A 3-PIN |
3072 | 5.22 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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G3S06508BSIC SCHOTTKY DIODE 650V 8A 3-PIN |
3870 | 5.36 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 14A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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G3S06512BSIC SCHOTTKY DIODE 650V 12A 3-PI |
2132 | 6.93 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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G3S12004BSIC SCHOTTKY DIODE 1200V 4A 3-PI |
3052 | 6.98 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 8.5A (DC) | 1.7 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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G3S06510BSIC SCHOTTKY DIODE 650V 10A 3-PI |
2864 | 7.46 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 27A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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G4S06516BTSIC SCHOTTKY DIODE 650V 16A 3-PI |
3219 | 7.97 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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G3S12006BSIC SCHOTTKY DIODE 1200V 6A 3-PI |
2610 | 10.14 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 14A (DC) | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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G3S06516BSIC SCHOTTKY DIODE 650V 16A 3-PI |
3394 | 10.21 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 25.5A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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G4S06520BTSIC SCHOTTKY DIODE 650V 20A 3-PI |
3140 | 12.58 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 31.2A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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G5S12016BSIC SCHOTTKY DIODE 1200V 16A 3-P |
2171 | 14.47 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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G5S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P |
2302 | 14.47 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.35A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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G5S12016BMSIC SCHOTTKY DIODE 1200V 16A 3-P |
2995 | 14.83 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 27.9A (DC) | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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G3S12010BMSIC SCHOTTKY DIODE 1200V 10A 3-P |
2069 | 15.37 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 19.8A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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G3S12010BSIC SCHOTTKY DIODE 1200V 10A 3-P |
3360 | 16.67 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 39A (DC) | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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G4S06530BTSIC SCHOTTKY DIODE 650V 30A 3-PI |
2591 | 16.81 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 650 V | 39A (DC) | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | Through Hole |
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G5S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P |
2878 | 22.59 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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G3S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P |
2614 | 22.96 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 37A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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G5S12020BSIC SCHOTTKY DIODE 1200V 20A 3-P |
2438 | 24.72 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33A (DC) | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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G4S12020BMSIC SCHOTTKY DIODE 1200V 20A 3-P |
2347 | 31.70 |
ДобавитьНемедленный |
![]() Datenblatt |
Cut Tape (CT),Tape & Box (TB) | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 33.2A (DC) | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | Through Hole |