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Фотографии Производитель. Часть # Акции Цены А Таблицы данных Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFD3055LESM

RFD3055LESM

MOSFET N-CH 60V 11A TO252AA

Fairchild Semiconductor

3239 0.00
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RFD3055LESM

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Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 5V 107mOhm @ 8A, 5V 3V @ 250µA 11.3 nC @ 10 V ±16V 350 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJD4NA70_L2_00001

PJD4NA70_L2_00001

700V N-CHANNEL MOSFET

Panjit International Inc.

2918 0.99
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Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Ta) 10V 2.8Ohm @ 2A, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 514 pF @ 25 V - 77W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CPH3413-TL-E

CPH3413-TL-E

N-CHANNEL SILICON MOSFET

onsemi

2871 0.24
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Bulk * Active - - - - - - - - - - - - - -
SI3454DV

SI3454DV

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

3601 0.00
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SI3454DV

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 4.2A (Ta) 4.5V, 10V 65mOhm @ 4.2A, 10V 2V @ 250µA 15 nC @ 10 V ±20V 460 pF @ 15 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPI22N03S4L-15

IPI22N03S4L-15

N-CHANNEL POWER MOSFET

Infineon Technologies

3393 0.00
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IPI22N03S4L-15

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Bulk * Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 4.5V, 10V 14.9mOhm @ 22A, 10V 2.2V @ 10µA 14 nC @ 10 V ±16V 980 pF @ 25 V - 31W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR4105ZPBF

IRFR4105ZPBF

MOSFET N-CH 55V 30A DPAK

International Rectifier

2162 0.00
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IRFR4105ZPBF

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) - 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7401PBF

IRF7401PBF

HEXFET POWER MOSFET

International Rectifier

2630 0.00
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IRF7401PBF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 8.7A (Ta) 2.7V, 4.5V 22mOhm @ 4.1A, 4.5V 700mV @ 250µA (Min) 48 nC @ 4.5 V ±12V 1600 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLL024NPBF-INF

IRLL024NPBF-INF

HEXFET POWER MOSFET

Infineon Technologies

2664 0.00
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IRLL024NPBF-INF

Datenblatt

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 3.1A (Ta) - 65mOhm @ 3.1A, 10V 2V @ 250µA 15.6 nC @ 5 V ±16V 510 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHL620S-GE3

SIHL620S-GE3

LOGIC MOSFET N-CHANNEL 200V

Vishay Siliconix

3431 0.94
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SIHL620S-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 4V, 10V 800mOhm @ 3.1A, 10V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMA410NZ

FDMA410NZ

MOSFET N-CH 20V 9.5A 6MICROFET

onsemi

3164 1.01
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FDMA410NZ

Datenblatt

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 9.5A (Ta) 1.5V, 4.5V 23mOhm @ 9.5A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±8V 1080 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQS164ELNW-T1_GE3

SQS164ELNW-T1_GE3

AUTOMOTIVE N-CHANNEL 60 V (D-S)

Vishay Siliconix

3524 0.95
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SQS164ELNW-T1_GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 82A (Tc) 4.5V, 10V 7.4mOhm @ 10A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2159 pF @ 25 V - 104W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
SQS482EN-T1_BE3

SQS482EN-T1_BE3

N-CHANNEL 30-V (D-S) 175C MOSFET

Vishay Siliconix

2129 0.96
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SQS482EN-T1_BE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 8.5mOhm @ 16.4A, 10V 2.5V @ 250µA 39 nC @ 10 V ±20V 1865 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIA413ADJ-T1-GE3

SIA413ADJ-T1-GE3

MOSFET P-CH 12V 12A PPAK SC70-6

Vishay Siliconix

2074 0.97
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Немедленный

SIA413ADJ-T1-GE3

Datenblatt

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 12A (Tc) 1.5V, 4.5V 29mOhm @ 6.7A, 4.5V 1V @ 250µA 57 nC @ 8 V ±8V 1800 pF @ 10 V - 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD24N08TF

FQD24N08TF

MOSFET N-CH 80V 19.6A DPAK

Fairchild Semiconductor

3981 0.00
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FQD24N08TF

Datenblatt

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 19.6A (Tc) 10V 60mOhm @ 9.8A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 750 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM78N100LD

RM78N100LD

MOSFET N-CH 100V 78A TO252-2

Rectron USA

3684 0.44
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 78A (Tc) 4.5V, 10V 8.5mOhm @ 39A, 10V 2.2V @ 250µA - ±20V 5480 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM110N82T2

RM110N82T2

MOSFET N-CH 82V 110A TO220-3

Rectron USA

2477 0.44
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Немедленный

Tube - Active N-Channel MOSFET (Metal Oxide) 82 V 110A (Tc) 10V 7mOhm @ 20A, 10V 4V @ 250µA - ±20V 6400 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM24N200TI

RM24N200TI

MOSFET N-CHANNEL 220V 24A TO220F

Rectron USA

3334 0.44
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 220 V 24A (Ta) 10V 80mOhm @ 15A, 10V 2.5V @ 250µA - ±20V 4200 pF @ 25 V - 45W (Ta) -55°C ~ 175°C (TJ) Through Hole
HUF76129S3ST

HUF76129S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3239 0.00
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HUF76129S3ST

Datenblatt

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 16Ohm @ 56A, 10V 3V @ 250µA 45 nC @ 10 V ±20V 1350 pF @ 25 V - 105W (Tc) -40°C ~ 150°C (TJ) Surface Mount
X97813760

X97813760

SMALL SIGNAL MOSFET

Infineon Technologies

2192 0.00
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Немедленный

X97813760

Datenblatt

Bulk * Active - - - - - - - - - - - - - -
PJD60N04_L2_00001

PJD60N04_L2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3244 1.04
- +

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Немедленный

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 12.7A (Ta), 60A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V 2.5V @ 250µA 17 nC @ 4.5 V ±20V 1759 pF @ 25 V - 2W (Ta), 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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